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Thin film transistor, array substrate and display device

A technology of thin film transistors and array substrates, which is applied in the field of touch control and can solve problems such as high leakage current density

Inactive Publication Date: 2017-06-13
XIAMEN TIANMA MICRO ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of this, an embodiment of the present invention provides a thin film transistor, an array substrate, and a display device to solve the problem of high leakage current density of a thin film transistor in an off state in the prior art

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  • Thin film transistor, array substrate and display device
  • Thin film transistor, array substrate and display device
  • Thin film transistor, array substrate and display device

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Embodiment Construction

[0034] In order to better understand the technical solutions of the present invention, the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0035] It should be clear that the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0036] Terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. As used in the embodiments of the present invention and the appended claims, the singular forms "a", "said" and "the" are also intended to include the plural forms unless the context clearly indicates otherwise.

[0037] It should be understood that although the...

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Abstract

The embodiment of the invention provides a thin film transistor, an array substrate and a display device. On one hand, a grid of the thin film transistor comprises a first subregion, a main region and a second subregion which are integrated, wherein the first subregion and the second subregion are arranged at the two opposite sides of the main region in mirror symmetry, the first subregion and the second subregion are wider than the main region, namely a grid is in a shape that the two ends are wide and the middle part is narrow overall, so that a first sub-conducting channel and a second sub-conducting channel which correspond to the first subregion and the second subregion are longer than a main conducting channel corresponding to the main region; and further on-resistance of a subchannel region is increased. Therefore, the technical scheme provided by the embodiment of the invention can reduce leakage current density of the subchannel region when a TFT is in a closed state, and further overall leakage current density of the TFT in the closed state is reduced.

Description

[0001] 【Technical field】 [0002] The present invention relates to the field of touch technology, in particular to a thin film transistor, an array substrate and a display device. [0003] 【Background technique】 [0004] In the LTPS (Low Temperature Poly-silicon, low-temperature polysilicon) process, after plasma etching, photoresist removal liquid corrosion and other processes, the defect state density at the interface of the channel region is high, resulting in TFT (Thin Film Transistor, thin film Transistors) have a high leakage current density in the off state. At present, in the LTPS TFT-LCD (ThinFilm Transistor-Liquid Crystal Display, thin film transistor liquid crystal display) process, the LDD (Light Doped Drain, lightly doped drain) method is usually used to form the LDD region to suppress the abnormally increased leakage current. This method requires ion doping, which is likely to cause ion pollution and lattice distortion. In addition, the reduction of ion doping in...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L29/423H01L27/12H01L27/32G02F1/1362
CPCH01L27/1214H01L29/4232H01L29/42384H01L29/786G02F1/1362H10K59/12
Inventor 文亮
Owner XIAMEN TIANMA MICRO ELECTRONICS
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