Silicon schottky junction taking Bi2Se3 film as contact layer and preparation method

A Schottky junction and contact layer technology, used in electrical components, circuits, semiconductor devices, etc., can solve the problem that the quality of the heterojunction interface cannot be guaranteed, the characteristics of the silicon Schottky junction are deteriorated, and it is not suitable for large-scale production. and other problems, to achieve excellent optical and electrical properties, reduce Si surface state density, and achieve ideal properties.

Active Publication Date: 2013-11-13
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention provides a 2 Se 3 The thin film is the silicon Schottky junction of the contact layer and its preparation method, which solves the problem of Bi 2 Se 3 The thin film may cause the deterioration of the characteristics of t

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  • Silicon schottky junction taking Bi2Se3 film as contact layer and preparation method
  • Silicon schottky junction taking Bi2Se3 film as contact layer and preparation method
  • Silicon schottky junction taking Bi2Se3 film as contact layer and preparation method

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Example Embodiment

[0029] Example 1:

[0030] Such as figure 1 As shown, this embodiment includes an n-type Si substrate 2. The resistivity of the Si substrate 2 is 0.001Ω·cm, and the upper part of the Si substrate 2 is provided with Bi 2 Se 3 Schottky contact layer 1, Bi 2 Se 3 The thickness of the Schottky contact layer 1 is 5nm, the bottom of the Si substrate 2 is provided with an ohmic contact back electrode 3, Bi 2 Se 3 The Schottky contact layer 1 is provided with an ohmic contact electrode 4 made of Al and a thickness of 20nm, Bi 2 Se 3 An adhesive layer is provided between the Schottky contact layer 1 and the ohmic contact electrode 4, and the adhesive layer is made of Cr.

[0031] Preferably, the Si substrate 2 of this embodiment is a (111)-oriented single crystal.

[0032] One with Bi 2 Se 3 The method for preparing a silicon Schottky junction with a thin film as a contact layer includes the following steps:

[0033] (A) After cleaning the Si substrate with the crystal orientation of (111) by t...

Example Embodiment

[0039] Example 2:

[0040] Such as figure 1 As shown, this embodiment includes a p-type Si substrate 2. The resistivity of the Si substrate 2 is 10Ω·cm, and the upper part of the Si substrate 2 is provided with Bi with a thickness of 27.5 nm. 2 Se 3 Schottky contact layer 1, the bottom of Si substrate 2 is provided with ohmic contact back electrode 3, Bi 2 Se 3 The Schottky contact layer 1 is provided with an ohmic contact electrode 4 made of Ag and a thickness of 110nm, Bi 2 Se 3 An adhesive layer is provided between the Schottky contact layer 1 and the ohmic contact electrode 4, and the adhesive layer is made of Ti.

[0041] Preferably, the Si substrate 2 of this embodiment is a (111)-oriented single crystal.

[0042] One with Bi 2 Se 3 The method for preparing a silicon Schottky junction with a thin film as a contact layer includes the following steps:

[0043] (A) After cleaning the Si substrate with the crystal orientation of (111) by the RCA chemical cleaning method, it is treate...

Example Embodiment

[0049] Example 3:

[0050] Such as figure 1 As shown, this embodiment includes a type of high-resistance n-Si substrate 2 close to intrinsic conductivity. The resistivity of the Si substrate 2 is 5000 Ω·cm, and the upper part of the Si substrate 2 is provided with a Bi with a thickness of 50 nm. 2 Se 3 Schottky contact layer 1, the bottom of Si substrate 2 is provided with ohmic contact back electrode 3, Bi 2 Se 3 The Schottky contact layer 1 is provided with an ohmic contact electrode 4 made of Au and a thickness of 200nm, Bi 2 Se 3 An adhesive layer is provided between the Schottky contact layer 1 and the ohmic contact electrode 4, and the adhesive layer is made of Cr.

[0051] Preferably, the Si substrate 2 of this embodiment is a (111)-oriented single crystal.

[0052] One with Bi 2 Se 3 The method for preparing a silicon Schottky junction with a thin film as a contact layer includes the following steps:

[0053] (A) After cleaning the Si substrate with the crystal orientation of (...

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Abstract

The invention discloses a silicon schottky junction taking a Bi2Se3 film as a contact layer and a preparation method. The silicon schottky junction comprises an Si substrate, wherein a Bi2Se3 schottky contact layer is arranged at the upper part of the Si substrate; an ohmic contact back electrode is arranged at the bottom of the Si substrate; an ohmic contact electrode is arranged on the Bi2Se3 schottky contact layer; and a bonding layer is arranged between the Bi2Se3 schottky contact layer and the ohmic contact electrode, and is made of Cr or Ti. With the adoption of the structure, the stable schottky junction can be formed between Bi2Se3 and n-type Si; in addition, the bonding layer can allow a Bi2Se3 single crystal sheet and an Si sheet to be pasted together effectively; the schottky junction is suitable for scale production; and the quality of a heterojunction interface can be ensured.

Description

technical field [0001] The invention relates to topological insulator bismuth selenide (Bi 2 Se 3 ) and silicon (Si) material-level integration of spin or photovoltaic device applications, especially a method of preparing single crystal structure Bi on the surface of Si(111)-1×1 after passivation of hydrogen atoms by physical vapor deposition technology 2 Se 3 Method of topological insulator thin film contact layer to form Schottky junction. Background technique [0002] Silicon is known to be the most commercially valuable microelectronic and photovoltaic material. Si-based Schottky diodes are majority-carrier devices with small junction capacitance and fast working speed, and are widely used in high-speed integrated circuits and photovoltaic fields. However, the current conventional metal (metal silicide) / Si Schottky junction devices have been developed very maturely, so finding electrode materials with superior and novel physical properties to expand the application r...

Claims

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Application Information

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IPC IPC(8): H01L29/47H01L21/28H01L31/0224
Inventor 李含冬高磊李辉王高云罗思源任武洋艾远飞巫江周志华王志明
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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