A kind of n-type tin telluride thermoelectric material and preparation method thereof

A thermoelectric material, tin telluride technology, applied in the direction of thermoelectric device junction lead-out material, thermoelectric device manufacturing/processing, etc., can solve the problem that Sn vacancies are difficult to eliminate, n-type tin telluride synthesis technology and performance reports and research, It is difficult to realize n-type tin telluride and other problems to achieve the effect of optimal thermoelectric performance
CN113066922BActive Publication Date: 2021-12-07BEIHANG UNIV

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
BEIHANG UNIV
Publication Date
2021-12-07

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention belongs to the technical field of semiconductor materials, and provides an n-type tin telluride thermoelectric material and a preparation method thereof. The preparation method comprises: combining Sn, Te, Pb and SnI 2 The molar ratio is: (1-x-y), (1-2y), x and y are mixed to obtain a mixed material; the mixed material is put into a quartz tube and vacuumized; the The quartz tube of the mixed material is placed in a heat treatment furnace for synthesis reaction to obtain an n-type SnTe ingot; the n-type SnTe ingot is ground into powder and put into a graphite mold, and the graphite mold containing the n-type SnTe ingot powder Put it into a sintering furnace for sintering to obtain an n-type SnTe sample. The present invention introduces Pb element to make it completely dissolve into the SnTe matrix, thereby making up for intrinsic Sn vacancies, reducing the hole concentration of SnTe, and providing prerequisites for realizing the transformation from p-type to n-type of SnTe. At the same time, I Substituting Te element for electronic doping, and then successfully synthesized n-type SnTe thermoelectric material.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of semiconductor materials, in particular to an n-type tin telluride thermoelectric material and a preparation method thereof. Background technique

[0002] Tin telluride (SnTe) is an important semiconductor material, which has important application value in the field of thermoelectric energy materials and ferroelectric materials, especially as a thermoelectric material, it has received extensive attention at home and abroad. Thermoelectric energy conversion material is a new type of functional material, which uses temperature difference to drive the directional migration of carriers to achieve direct and reversible mutual conversion between thermal energy and electrical energy. Thermoelectric materials have the advantages of small size, no pollutant emission, high reliability, and wide application temperature range. They have broad development prospects in strategic new energy technologies such as aerospace...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More