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Method for preparing n-type An1-XMgXO crystal film

A zn1-xmgxo, n-type technology is applied in the field of n-type doped Zn1-xMgxO crystal films and their preparation, which can solve the problems affecting the application of crystal films and achieve the effect of high doping concentration

Inactive Publication Date: 2006-02-08
ZHEJIANG UNIV
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  • Claims
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Problems solved by technology

However, only intrinsically undoped Zn 1-x Mg x O thin film, no n-type Zn yet 1-x Mg x O crystal thin films, for intrinsically undoped Zn 1-x Mg x The preparation methods of O thin films mainly include: metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), etc. 1-x Mg x The n-type doping technology of O crystal film has not been solved, which affects the Zn 1-x Mg x Application of O Crystal Thin Films in Optoelectronic Devices

Method used

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  • Method for preparing n-type An1-XMgXO crystal film

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Experimental program
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Embodiment

[0017] 1) Take ZnO, MgO and Al with a purity of 99.99% 2 o 3 powder, wherein the molar content of MgO is 20%, that is, the molar ratio of MgO:ZnO is 1:4, Al 2 o 3 The molar content is 0.1%. Then ZnO, MgO and Al 2 o 3 The powder is mixed and poured into an agate ball cup, and placed on a ball mill for ball milling. On the one hand, ZnO, MgO and Al can be 2 o 3 The powder is mixed evenly to ensure the uniformity of the prepared target. On the other hand, ZnO, MgO and Al 2 o 3 Powder refinement for subsequent ZnO, MgO and Al 2 o 3 Forming and sintering of mixed powders. After the ball milling, add the binder polyvinyl acetate, and press the powder into a disc with a thickness of 3mm and a diameter of 4cm; then sinter the pressed powder disc at 1000°C for 1 hour to form an organic bond. The agent is volatilized, and the Al-doped 2 o 3 Zn 0.8 Mg 0.2 O ceramic target.

[0018] 2) take the silicon chip as the substrate as an example, first clean the silicon chip wit...

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Abstract

A process for preparing n-type Zn1-xMgxO crystal film by pulse laser deposition method includes providing high-purity ZnO, MgO and n-type dopant powder, proportional mixing, grinding, adding organic adhesive, die pressing, sintering to obtain the n-type doped Zn1-xMgxO ceramic target, and using laser to irradiate the target in high-purity oxygen to grow the n-type Zn1-xMgxO crystal film on clean substrate.

Description

technical field [0001] The present invention relates to n-type doped Zn 1-x Mg x O crystal thin film and its preparation method. Background technique [0002] Zn 1-x Mg x O ternary alloy is a solid solution formed by ZnO and MgO according to a certain composition. In the application of ZnO-based light-emitting and optoelectronic devices, it is necessary to prepare p-Zn in order to improve the luminous efficiency of the device. 1-x Mg x O / ZnO / n-Zn 1-x Mg x O quantum well, superlattice structure, growth controllable n and p type Zn 1-x Mg x O crystal film. However, only intrinsically undoped Zn 1-x Mg x O thin film, no n-type Zn yet 1-x Mg x O crystal thin films, for intrinsically undoped Zn 1-x Mg x The preparation methods of O thin films mainly include: metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), etc. 1-x Mg x The n-type doping technology of O crystal film has not be...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/02C30B23/06
Inventor 黄靖云叶志镇张银珠赵炳辉
Owner ZHEJIANG UNIV
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