Orthogonal crystal system crystal material and preparation method thereof

A technology of crystal material and orthorhombic system, which is applied in the field of orthorhombic crystal material and its preparation, and can solve the problems of increased growth and obstruction of binary manganese germanide.

Active Publication Date: 2022-03-18
SHANGHAI TECH UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The problem that cannot be overcome at present is that the common high-temperature furnace in the laboratory cannot provide a high-pressure (for example, 5GPa, about 50,000 atmospheres) environment for the sample reactants, and only germanium-poor manganese can be prepared by the preparation method at atmos

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  • Orthogonal crystal system crystal material and preparation method thereof
  • Orthogonal crystal system crystal material and preparation method thereof
  • Orthogonal crystal system crystal material and preparation method thereof

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preparation example Construction

[0043] A second aspect of the invention provides a method of preparing a orthogonal crystal crystal material according to the first aspect of the present invention, the method comprising the steps of:

[0044] S1, raw manganese with single germplasm, after the tablet, then wrap the hexagonal boron tank protective cover;

[0045] S2, the inclusion of the inclusions in step S1 at 4 to 6 GPa pressure, 800 to 1000 ° C, prepared a orthogonal alcoholic crystal material.

[0046] In the preparation method of the orthogonal crystal crystal material provided by the present invention, in step S1, the monomer manganese and single germplasm are mixed in a suitable molar ratio under an inert gas protection conditions (argon environments in the specifically available suitcase). And in a mortar in Agate, 30-60 min, mixed a uniform powder into a stainless steel mold (powder tableting machine), pressurized to 5 MPa, press the mixed powder to be 2.5 ~ 4.5mm, height of 2.2 ~ 4.2mm cylindrical shape....

Embodiment 1

[0064] 1) Cylindrical mixture preparing manganese and germanium under normal pressure

[0065] Chemical pure manganese with single germplasm is mixed in a glove box (argon environment) in a glove box (argon environment) in a molar ratio of 1: 4.8. The mixture powder was pressed into a cylindrical sample having a diameter of 3.5 mm and a height of 3.2 mm by a powder tableting machine (pressure: 5 MP). In order to ensure a pure reaction environment, a hexagonal boron nitride (wall thickness: 0.5 mm) and hexagonal boron nitride wafer (thickness: 0.5mm) are used to reduce the chance of generating an inclusion phase.

[0066] 2) The above-mentioned cylindrical sample and hexagonal boron boron protective cover are loaded into the high pressure assembly.

[0067] First, a sample was wrapped by a hexagonized boron, and then wrapped in graphite, the outer layer was wrapped by zirconia and placed in magnesium oxide octahedron, and constituting a complete assembly. The sample is then loaded ...

Embodiment 2

[0082] 1) Cylindrical mixture preparing manganese and germanium under normal pressure

[0083] Chemical pure manganese with single germplasm is mixed in a glove box (argon environment) in a glove box (argon environment) in a molar ratio of 1: 4.8. The mixture powder was pressed into a cylindrical sample having a diameter of 3.5 mm and a height of 3.2 mm by a powder tableting machine (pressure: 5 MP). In order to ensure a pure reaction environment, a hexagonal boron nitride (wall thickness: 0.5 mm) and hexagonal boron nitride wafer (thickness: 0.5mm) are used to reduce the chance of generating an inclusion phase.

[0084] 2) The above-mentioned cylindrical sample and the hexagonal boron boron protective sleeve are loaded into the high pressure group.

[0085] First, a sample was wrapped by a hexagonized boron, and then wrapped in graphite, the outer layer was wrapped by zirconia and placed in magnesium oxide octahedron, and constituting a complete assembly. The sample is then loade...

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Abstract

The invention discloses a MnxGey crystal with an orthogonal structure and a preparation method of the MnxGey crystal, and belongs to the field of preparation and application of magnetic materials, and the cell parameter of the crystal is that the space group of the crystal is Cmmm. According to the preparation method, elemental metal elements manganese and germanium are used as raw materials, the orthorhombic-phase MnxGey single crystal is finally prepared through the technological processes of raw material mixing, briquetting, assembling, high-temperature and high-pressure synthesis and cooling pressure relief, x is 1-2, y is 8-9, the preparation method is simple, the preparation period is short, and it is proved that the MnxGey crystal is single-phase and free of impurities and twin crystals. In addition, the single crystal material has a small coercive field, can be used as a soft magnetic material for increasing the magnetic flux density in a weak magnetic field, has the Curie temperature up to 322K and the magnetization intensity up to 10-30emu/g, has the advantages of high initial magnetic conductivity and maximum magnetic conductivity, has technical parameters applied to the soft magnetic material, and is suitable for being applied to low-frequency electromagnetic elements.

Description

Technical field [0001] The present invention relates to the field of preparation of new materials, and more particularly to a orthogonal alcoholic crystal material and a preparation method thereof. Background technique [0002] In recent years, since the metal silicide has a rich type of crystal structure and novelty, researchers have attracted the extensive research interests of researchers. TM (t is a transition metal, M = Si and GE) an important research direction of the system. The TM has a orthogonal phase (α phase), and the spatial group number is PNMA and the spatial group number: 62. In addition, TM also has a high temperature phase (β phase), the spatial group is P213, the spatial group number: 198, is a non-center symmetrical structure. These non-symmetrical TM materials need to be prepared under conditions (> 1200 ° C) or even high temperature and high pressure, such as RHGE, and the preparation conditions are 80,000 atmospheric pressure and high temperature and hig...

Claims

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Application Information

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IPC IPC(8): C30B29/52C30B1/12C30B33/02
CPCC30B29/52C30B1/12C30B33/02
Inventor 于振海栗中杨郭艳峰
Owner SHANGHAI TECH UNIV
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