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Trench barrier MOS Schottky diode device made of high-dielectric-constant gate medium material

A Schottky diode, high dielectric constant technology, applied in electrical components, semiconductor devices, circuits, etc., can solve problems affecting the electrical characteristics of diodes, reduce leakage current density, reduce leakage current, and enhance electric field coupling effect of action

Inactive Publication Date: 2014-09-17
HANGZHOU QIPEI TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as a very critical trench structure in TMBS structure devices, there is no in-depth report on how the trench sidewall material affects the electrical characteristics of the diode.

Method used

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Embodiment Construction

[0023] In order to describe the present invention more specifically, the technical solution of the present invention and its related principles and simulation process will be described in detail below in conjunction with the accompanying drawings and specific embodiments. In the simulation research of this patent, the optimal selection of various device parameters is as follows: the depth of the N-active region is 4um, and the doping concentration is 2×10 16 cm -3 ; The work function of the barrier metal of the Schottky junction at the anode terminal of the device is 5eV; the total depth of the trench is 1.65 μm; the thickness of the oxide layer in the trench is The width of the active region between the trenches is 0.7 μm. In addition, there is a unique parameter in the high dielectric constant gate dielectric TMBS device, that is, the height of the oxide of the high dielectric constant gate dielectric material (eg hafnium oxide, titanium oxide, etc.) on the inner wall of t...

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Abstract

The invention provides a trench barrier MOS Schottky diode device made of a high-dielectric-constant gate medium material. The trench barrier MOS Schottky diode device comprises an N+ semiconductor substrate, an N- epitaxial layer on the N+ semiconductor substrate, a trench structure formed in the N- epitaxial layer, anode metal and cathode metal, wherein the anode metal is located on the N- epitaxial layer, Schottky contact grows in a trench, the cathode metal is located under the N+ semiconductor substrate, and Ohmic contact grows in the cathode metal. An oxidation layer on the side wall of the trench comprises the upper portion and the lower portion, the upper portion is made of the high-dielectric-constant gate medium material, and the lower portion is made of silicon dioxide. The height of the portion, where the high-dielectric-constant gate medium material grows, of the inner wall of the trench is within three fourths of the total height of the trench. According to the trench barrier MOS Schottky diode device made of the high-dielectric-constant gate medium material, the upper portion of the oxidization layer in the trench is made of the high-dielectric-constant gate medium material, the lower portion is made of the silicon dioxide, compared with a traditional SiO2TMBS device, the leakage current density can be reduced by 19.8%, and the breakdown voltage and forward conductive voltage characteristics of the device are not weakened.

Description

technical field [0001] The invention belongs to the field of power rectification devices, specifically a low-power, ultra-high-speed semiconductor rectification device, which is widely used in circuits such as switching power supplies, frequency converters, and drives, and is used as high-frequency, high-current rectifier diodes, freewheeling diodes, Used for protection diodes, or as rectifier diodes and small signal detection diodes in circuits such as microwave communications. Background technique [0002] With the development of society, human beings' demand and consumption of energy are increasing day by day, and reducing energy consumption has become an essential measure for energy conservation and environmental protection. At present, various power rectification devices are widely used in people's life and production. Therefore, power rectification devices play an important role in energy saving and environmental protection. [0003] Schottky diodes are widely used in...

Claims

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Application Information

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IPC IPC(8): H01L29/861H01L29/06
CPCH01L29/8725H01L29/0638
Inventor 蔡银飞翟东媛赵毅施毅郑有炓
Owner HANGZHOU QIPEI TECH
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