Low-leakage-current semiconductor film heterojunction and preparation method thereof

A leakage current and semiconductor technology, applied in the field of new semiconductor composite materials, can solve problems that hinder the application of ferroelectric-ferromagnetic composite materials

Inactive Publication Date: 2013-02-06
GUANGDONG UNIV OF TECH
View PDF1 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the magnetoelectric coupling coefficient of ferroelectric-ferromagnetic composite materials has reached hundreds of mW/cm

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-leakage-current semiconductor film heterojunction and preparation method thereof
  • Low-leakage-current semiconductor film heterojunction and preparation method thereof
  • Low-leakage-current semiconductor film heterojunction and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Barium-rich barium strontium titanate (Ba 1-x Sr x )TiO 3 (BST, x =0.35) target, Nd-doped Nd-bismuth ferrite (Bi 0.875 Nd 0.125 )FeO 3 For the target, the two targets were annealed at 1350°C and 850°C respectively. On the substrate Pt / Ti / SiO by radio frequency magnetron sputtering 2 / Si deposition (Ba 0.65 Sr 0.35 ) TiO 3 Thin film, the film thickness is less than 200 nm, deposition environment: the substrate temperature is maintained at about 550oС, the atmosphere maintains the oxygen / argon molar ratio of 4:1, the vacuum degree is at 1.5Pa, and then in (Ba 0.65 Sr 0.35 )TiO 3 Neodymium bismuth ferrite (Bi 0.875 Nd 0.125 )FeO 3 (BNF) film, substrate temperature and vacuum conditions are the same as barium strontium titanate (Ba 0.65 Sr 0.35 ) TiO 3 The film preparation conditions are the same. Rapid annealing of the deposited film in a nitrogen atmosphere, the annealing process must consider the lattice matching of the substrate, and select an appropr...

Embodiment 2

[0032] Sr-rich barium strontium titanate (Ba 1-x Sr x )TiO 3 (BST, x =0.75) target, Nd-doped Nd-bismuth ferrite (Bi 0.875 Nd 0.125 )FeO 3 For the target, the two targets were annealed at 1350°C and 850°C respectively. On the substrate Pt / Ti / SiO by radio frequency magnetron sputtering 2 / Si deposition (Ba 0.25 Sr 0.75 )TiO 3 The film, film thickness, deposition environment, substrate temperature and atmosphere are the same as in Example 1. The obtained heterojunction film has a leakage current density of 10 under an electric field of 300 kV / cm -4 A / cm 2 , compared with the doped iron neodymium bismuth (Bi 0.875 Nd 0.125 )FeO 3 The leakage current density of the film is three orders of magnitude lower.

Embodiment 3

[0034] Preparation of barium zirconate titanate Ba(Zr y Ti 1-y )O 3 (BZT, y =0.20) target, Nd-doped Nd-bismuth ferrite (Bi 0.875 Nd 0.125 )FeO 3 For the target, the two targets were annealed at 1350°C and 850°C respectively. On the substrate Pt / Ti / SiO by radio frequency magnetron sputtering 2 Deposition of Ba(Zr on / Si0.20 Ti 0.80 )O 3 The film, film thickness, deposition environment, substrate temperature and atmosphere are the same as in Example 1. The obtained heterojunction film has a leakage current density of 10 under an electric field of 300 kV / cm -7 A / cm 2 , compared to the doped Nd-bismuth ferrite (Bi 0.875 Nd 0.125 )FeO 3 The leakage current density of the film is 5 orders of magnitude lower.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Leakage current densityaaaaaaaaaa
Leakage current densityaaaaaaaaaa
Login to view more

Abstract

The invention discloses a low-leakage-current semiconductor film heterojunction and a preparation method thereof. The low-leakage-current semiconductor film heterojunction is prepared by depositing a weak-ferroelectricity film layer with a perovskite structure on a substrate, and then depositing a multiferroic film on the ferroelectric film layer to form an ABO3 type multiferroic film/ABO3 ferroelectric film/substrate heterojunction film structure, wherein proper atmosphere and a proper annealing process are combined. The leakage current density of the film heterojunction is lower than that of a monolayer ABO3 type multiferroic film by about 3-5 orders of magnitudes.

Description

technical field [0001] The invention relates to a novel semiconductor composite material, more precisely a semiconductor thin film heterojunction with low leakage current and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of electronic technology, the application requirements of ferroelectric materials and ferromagnetic materials are increasing, and many electronic devices made of ferroelectric materials and ferromagnetic materials are widely used in the electronic field, such as ferroelectric memory, Phasers, surface filters, etc., they have many excellent qualities that traditional electronic devices do not have. For example, the fatigue resistance of ferroelectric memory is several orders of magnitude higher than that of traditional floating gate memory, and the bandwidth of multiferroic phaser applications is higher than that of traditional filters. The bandwidth of the filter is several times wider, and the freque...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L43/00H01L43/10H01L43/12C23C14/18C23C14/35C30B23/02C30B29/32
Inventor 刘秋香马才兵唐新桂蒋艳平
Owner GUANGDONG UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap