30results about How to "Band gap adjustable" patented technology

The invention discloses a perovskite/silicon heterojunction stacked solar cell structure, which comprises a top cell layer and a bottom cell layer arranged vertically, wherein a tunneling layer is arranged between the top cell layer and the bottom cell layer; the top cell layer comprises an upper transparent conductive film, an electron or hole transport layer, a mixed cation mixed halogen perovskite layer and a hole or electron transport layer arranged sequentially from the front surface to the back surface; and the bottom cell layer comprises an n-or p-type amorphous silicon film and an upper intrinsic amorphous silicon film, a single crystal silicon layer, a lower intrinsic amorphous silicon film, a p-type or n-type amorphous silicon film and a lower transparent conductive film arrangedsequentially from the front surface to the back surface. The invention also discloses a perovskite/silicon heterojunction stacked solar cell structure manufacturing method. According to the perovskite/silicon heterojunction stacked solar cell structure and the manufacturing method thereof, after the bottom cell amorphous silicon film is manufactured, a high temperature process does not need to beused and an independent perovskite protection layer does not need to be used either. While the technological process is shortened and extra cost is avoided, the cell stability is also enhanced.

This invented P-Zn1-xMgxO crystal film is one doped by one or several in B, Al, Ga and In as the donor and one or several of N, P, AS gases as the acceptor, the molar content of X is larger than 0 smaller than 40%, and the doped density is 1015~1019cm[-3]. The film is prepared by pulse laser deposition, the target is a ceramic one sintered with pure ZnO, MgO and donor doping agent powder, among which, the molar content of MgO is larger than 0 but smaller than 40%, that of the donor doping agent is larger than 0 but smaller than 3%, the grown temperature is 400~700deg.C, the grown atmosphere is a mixed gas containing the acceptor activated by plasma and pure O2, the doped density can be controlled by adjusting different intrinsic stand-off ratios of the input gas with acceptor and O2 and molar content of the donor doping agents in the target material and the successive annealing temperature.

The invention provides a femtosecond laser ablation-based infrared-enhanced Si-PIN detector and a preparation method thereof. The detector comprises an intrinsic silicon substrate, a femtosecond laser ablation microstructure layer, an infrared-enhanced amorphous silicon-ruthenium alloy film, a lower electrode, a P-type region, an annular P+ type region and an upper electrode, wherein the femtosecond laser ablation microstructure layer is a micron sharp cone array. The unabsorbed light which transmits through a space charge region is reflected for multiple times; a light propagation path and the photo capture ratio are increased; absorption and utilization of the light are improved; more photo-induced carriers are excited; the responsivity of the detector is improved; a relatively narrow optical band gap is obtained through controlling the ruthenium content; and the band gap of a silicon material is narrowed, so that near-infrared light with lower energy and a larger wavelength is captured; absorption of the near-infrared light can be additionally increased; and the detection spectrum range of a photoelectric detector is expanded.

The invention discloses a method for preparing a molybdenum sulfide two-dimensional material by adopting MOCVD (Metal Organic Chemical Vapor Deposition) equipment, and the method is used for growing the MoS2 two-dimensional material on a Sapphire substrate in multiple steps, and comprises the following steps of: adopting Sapphire as the substrate; conveying the Sapphire substrate into an MOCVD (Metal Organic Chemical Vapor Deposition) equipment; introduced N2 gas into a MOCVD cavity; raising the temperature to a constant-temperature growth temperature, wherein the initial pressure in the cavity is 90Torr; introducing H2S as a sulfur gas source; introducing MO (CO) 6 as a molybdenum gas source for nucleation; reducing the pressure intensity in the cavity step by step, and promoting nucleation crystal grains to transversely grow so as to obtain the MoS2 two-dimensional material growing on the Saphire substrate. The preparation method provided by the invention has the advantages of simplegrowth process, controllable material thickness, high quality and the like. Through the preparation method provided by the invention, the MoS2 two-dimensional material which is adjustable in forbidden band width and can be used for flexible chip application is grown.

The invention discloses a P type doped ZnSxSe1-x nano material and a preparation method thereof. A doping source of P type doping is selected from one or several of AgS, CuS, NH3 and PH3. According to the P type doped ZnSxSe1-x nano material and the preparation method thereof, a chemical vapor deposition method is adopted, the P type doped ZnSxSe1-x nano material is synthesized by utilizing a gas-liquid-solid growth mechanism, and the ZnSxSe1-x nano material with different components can be obtained by adjusting the proportion of raw materials of ZnSe and ZnS; and the electric conductivity ofthe nano material obtained by preparation can be adjusted by adjusting the doping quantity, so that the characteristics of controllable components and adjustable electric conductivity of the P type doped ZnSxSe1-x nano material are realized.

The invention discloses a preparation method and application of a purple phosphorus/graphene composite material. According to the invention, purple phosphorus is stripped by using a physical method to obtain single-layer or few-layer purple phosphorus; then the purple phosphorus and graphene are compounded by means of suction filtration, spin coating, heat release of an adhesive tape and the like to construct a purple phosphorus/graphene heterojunction; and finally, assembling is conducted to obtain a purple phosphorus/graphene composite gas sensor. According to the invention, the heterojunction is constructed between two materials, electrons are provided by the graphene, and adsorption sites are provided by the purple phosphorus, so the application of the purple phosphorus as the gas sensor for measurement is realized, and compared with pure graphene, resistance change is improved to more than 30 times of the original resistance change; and the preparation process provided by the invention is safe and pollution-free, and the preparation process can be completed in an open environment at normal temperature and normal pressure.

The invention discloses a Li doping p-Zn1-xMgxO transistor film, which is characterized by the following: molar content x of MgO is between 0 and 20 percent and y molar content of Li is between 0 and 2 percent; the carrier density of Li doping p-Zn1-xMgxO transistor film is 1015-1019cm-3; the film adopts pulse laser sedimenting method; the target material is ceramic target sintered by high-pure ZnO, MgO and Li2CO3 powder, wherein the MgO molar content x is between 0 and 20 percent; the Li2CO3 molar content y is between 0 and 1 percent, whose pressure is 0.1-50 Pa with growing temperature at 400-700 deg.c under high-oxygen environment; the doping density can be adjusted through controlling Li content in the target material.

The invention discloses a preparation method of porous strontium titanate cubic particles doped with rare earth erbium ions. The method comprises the following steps that titanium sulfate and potassium hydroxide are dissolved into deionized water separately at first, an appropriate amount of potassium hydroxide solution is dripped into a titanium sulfate solution to form precipitation, and after washing is conducted many times, strontium nitrate, erbium nitrate and potassium hydroxide are mixed, then a hydrothermal reaction is conducted, and the porous strontium titanate cubic particles dopedwith the rare earth erbium ions are obtained after washing and drying are conducted. The porous strontium titanate cubic particles doped with the erbium ions have the advantages of being large in specific surface area, adjustable in band gap, excellent in oxidation and reduction catalytic activity and the like, and the method has wide application prospects in the fields of photocatalytic water-splitting for hydrogen production, photocatalytic degradation of organic pollutants, photochemical batteries and the like.

The invention discloses a laminated thin-film solar cell based on a Sb2S3 top battery and a preparation method of the laminated thin-film solar cell, and belongs to the field of thin-film solar cells.The laminated thin-film solar cell comprises a transparent conducting layer, the top battery, a middle composite layer, a bottom battery and a metal electrodes from top to bottom, wherein the metal electrodes are arranged at the lower ends of the transparent conducting layer and the bottom battery, the top battery is an Sb2S3 thin-film battery, and the bottom battery is a PbS quantum dot thin-film battery. The Sb2S3 thin-film battery and the PbS quantum dot thin-film battery are laminated to form the laminated battery, the forbidden bandwidth of the Sb2S3 thin-film battery is 1.73eV, and theforbidden bandwidth of the PbS quantum dot thin-film battery can be adjusted within the range of 1.03eV-1.45eV. The forbidden bandwidth of the prepared laminated battery is complementary, a spectrum absorption range can be widened, photoelectric conversion efficiency is greatly improved, and cost is reduced.

The invention relates to the technical field of semiconductor materials and device manufacturing, and discloses a production method of an AlSb-GeSn-AlSb heterostructure solid-state plasma PiN diode and a device thereof. The production method comprises the following steps: selecting a GeOI substrate of a certain crystal orientation, and carrying out the doping in the GeOI substrate to form a top layer GeSn region; arranging a deep groove isolation region in the GeSn region on the top layer of the substrate; etching the GeSn region to form a P type groove and an N type groove; forming a P-type active region and an N-type active region in the P-type groove and the N-type groove by adopting ion implantation; and forming a GeSn alloy lead on the substrate. According to the production method and the device thereof, the distribution characteristics of solid-state plasma at the bottom and in the middle of an intrinsic region are improved so that the carrier concentration and the distribution uniformity are greatly improved, and the gain of the silicon-based reconfigurable antenna is increased.

The invention relates to a preparation method of a silicon-based CdTe-GeSn-CdTe heterogeneous transverse PiN diode and a device of the silicon-based CdTe-GeSn-CdTe heterogeneous transverse PiN diode. The preparation method comprises the following steps: selecting a GeOI substrate, and doping in the GeOI substrate to form a top GeSn region; arranging a deep groove isolating region in the GeSn region on the top layer of the substrate; etching the GeSn region to form a P-type groove and an N-type groove of which the depths are smaller than the thickness of the top layer GeSn region; forming a P-type active region and an N-type active region in the P-type groove and the N-type groove by adopting ion implantation; and forming a GeSn alloy lead on the substrate, so that the preparation of the silicon-based CdTe-GeSn-CdTe heterogeneous transverse PiN diode is completed. According to the diode disclosed by the invention, the carrier mobility and the distribution uniformity are greatly improved by introducing the top GeSn region, meanwhile, the carrier transport characteristic is greatly improved, and the microwave characteristic of the solid-state plasma PiN diode is remarkably improved.