Method for preparing ZnO ceramic film low-voltage piezoresistor

Abstract

Disclosed is a manufacture method of ZnO ceramics film low voltage dependent resistor, comprising bismuth ion Bi 3+,antimony ion Sb3+, manganese ion Mn2+, chrome ion Cr3+ and cobalt ion Co3+ distributing in ZnO sol , and their mol ratio is: Zn2+ Bi3+ Sb3+ Mn2+ Cr3+ Co3+ =100: (0.6~1.4) : (1.6~3.0) : (0.2~1.0) : (0.5~3.0) : (1.0~3.0). The temperature of sol of 60~80% is raised to 550deg.C~650deg.C after baking to decompose organic matter, then ZnO crystal formed is milled to be ZnO nanometer powder whose diameter is 30nm~70nm, add dispersion agent into the ZnO powder and then they are added into the remain sol after mixing, at last ZnO ceramics film low voltage voltage dependent resistor is made on monocrystalline sillicon substrate. The production made by the invention has excellent electric performance, voltage dependent voltage lower than 4V, nonlinear coefficient of 22 and density of leakage current smaller than 0.4uA / nm2.

Description

technical field

[0001] The invention relates to a preparation method of a ZnO ceramic film varistor. Background technique

[0002] At present, in the preparation of ZnO ceramic thin-film varistors, the film thickness used is generally tens to hundreds of nm. Because the film thickness is too small, the pressure-sensitive performance and stability are relatively poor, making it difficult for varistors to achieve Practical application requirements. In order to optimize its performance, it is necessary to increase the film thickness, and the increase of film thickness is prone to cracks, which will reduce the performance of the film. Contents of the invention

[0003] The purpose of the present invention is to overcome the shortcomings of the above-mentioned prior art and provide a method for preparing a ZnO ceramic film low-voltage varistor. In this method, by doping bismuth ions Bi 3+ , antimony ion Sb 3+ , manganese ions Mn 2+ , chromium ion Cr 3+ , cobalt ion Co 3+...

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