31results about How to "Band gap adjustable" patented technology

A process for preparing the p-type Zn1-xMgxO crystal film includes providing high-purity ZnO, MgO and p-type dopant powder, proportional mixing, grinding, adding organic adhesive, die pressing, sintering to obtain p-type doped Zn1-xMgxO ceramic target, and using laser to irradiate the ceramic target in high-purity oxygen to grow th p-type Zn1-xMgxO crystal film on clean substrate.

The invention discloses an all-inorganic perovskite single crystal-based radiation detector, which comprises an all-inorganic perovskite single crystal for converting high energy radiation into an electron-hole pair, and two electrodes for collecting the electron-hole pair respectively arranged above two sides of the all-inorganic perovskite single crystal. The invention also provides a method for preparing the radiation detector by a combination of a solution method, a Bridgman method and a vapor deposition method. The preparation process is simple and convenient to operate. The all-inorganic perovskite single crystal in the radiation detector has the advantages of adjustable forbidden bandgap width, high carrier mobility, good bipolar charge transmission characteristics, and exciton diffusion length of more than 1 mu m. The radiation detector has the advantages of simple structure, reasonable design, excellent stability, and broad application prospect.

The invention discloses an organic-inorganic hybrid perovskite MAPbBr3 film material with a gradient energy band structure. The optical band gap of the MAPbBr3 film material is adjustable from 1.36-2.47eV, wherein MA represents an organic cation CH3NH3+, and the MAPbBr3 film material The thickness of the film is in the range of 40nm‑100nm. The invention also discloses a preparation method of the organic-inorganic hybrid perovskite MAPbBr3 film material with gradient energy band structure.

The invention relates to a method for preparing a fixed-point replaced amorphous nanowire array with Si. The method includes the steps that (1) zinc acetate and germanium oxide are added into a mixed solvent of water and ethylenediamine; (2) the mixture obtained from the step (1) is stirred with magnetic force to obtain a homogeneous solution; (3) pretreatment is conducted on a monocrystal Si piece, and then washing and drying are conducted; (4) the pretreated monocrystal Si piece is added in the homogeneous solution obtained from the step (2), and then a hydrothermal reaction is conducted; (5) the reaction product is cooled, washed and dried, and a final product is obtained on the Si piece. Compared with the prior art, the preparation method is novel, repeatability is good, the product property is stable, the product has a larger specific surface area and higher surface activity and light utilization efficiency, and the product can be widely applicable to many energy storage fields of photoelectric devices, solar cells, lithium-ion batteries, supercapacitors and the like.

The invention provides a large-area horizontal depletion type neutron detector and a preparation method thereof. The neutron detector comprises a substrate, an absorption layer, a CdS layer, a ZnO layer, a first electrode and a second electrode, wherein the absorption layer is located on the substrate and formed by CuInSe2, the CdS layer is located on the absorption layer and forms a heterojunction with the absorption layer, the CdS layer comprises a first contact hole enabling at least one part of the absorption layer to be exposed, the ZnO layer is located on the CdS layer and comprises a second contact hole which corresponds to the first contact hole and enables at least one part of the CdS layer to be exposed, the first electrode makes contact with the ZnO layer, the second electrode makes contact with the absorption layer through the first contact hole and the second contact hole, and the first electrode and the second electrode are spaced by a preset interval. The CuInSe2 / CdS semiconductor heterojunction layer is adopted for replacing SiC for preparing the radiation resistant semiconductor neutron detector; on the one hand, the cost can be lowered; on the other hand, the problem of manufacturing a large-area area array type detector can be solved.

The invention discloses a process for doping growth P-type Zn1-xMgxO crystal film into stibium, which uses a pulsed laser deposition. A target material is ceramic target which is mixed sintered by pure ZnO, MgO and Sb2O3 power, wherein molar content x of Mg is less than 20 percent and more than 0, and the molar content y of stibium is less than 5 percent and more than 0. After being cleaned, a substrate is put into a growth chamber of a pulsed laser deposition device, the growth chamber is pumped to a vacuum, the substrate grows under pure oxygen whose pressure is 0.1-1Pa, and the growth temperature is 300-500 DEG C. The invention is simple, P-type doping concentration is capable of being controlled through adjusting the molar content of the stibium in the target material, because doping elements come from the target material, and high-concentration dopant is capable of being achieved. The P-type Zn1-xMgxO crystal film which is prepared by the process has excellent electrical properties, and the carrier concentration is 1015-1017 cm-3.

The invention discloses a laminated thin-film solar cell based on a Sb2S3 top battery and a preparation method of the laminated thin-film solar cell, and belongs to the field of thin-film solar cells.The laminated thin-film solar cell comprises a transparent conducting layer, the top battery, a middle composite layer, a bottom battery and a metal electrodes from top to bottom, wherein the metal electrodes are arranged at the lower ends of the transparent conducting layer and the bottom battery, the top battery is an Sb2S3 thin-film battery, and the bottom battery is a PbS quantum dot thin-film battery. The Sb2S3 thin-film battery and the PbS quantum dot thin-film battery are laminated to form the laminated battery, the forbidden bandwidth of the Sb2S3 thin-film battery is 1.73eV, and theforbidden bandwidth of the PbS quantum dot thin-film battery can be adjusted within the range of 1.03eV-1.45eV. The forbidden bandwidth of the prepared laminated battery is complementary, a spectrum absorption range can be widened, photoelectric conversion efficiency is greatly improved, and cost is reduced.

This invented P-Zn1-xMgxO crystal film is one doped by one or several in B, Al, Ga and In as the donor and one or several of N, P, AS gases as the acceptor, the molar content of X is larger than 0 smaller than 40%, and the doped density is 1015~1019cm[-3]. The film is prepared by pulse laser deposition, the target is a ceramic one sintered with pure ZnO, MgO and donor doping agent powder, among which, the molar content of MgO is larger than 0 but smaller than 40%, that of the donor doping agent is larger than 0 but smaller than 3%, the grown temperature is 400~700deg.C, the grown atmosphere is a mixed gas containing the acceptor activated by plasma and pure O2, the doped density can be controlled by adjusting different intrinsic stand-off ratios of the input gas with acceptor and O2 and molar content of the donor doping agents in the target material and the successive annealing temperature.

A process for preparing n-type Zn1-xMgxO crystal film by pulse laser deposition method includes providing high-purity ZnO, MgO and n-type dopant powder, proportional mixing, grinding, adding organic adhesive, die pressing, sintering to obtain the n-type doped Zn1-xMgxO ceramic target, and using laser to irradiate the target in high-purity oxygen to grow the n-type Zn1-xMgxO crystal film on clean substrate.

The invention discloses a P type doped ZnSxSe1-x nano material and a preparation method thereof. A doping source of P type doping is selected from one or several of AgS, CuS, NH3 and PH3. According to the P type doped ZnSxSe1-x nano material and the preparation method thereof, a chemical vapor deposition method is adopted, the P type doped ZnSxSe1-x nano material is synthesized by utilizing a gas-liquid-solid growth mechanism, and the ZnSxSe1-x nano material with different components can be obtained by adjusting the proportion of raw materials of ZnSe and ZnS; and the electric conductivity ofthe nano material obtained by preparation can be adjusted by adjusting the doping quantity, so that the characteristics of controllable components and adjustable electric conductivity of the P type doped ZnSxSe1-x nano material are realized.

The invention provides a palladium-doped carbon film material with photovoltaic effect. A film with the thickness of 20-200nm is sputtered on a 0.5-1.0mm mono-crystalline silicon wafer to manufacture a palladium-doped carbon film / silicon dioxide / silicon material or palladium-doped carbon film / silicon heterogenous junction material, wherein the film with the thickness of 20-200nm is a carbon film with the doped palladium atom content of 0-5%. The material has photovoltaic effect, and can be used for manufacturing solar cells and photosensitive devices; and the manufactured solar cells have higher conversion efficiency, and have simple manufacture process and high finished product ratio.

The invention discloses a method for preparing a molybdenum sulfide two-dimensional material by adopting MOCVD (Metal Organic Chemical Vapor Deposition) equipment, and the method is used for growing the MoS2 two-dimensional material on a Sapphire substrate in multiple steps, and comprises the following steps of: adopting Sapphire as the substrate; conveying the Sapphire substrate into an MOCVD (Metal Organic Chemical Vapor Deposition) equipment; introduced N2 gas into a MOCVD cavity; raising the temperature to a constant-temperature growth temperature, wherein the initial pressure in the cavity is 90Torr; introducing H2S as a sulfur gas source; introducing MO (CO) 6 as a molybdenum gas source for nucleation; reducing the pressure intensity in the cavity step by step, and promoting nucleation crystal grains to transversely grow so as to obtain the MoS2 two-dimensional material growing on the Saphire substrate. The preparation method provided by the invention has the advantages of simplegrowth process, controllable material thickness, high quality and the like. Through the preparation method provided by the invention, the MoS2 two-dimensional material which is adjustable in forbidden band width and can be used for flexible chip application is grown.

The invention discloses a Li doping p-Zn1-xMgxO transistor film, which is characterized by the following: molar content x of MgO is between 0 and 20 percent and y molar content of Li is between 0 and 2 percent; the carrier density of Li doping p-Zn1-xMgxO transistor film is 1015-1019cm-3; the film adopts pulse laser sedimenting method; the target material is ceramic target sintered by high-pure ZnO, MgO and Li2CO3 powder, wherein the MgO molar content x is between 0 and 20 percent; the Li2CO3 molar content y is between 0 and 1 percent, whose pressure is 0.1-50 Pa with growing temperature at 400-700 deg.c under high-oxygen environment; the doping density can be adjusted through controlling Li content in the target material.

The invention belongs to the technical field related to implantable bioelectronic devices, and discloses a passive flexible retinal prosthesis and a preparation method thereof. The retinal prosthesis includes a flexible base, a first package arranged on the flexible base layer and a functional layer disposed on the surface of the first encapsulation layer away from the flexible substrate, the functional layer includes a light absorbing layer, the composition material of the light absorbing layer is doped with silicon nanoparticles; the flexible substrate Or the functional layer is formed with a submicron microhole array structure. The invention utilizes the microporous structure with good light absorption ability and the surface plasmon excitation effect of silicon nanoparticles to improve the light absorption rate and photoelectric conversion efficiency, and has good flexibility and strong applicability.