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InAs/AlSb high electron mobility transistor (HEMT) epitaxial structure and fabrication method thereof

An epitaxial structure, alasxsb1-x technology, applied in the field of microelectronics, can solve the problems of oxidation device performance, lattice mismatch high activity AlSb, drop, etc., to prevent AlSb layer oxidation, improve stability and reliability, and reduce costs Effect

Active Publication Date: 2017-09-01
XIDIAN UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide an InAs / AlSb HEMT epitaxial structure and its preparation method, which mainly solves the problem of device performance degradation caused by lattice mismatch and highly active AlSb oxidation in the prior art HEMT epitaxial structure

Method used

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  • InAs/AlSb high electron mobility transistor (HEMT) epitaxial structure and fabrication method thereof
  • InAs/AlSb high electron mobility transistor (HEMT) epitaxial structure and fabrication method thereof

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preparation example Construction

[0044] The embodiment of the present invention also provides a method for preparing an InAs / AlSb HEMT epitaxial structure, which specifically includes the following steps:

[0045] 1) A buffer layer 2 is grown on the substrate 1 by a plasma-enhanced chemical vapor deposition method, and the buffer layer 2 is a Si film with a thickness of 30-100 nm;

[0046] 2) Using MBE equipment, deoxidize the substrate with buffer layer 2 at 710°C and degas at 650°C for 3 minutes. When the temperature reaches 560°C, turn on the sources of Al, As and Sb, and adopt a stepwise variable composition growth method at Growth of AlAs on Si x Sb 1-x The lower barrier layer 3, in which the composition ratio of Al, As, and Sb is 1:X:1-X, and the value of X takes 6 values ​​that decrease successively from 1 to 0, grows 6 layers from bottom to top, and each Layer thickness is 30-200nm;

[0047] 3) Using MBE equipment, in AlAs x Sb 1-x InAs channel layer 4 is grown on the lower barrier layer 3: when ...

Embodiment 1

[0057] The equipment used in the embodiment of the present invention includes: microelectronic process equipment such as molecular beam epitaxy MBE and plasma enhanced chemical vapor deposition PECVD.

[0058] refer to figure 2 , an InAs / AlSb HEMT epitaxial structure provided by an embodiment of the present invention is formed according to the following structure, which specifically includes from bottom to top: a substrate 1, a buffer layer 2, an AlAsxSb1-x lower barrier layer 3, and an InAs trench Channel layer 4, AlSb spacer layer 5, InAs doped layer 6, AlAs x Sb 1-x An upper potential barrier layer 7, an InAlAs hole blocking layer 8 and an InAs cap layer 9.

[0059] Specifically, in this embodiment, as figure 2 As shown, the outer surface of the flexible material is wrapped with a thickness of 100nm SiO 2 , forming the substrate 1, the so-called flexible substrate; the SiO used for the substrate 1 wrapping 2 A thickness of 30nmSi is grown on it to form a buffer layer...

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Abstract

The invention discloses an InAs / AlSb high electron mobility transistor (HEMT) epitaxial structure and a fabrication method thereof. The InAs / AlSb HEMT epitaxial structure disclosed by the invention comprises a substrate, a buffer layer, a AlAs<x>Sb<1-x> lower barrier layer, an InAs channel layer, a AlSb isolation layer, an InAs doping layer, a AlAs<x>Sb<1-x> upper barrier layer, an InAlAs hole barrier layer and an InAs cap layer from bottom to top, wherein the buffer layer employs Si, the AlAs<x>Sb<1-x> lower barrier layer is a AlAs<x>Sb<1-x> barrier layer with a stepped variable constituent mode, and the AlAs<x>Sb<1-x> upper barrier layer is a AlAs<x>Sb<1-x> barrier layer with a stepped variable constituent mode. The AlAs<x>Sb<1-x> lower barrier layer and the AlAs<x>Sb<1-x> upper barrier layer are grown by employing a stepped variable constituent method, and the stability and the reliability of a device are effectively improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to an InAs / AlSb HEMT epitaxial structure and a preparation method thereof, which can be used in the preparation of high-speed and low-power InAs / AlSb HEMT devices. Background technique [0002] Compared with traditional semiconductor devices GaAs and GaN HEMTs, InAs / AlSb HEMTs, as a typical antimony-based compound semiconductor (ABCS) device, has higher electron mobility and electron saturation drift velocity, and its high speed, low power consumption, low noise, etc. It has a good development prospect in application. [0003] At present, there are mainly the following problems in the growth and manufacturing process of InAs / AlSb HEMT device materials: First, in the growth of epitaxial materials, when two materials with different lattice constants are grown together, defects and dislocations will be caused due to lattice mismatch. . For example, the lattice mismatch of Si an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/205H01L29/778H01L21/335H01L21/02
CPCH01L21/02422H01L21/02488H01L21/02505H01L21/0251H01L21/02546H01L21/02631H01L29/0684H01L29/205H01L29/66462H01L29/7783
Inventor 吕红亮张静张玉明张义门张宁
Owner XIDIAN UNIV
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