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31results about How to "Band gap adjustable" patented technology
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Graphene transistor based on metamaterial structure, optical sensor based on metamaterial structure, and application of graphene transistor
ActiveCN103117316APromote absorptionAdjustableRadiation pyrometrySpectrum investigationMicro nanoUltra-wideband
Disclosed are a graphene transistor based on a metamaterial structure, an optical sensor based on a metamaterial structure, and application of the graphene transistor. The graphene transistor sequentially comprises a liner, a grid metal layer, a grid medium layer, a grapheme layer and a source and drain metal layer from bottom to top. At least local area of the source and drain metal layer is provided with a periodicity micro-nano structure. The periodicity micro-nano structure, the grid metal layer and the grid medium layer match to form the metamaterial structure with the feature of complete absorption. By changing refractive index, thickness and the like of the periodicity micro-nano structure and the grid medium layer material, optical absorption frequency range of the metamaterial structure can be adjusted. Due to the feature of perfect wavelength selectivity absorption, higher flexibility and narrow-band response of the metamaterial structure, the graphene transistor can work under visible light to infrared even longer wave bands by selecting different metamaterial structures. By integrating optical sensor working in different wave bands, image sensors, spectrum detecting analyzing device and the like which can work in ultra-wide bands can be formed.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Perovskite/silicon heterojunction stacked solar cell structure and manufacturing method thereof
PendingCN108447926AShort processAvoid additional costsFinal product manufacturePhotovoltaic energy generationSolar cellSilicon heterojunction
The invention discloses a perovskite / silicon heterojunction stacked solar cell structure, which comprises a top cell layer and a bottom cell layer arranged vertically, wherein a tunneling layer is arranged between the top cell layer and the bottom cell layer; the top cell layer comprises an upper transparent conductive film, an electron or hole transport layer, a mixed cation mixed halogen perovskite layer and a hole or electron transport layer arranged sequentially from the front surface to the back surface; and the bottom cell layer comprises an n-or p-type amorphous silicon film and an upper intrinsic amorphous silicon film, a single crystal silicon layer, a lower intrinsic amorphous silicon film, a p-type or n-type amorphous silicon film and a lower transparent conductive film arrangedsequentially from the front surface to the back surface. The invention also discloses a perovskite / silicon heterojunction stacked solar cell structure manufacturing method. According to the perovskite / silicon heterojunction stacked solar cell structure and the manufacturing method thereof, after the bottom cell amorphous silicon film is manufactured, a high temperature process does not need to beused and an independent perovskite protection layer does not need to be used either. While the technological process is shortened and extra cost is avoided, the cell stability is also enhanced.
Owner:嘉兴尚羿新能源有限公司
P-zn1-xmgxo crystal film and method for making same
InactiveCN1542915ABand gap adjustableQuality improvementLaser detailsSemiconductor/solid-state device manufacturingDopantMetallurgy
This invented P-Zn1-xMgxO crystal film is one doped by one or several in B, Al, Ga and In as the donor and one or several of N, P, AS gases as the acceptor, the molar content of X is larger than 0 smaller than 40%, and the doped density is 1015~1019cm[-3]. The film is prepared by pulse laser deposition, the target is a ceramic one sintered with pure ZnO, MgO and donor doping agent powder, among which, the molar content of MgO is larger than 0 but smaller than 40%, that of the donor doping agent is larger than 0 but smaller than 3%, the grown temperature is 400~700deg.C, the grown atmosphere is a mixed gas containing the acceptor activated by plasma and pure O2, the doped density can be controlled by adjusting different intrinsic stand-off ratios of the input gas with acceptor and O2 and molar content of the donor doping agents in the target material and the successive annealing temperature.
Owner:ZHEJIANG UNIV
Femtosecond laser ablation-based infrared-enhanced Si-PIN detector and preparation method thereof
InactiveCN106206831AImprove light absorptionBand gap adjustableFinal product manufactureSemiconductor devicesPath lengthAlloy
The invention provides a femtosecond laser ablation-based infrared-enhanced Si-PIN detector and a preparation method thereof. The detector comprises an intrinsic silicon substrate, a femtosecond laser ablation microstructure layer, an infrared-enhanced amorphous silicon-ruthenium alloy film, a lower electrode, a P-type region, an annular P+ type region and an upper electrode, wherein the femtosecond laser ablation microstructure layer is a micron sharp cone array. The unabsorbed light which transmits through a space charge region is reflected for multiple times; a light propagation path and the photo capture ratio are increased; absorption and utilization of the light are improved; more photo-induced carriers are excited; the responsivity of the detector is improved; a relatively narrow optical band gap is obtained through controlling the ruthenium content; and the band gap of a silicon material is narrowed, so that near-infrared light with lower energy and a larger wavelength is captured; absorption of the near-infrared light can be additionally increased; and the detection spectrum range of a photoelectric detector is expanded.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
Method for preparing molybdenum sulfide two-dimensional material by adopting MOCVD equipment
ActiveCN110655111AThickness is easy to controlControl nucleation densityChemical vapor deposition coatingMolybdenum sulfidesPhysical chemistrySulfidation
The invention discloses a method for preparing a molybdenum sulfide two-dimensional material by adopting MOCVD (Metal Organic Chemical Vapor Deposition) equipment, and the method is used for growing the MoS2 two-dimensional material on a Sapphire substrate in multiple steps, and comprises the following steps of: adopting Sapphire as the substrate; conveying the Sapphire substrate into an MOCVD (Metal Organic Chemical Vapor Deposition) equipment; introduced N2 gas into a MOCVD cavity; raising the temperature to a constant-temperature growth temperature, wherein the initial pressure in the cavity is 90Torr; introducing H2S as a sulfur gas source; introducing MO (CO) 6 as a molybdenum gas source for nucleation; reducing the pressure intensity in the cavity step by step, and promoting nucleation crystal grains to transversely grow so as to obtain the MoS2 two-dimensional material growing on the Saphire substrate. The preparation method provided by the invention has the advantages of simplegrowth process, controllable material thickness, high quality and the like. Through the preparation method provided by the invention, the MoS2 two-dimensional material which is adjustable in forbidden band width and can be used for flexible chip application is grown.
Owner:ZHEJIANG UNIV
Palladium-doped carbon film/oxide/semiconductor material with photoconductive effect
InactiveCN102214722AWith photoconductive effectNon-toxicFinal product manufactureSemiconductor devicesCarbon filmSemiconductor materials
The invention provides a palladium-doped carbon film / oxide / semiconductor material with a photoconductive effect, which is characterized in that graphite composite targets which are doped with atomicity contents being 0-5% of palladium are sputtered on a 0.5-1.0mm-thick semiconductor substrate with oxides to form a film with 20-200nanometer in thickness so as to prepare the palladium-doped carbon film / oxide / semiconductor material. The palladium-doped carbon film / oxide / semiconductor material has the photoconductive effect and a good linear relation between light current and light radiation intensity exists, thus the palladium-doped carbon film / oxide / semiconductor material can be used to manufacture optoelectronic sensors. The optoelectronic sensors can operate at room temperature, are simple in structure and low in cost, the production technology is simple and the rate of finished products is high, and the optoelectronic sensors have wide application prospects.
Owner:CHINA UNIV OF PETROLEUM (EAST CHINA)
P type doped ZnSxSe1-x nano material and preparation method thereof
InactiveCN102602984ABand gap adjustableMaterial nanotechnologyZinc sulfidesChemical vapor depositionP type doping
The invention discloses a P type doped ZnSxSe1-x nano material and a preparation method thereof. A doping source of P type doping is selected from one or several of AgS, CuS, NH3 and PH3. According to the P type doped ZnSxSe1-x nano material and the preparation method thereof, a chemical vapor deposition method is adopted, the P type doped ZnSxSe1-x nano material is synthesized by utilizing a gas-liquid-solid growth mechanism, and the ZnSxSe1-x nano material with different components can be obtained by adjusting the proportion of raw materials of ZnSe and ZnS; and the electric conductivity ofthe nano material obtained by preparation can be adjusted by adjusting the doping quantity, so that the characteristics of controllable components and adjustable electric conductivity of the P type doped ZnSxSe1-x nano material are realized.
Owner:HEFEI UNIV OF TECH
Passive flexible retinal prosthesis and preparation method thereof
ActiveCN110010766ASolve the problem of low photoelectric conversion efficiencyImprove stabilityMaterial nanotechnologyEye implantsSurface plasmon excitationSurface plasmon
The present invention belongs to the technical field of implantable bioelectronic devices and discloses a passive type flexible retinal prosthesis and a preparation method thereof. The retina prosthesis comprises a flexible substrate, a first encapsulation layer disposed on the flexible substrate and a functional layer disposed on a surface of the first encapsulation layer away from the flexible substrate. The functional layer comprises a light absorbing layer, the constituent material of the light absorbing layer is doped with silicon nanoparticles, and a sub-micron microporous array structure is formed in the flexible substrate or the functional layer. According to the invention, the light absorption rate and the photoelectric conversion efficiency are improved by using a microporous structure with good light absorption ability and the surface plasmon excitation effect of the silicon nanoparticles, the flexibility is good, and the applicability is high.
Owner:HUAZHONG UNIV OF SCI & TECH
Preparation method and application of purple phosphorus/graphene composite material
PendingCN112758918AImprove adsorption capacityImprove electrical conductivityGrapheneMaterial resistanceGrapheneGraphite
The invention discloses a preparation method and application of a purple phosphorus / graphene composite material. According to the invention, purple phosphorus is stripped by using a physical method to obtain single-layer or few-layer purple phosphorus; then the purple phosphorus and graphene are compounded by means of suction filtration, spin coating, heat release of an adhesive tape and the like to construct a purple phosphorus / graphene heterojunction; and finally, assembling is conducted to obtain a purple phosphorus / graphene composite gas sensor. According to the invention, the heterojunction is constructed between two materials, electrons are provided by the graphene, and adsorption sites are provided by the purple phosphorus, so the application of the purple phosphorus as the gas sensor for measurement is realized, and compared with pure graphene, resistance change is improved to more than 30 times of the original resistance change; and the preparation process provided by the invention is safe and pollution-free, and the preparation process can be completed in an open environment at normal temperature and normal pressure.
Owner:SHAANXI UNIV OF SCI & TECH
Li-doped p-Zn1-xMgxO crystal film and method for preparing same
InactiveCN1880521AImprove stabilityGood repeatabilityFrom condensed vaporsSemiconductor devicesCharge carrierPulsed laser deposition
The invention discloses a Li doping p-Zn1-xMgxO transistor film, which is characterized by the following: molar content x of MgO is between 0 and 20 percent and y molar content of Li is between 0 and 2 percent; the carrier density of Li doping p-Zn1-xMgxO transistor film is 1015-1019cm-3; the film adopts pulse laser sedimenting method; the target material is ceramic target sintered by high-pure ZnO, MgO and Li2CO3 powder, wherein the MgO molar content x is between 0 and 20 percent; the Li2CO3 molar content y is between 0 and 1 percent, whose pressure is 0.1-50 Pa with growing temperature at 400-700 deg.c under high-oxygen environment; the doping density can be adjusted through controlling Li content in the target material.
Owner:ZHEJIANG UNIV
Preparation method of porous strontium titanate cubic particles doped with rare earth erbium ions
InactiveCN110102281ALarge specific surface areaBand gap adjustableMetal/metal-oxides/metal-hydroxide catalystsStrontium titanatePhotocatalytic water splitting
The invention discloses a preparation method of porous strontium titanate cubic particles doped with rare earth erbium ions. The method comprises the following steps that titanium sulfate and potassium hydroxide are dissolved into deionized water separately at first, an appropriate amount of potassium hydroxide solution is dripped into a titanium sulfate solution to form precipitation, and after washing is conducted many times, strontium nitrate, erbium nitrate and potassium hydroxide are mixed, then a hydrothermal reaction is conducted, and the porous strontium titanate cubic particles dopedwith the rare earth erbium ions are obtained after washing and drying are conducted. The porous strontium titanate cubic particles doped with the erbium ions have the advantages of being large in specific surface area, adjustable in band gap, excellent in oxidation and reduction catalytic activity and the like, and the method has wide application prospects in the fields of photocatalytic water-splitting for hydrogen production, photocatalytic degradation of organic pollutants, photochemical batteries and the like.
Owner:CHINA JILIANG UNIV
Laminated thin-film solar cell based on Sb2S3 top battery and preparation method of laminated thin-film solar cell
ActiveCN108281501AExpand the scope of absorptionEfficient use ofFinal product manufacturePhotovoltaic energy generationQuantum dotEngineering
The invention discloses a laminated thin-film solar cell based on a Sb2S3 top battery and a preparation method of the laminated thin-film solar cell, and belongs to the field of thin-film solar cells.The laminated thin-film solar cell comprises a transparent conducting layer, the top battery, a middle composite layer, a bottom battery and a metal electrodes from top to bottom, wherein the metal electrodes are arranged at the lower ends of the transparent conducting layer and the bottom battery, the top battery is an Sb2S3 thin-film battery, and the bottom battery is a PbS quantum dot thin-film battery. The Sb2S3 thin-film battery and the PbS quantum dot thin-film battery are laminated to form the laminated battery, the forbidden bandwidth of the Sb2S3 thin-film battery is 1.73eV, and theforbidden bandwidth of the PbS quantum dot thin-film battery can be adjusted within the range of 1.03eV-1.45eV. The forbidden bandwidth of the prepared laminated battery is complementary, a spectrum absorption range can be widened, photoelectric conversion efficiency is greatly improved, and cost is reduced.
Owner:HUAZHONG UNIV OF SCI & TECH +1
Method for preparing p-type Zn1-XMgXO crystal film
InactiveCN1240883CAchieve p-type dopingHigh dopant concentrationFrom condensed vaporsAdhesiveMetallurgy
Owner:ZHEJIANG UNIV
Method for preparing fixed-point replaced amorphous nanowire array with Si
InactiveCN107089663ANoveltyStable structureHydrogen productionSilicon compoundsEthylenediamineSingle crystal
The invention relates to a method for preparing a fixed-point replaced amorphous nanowire array with Si. The method includes the steps that (1) zinc acetate and germanium oxide are added into a mixed solvent of water and ethylenediamine; (2) the mixture obtained from the step (1) is stirred with magnetic force to obtain a homogeneous solution; (3) pretreatment is conducted on a monocrystal Si piece, and then washing and drying are conducted; (4) the pretreated monocrystal Si piece is added in the homogeneous solution obtained from the step (2), and then a hydrothermal reaction is conducted; (5) the reaction product is cooled, washed and dried, and a final product is obtained on the Si piece. Compared with the prior art, the preparation method is novel, repeatability is good, the product property is stable, the product has a larger specific surface area and higher surface activity and light utilization efficiency, and the product can be widely applicable to many energy storage fields of photoelectric devices, solar cells, lithium-ion batteries, supercapacitors and the like.
Owner:TONGJI UNIV
A kind of preparation method of radiation detector based on all-inorganic perovskite single crystal
InactiveCN106847956BImprove collection efficiencyLarge atomic numberSemiconductor devicesElectron holeBridgman method
The invention discloses an all-inorganic perovskite single crystal-based radiation detector, which comprises an all-inorganic perovskite single crystal for converting high energy radiation into an electron-hole pair, and two electrodes for collecting the electron-hole pair respectively arranged above two sides of the all-inorganic perovskite single crystal. The invention also provides a method for preparing the radiation detector by a combination of a solution method, a Bridgman method and a vapor deposition method. The preparation process is simple and convenient to operate. The all-inorganic perovskite single crystal in the radiation detector has the advantages of adjustable forbidden bandgap width, high carrier mobility, good bipolar charge transmission characteristics, and exciton diffusion length of more than 1 mu m. The radiation detector has the advantages of simple structure, reasonable design, excellent stability, and broad application prospect.
Owner:MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
An organic-inorganic hybrid perovskite mapbbr with a gradient band structure 3 Materials and methods of making the same
InactiveCN104882543BBand gap adjustableWide Bandgap Adjustment RangeSolid-state devicesSemiconductor/solid-state device manufacturingCrystallographyPerovskite (structure)
The invention discloses an organic-inorganic hybrid perovskite MAPbBr3 film material with a gradient energy band structure. The optical band gap of the MAPbBr3 film material is adjustable from 1.36-2.47eV, wherein MA represents an organic cation CH3NH3+, and the MAPbBr3 film material The thickness of the film is in the range of 40nm‑100nm. The invention also discloses a preparation method of the organic-inorganic hybrid perovskite MAPbBr3 film material with gradient energy band structure.
Owner:BEIJING JIAOTONG UNIV
A method for preparing Si fixed-point substitution amorphous nanowire array
InactiveCN107089663BNoveltyStable structureHydrogen productionSilicon compoundsEthylenediamineSingle crystal
The invention relates to a method for preparing a fixed-point replaced amorphous nanowire array with Si. The method includes the steps that (1) zinc acetate and germanium oxide are added into a mixed solvent of water and ethylenediamine; (2) the mixture obtained from the step (1) is stirred with magnetic force to obtain a homogeneous solution; (3) pretreatment is conducted on a monocrystal Si piece, and then washing and drying are conducted; (4) the pretreated monocrystal Si piece is added in the homogeneous solution obtained from the step (2), and then a hydrothermal reaction is conducted; (5) the reaction product is cooled, washed and dried, and a final product is obtained on the Si piece. Compared with the prior art, the preparation method is novel, repeatability is good, the product property is stable, the product has a larger specific surface area and higher surface activity and light utilization efficiency, and the product can be widely applicable to many energy storage fields of photoelectric devices, solar cells, lithium-ion batteries, supercapacitors and the like.
Owner:TONGJI UNIV
A large-area horizontal depletion neutron detector and its preparation method
ActiveCN106257693BOvercome production challengesLow costFinal product manufacturePhotovoltaic energy generationHeterojunctionSemiconductor
The invention provides a large-area horizontal depletion type neutron detector and a preparation method thereof. The neutron detector comprises a substrate, an absorption layer, a CdS layer, a ZnO layer, a first electrode and a second electrode, wherein the absorption layer is located on the substrate and formed by CuInSe2, the CdS layer is located on the absorption layer and forms a heterojunction with the absorption layer, the CdS layer comprises a first contact hole enabling at least one part of the absorption layer to be exposed, the ZnO layer is located on the CdS layer and comprises a second contact hole which corresponds to the first contact hole and enables at least one part of the CdS layer to be exposed, the first electrode makes contact with the ZnO layer, the second electrode makes contact with the absorption layer through the first contact hole and the second contact hole, and the first electrode and the second electrode are spaced by a preset interval. The CuInSe2 / CdS semiconductor heterojunction layer is adopted for replacing SiC for preparing the radiation resistant semiconductor neutron detector; on the one hand, the cost can be lowered; on the other hand, the problem of manufacturing a large-area area array type detector can be solved.
Owner:SHENZHEN INST OF ADVANCED TECH
Method for doping Sb for growing Zn1-x MgxO crystal film
InactiveCN100537855CSimple methodDoping in real timePolycrystalline material growthFrom condensed vaporsHigh concentrationDopant
The invention discloses a process for doping growth P-type Zn1-xMgxO crystal film into stibium, which uses a pulsed laser deposition. A target material is ceramic target which is mixed sintered by pure ZnO, MgO and Sb2O3 power, wherein molar content x of Mg is less than 20 percent and more than 0, and the molar content y of stibium is less than 5 percent and more than 0. After being cleaned, a substrate is put into a growth chamber of a pulsed laser deposition device, the growth chamber is pumped to a vacuum, the substrate grows under pure oxygen whose pressure is 0.1-1Pa, and the growth temperature is 300-500 DEG C. The invention is simple, P-type doping concentration is capable of being controlled through adjusting the molar content of the stibium in the target material, because doping elements come from the target material, and high-concentration dopant is capable of being achieved. The P-type Zn1-xMgxO crystal film which is prepared by the process has excellent electrical properties, and the carrier concentration is 1015-1017 cm-3.
Owner:ZHEJIANG UNIV
Production method and device of heterogeneous deep groove PiN array and silicon-based reconfigurable stealth antenna
PendingCN112993051AImplement refactoringIncrease concentrationSemiconductor/solid-state device detailsSolid-state devicesPin arrayMaterials science
The invention relates to a production method and device of a heterogeneous deep groove PiN array and a silicon-based reconfigurable stealth antenna. The production method comprises the steps: selecting a GeOI substrate, and carrying out doping in the GeOI substrate to form a top GeSn region; etching the GeSn region on the top layer of the substrate to form an active region deep groove; planarizing the periphery of the active region and forming a P region and an N region by using in-situ doping; and forming a GeSn alloy lead on the substrate and connecting the GeSn alloy lead with the substrate so as to complete the production of the heterogeneous deep groove PiN array suitable for the silicon-based reconfigurable stealth antenna. According to the invention, the heterogeneous deep groove PiN array is produced by dynamically controlling the content of the Sn component in the top layer Ge and introducing the GeSn alloy lead.
Owner:ENG UNIV OF THE CHINESE PEOPLES ARMED POLICE FORCE
based on sb 2 the s 3 Stacked thin film solar cell with top cell and preparation method thereof
ActiveCN108281501BExpand the scope of absorptionEfficient use ofFinal product manufacturePhotovoltaic energy generationElectrical batteryEngineering
The invention discloses a laminated thin-film solar cell based on a Sb2S3 top battery and a preparation method of the laminated thin-film solar cell, and belongs to the field of thin-film solar cells.The laminated thin-film solar cell comprises a transparent conducting layer, the top battery, a middle composite layer, a bottom battery and a metal electrodes from top to bottom, wherein the metal electrodes are arranged at the lower ends of the transparent conducting layer and the bottom battery, the top battery is an Sb2S3 thin-film battery, and the bottom battery is a PbS quantum dot thin-film battery. The Sb2S3 thin-film battery and the PbS quantum dot thin-film battery are laminated to form the laminated battery, the forbidden bandwidth of the Sb2S3 thin-film battery is 1.73eV, and theforbidden bandwidth of the PbS quantum dot thin-film battery can be adjusted within the range of 1.03eV-1.45eV. The forbidden bandwidth of the prepared laminated battery is complementary, a spectrum absorption range can be widened, photoelectric conversion efficiency is greatly improved, and cost is reduced.
Owner:HUAZHONG UNIV OF SCI & TECH +1
p-Zn1-XMgXO crystal film and method for making same
InactiveCN1303650CImprove crystal qualityHigh dopingLaser detailsSemiconductor/solid-state device manufacturingDopantMetallurgy
Owner:ZHEJIANG UNIV
Production method of AlSb-GeSn-AlSb heterostructure solid-state plasma PiN diode and device thereof
PendingCN112993049AIncrease concentrationImprove distribution uniformitySemiconductor/solid-state device manufacturingSemiconductor devicesHeterojunctionReconfigurable antenna
The invention relates to the technical field of semiconductor materials and device manufacturing, and discloses a production method of an AlSb-GeSn-AlSb heterostructure solid-state plasma PiN diode and a device thereof. The production method comprises the following steps: selecting a GeOI substrate of a certain crystal orientation, and carrying out the doping in the GeOI substrate to form a top layer GeSn region; arranging a deep groove isolation region in the GeSn region on the top layer of the substrate; etching the GeSn region to form a P type groove and an N type groove; forming a P-type active region and an N-type active region in the P-type groove and the N-type groove by adopting ion implantation; and forming a GeSn alloy lead on the substrate. According to the production method and the device thereof, the distribution characteristics of solid-state plasma at the bottom and in the middle of an intrinsic region are improved so that the carrier concentration and the distribution uniformity are greatly improved, and the gain of the silicon-based reconfigurable antenna is increased.
Owner:ENG UNIV OF THE CHINESE PEOPLES ARMED POLICE FORCE
Method for preparing n-type An1-XMgXO crystal film
A process for preparing n-type Zn1-xMgxO crystal film by pulse laser deposition method includes providing high-purity ZnO, MgO and n-type dopant powder, proportional mixing, grinding, adding organic adhesive, die pressing, sintering to obtain the n-type doped Zn1-xMgxO ceramic target, and using laser to irradiate the target in high-purity oxygen to grow the n-type Zn1-xMgxO crystal film on clean substrate.
Owner:ZHEJIANG UNIV
P type doped ZnSxSe1-x nano material and preparation method thereof
InactiveCN102602984BBand gap adjustableMaterial nanotechnologyZinc sulfidesChemical vapor depositionP type doping
The invention discloses a P type doped ZnSxSe1-x nano material and a preparation method thereof. A doping source of P type doping is selected from one or several of AgS, CuS, NH3 and PH3. According to the P type doped ZnSxSe1-x nano material and the preparation method thereof, a chemical vapor deposition method is adopted, the P type doped ZnSxSe1-x nano material is synthesized by utilizing a gas-liquid-solid growth mechanism, and the ZnSxSe1-x nano material with different components can be obtained by adjusting the proportion of raw materials of ZnSe and ZnS; and the electric conductivity ofthe nano material obtained by preparation can be adjusted by adjusting the doping quantity, so that the characteristics of controllable components and adjustable electric conductivity of the P type doped ZnSxSe1-x nano material are realized.
Owner:HEFEI UNIV OF TECH
Preparation method of silicon-based CdTe-GeSn-CdTe heterogeneous transverse PiN diode and silicon-based CdTe-GeSn-CdTe heterogeneous transverse PiN diode device
PendingCN112993044AImprove mobilityImprove distribution uniformitySemiconductor/solid-state device manufacturingSemiconductor devicesCharge carrier mobilityIon implantation
The invention relates to a preparation method of a silicon-based CdTe-GeSn-CdTe heterogeneous transverse PiN diode and a device of the silicon-based CdTe-GeSn-CdTe heterogeneous transverse PiN diode. The preparation method comprises the following steps: selecting a GeOI substrate, and doping in the GeOI substrate to form a top GeSn region; arranging a deep groove isolating region in the GeSn region on the top layer of the substrate; etching the GeSn region to form a P-type groove and an N-type groove of which the depths are smaller than the thickness of the top layer GeSn region; forming a P-type active region and an N-type active region in the P-type groove and the N-type groove by adopting ion implantation; and forming a GeSn alloy lead on the substrate, so that the preparation of the silicon-based CdTe-GeSn-CdTe heterogeneous transverse PiN diode is completed. According to the diode disclosed by the invention, the carrier mobility and the distribution uniformity are greatly improved by introducing the top GeSn region, meanwhile, the carrier transport characteristic is greatly improved, and the microwave characteristic of the solid-state plasma PiN diode is remarkably improved.
Owner:ENG UNIV OF THE CHINESE PEOPLES ARMED POLICE FORCE
A palladium-doped carbon thin film material with photovoltaic effect
InactiveCN101807611BWith photovoltaic effectRich reservesFinal product manufacturePhotovoltaic energy generationCarbon filmPalladium atom
The invention provides a palladium-doped carbon film material with photovoltaic effect. A film with the thickness of 20-200nm is sputtered on a 0.5-1.0mm mono-crystalline silicon wafer to manufacture a palladium-doped carbon film / silicon dioxide / silicon material or palladium-doped carbon film / silicon heterogenous junction material, wherein the film with the thickness of 20-200nm is a carbon film with the doped palladium atom content of 0-5%. The material has photovoltaic effect, and can be used for manufacturing solar cells and photosensitive devices; and the manufactured solar cells have higher conversion efficiency, and have simple manufacture process and high finished product ratio.
Owner:CHINA UNIV OF PETROLEUM (EAST CHINA)
A method for preparing molybdenum sulfide two-dimensional material using mocvd equipment
ActiveCN110655111BImprove nucleation qualitySmall sizeChemical vapor deposition coatingMolybdenum sulfidesPhysical chemistrySulfidation
Owner:ZHEJIANG UNIV
Li-doped p-Zn1-xMgxO crystal film and method for preparing same
InactiveCN100406620CImprove stabilityGood repeatabilityFrom condensed vaporsSemiconductor devicesPhysical chemistryThin membrane
The invention discloses a Li doping p-Zn1-xMgxO transistor film, which is characterized by the following: molar content x of MgO is between 0 and 20 percent and y molar content of Li is between 0 and 2 percent; the carrier density of Li doping p-Zn1-xMgxO transistor film is 1015-1019cm-3; the film adopts pulse laser sedimenting method; the target material is ceramic target sintered by high-pure ZnO, MgO and Li2CO3 powder, wherein the MgO molar content x is between 0 and 20 percent; the Li2CO3 molar content y is between 0 and 1 percent, whose pressure is 0.1-50 Pa with growing temperature at 400-700 deg.c under high-oxygen environment; the doping density can be adjusted through controlling Li content in the target material.
Owner:ZHEJIANG UNIV
A passive flexible retinal prosthesis and its preparation method
ActiveCN110010766BSolve the problem of low photoelectric conversion efficiencyImprove stabilityMaterial nanotechnologyEye implantsSurface plasmon excitationSurface plasmon
The invention belongs to the technical field related to implantable bioelectronic devices, and discloses a passive flexible retinal prosthesis and a preparation method thereof. The retinal prosthesis includes a flexible base, a first package arranged on the flexible base layer and a functional layer disposed on the surface of the first encapsulation layer away from the flexible substrate, the functional layer includes a light absorbing layer, the composition material of the light absorbing layer is doped with silicon nanoparticles; the flexible substrate Or the functional layer is formed with a submicron microhole array structure. The invention utilizes the microporous structure with good light absorption ability and the surface plasmon excitation effect of silicon nanoparticles to improve the light absorption rate and photoelectric conversion efficiency, and has good flexibility and strong applicability.
Owner:HUAZHONG UNIV OF SCI & TECH
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