Li-doped p-Zn1-xMgxO crystal film and method for preparing same

A technology of p-zn1-xmgxo and crystal, which is applied in the field of Li-doped p-Zn1-xMgxO crystal film and its preparation, can solve the problem of deep acceptor energy level, low repeatability and stability of p-type conductance, Low solid solubility and other problems, to achieve the effect of high solid solubility, shallow acceptor energy level, good stability and repeatability

Inactive Publication Date: 2006-12-20
ZHEJIANG UNIV
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  • Abstract
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Problems solved by technology

However, there are still some problems in the doping of group V elements: such as low solid solubility of acceptors, deep acceptor energy levels, and low repeatability and stability of p-type conductance.

Method used

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  • Li-doped p-Zn1-xMgxO crystal film and method for preparing same
  • Li-doped p-Zn1-xMgxO crystal film and method for preparing same
  • Li-doped p-Zn1-xMgxO crystal film and method for preparing same

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Embodiment Construction

[0017] The following combination figure 1 , the present invention will be further illustrated by examples. Growth of p-Zn on glass substrate 1-x Mg x O crystal thin film, concrete steps are as follows:

[0018] 1) Sintering of ceramic targets Weigh high-purity ZnO, MgO and Li with a purity >99.99% 2 CO 3 powder, so that the molar ratio of MgO to ZnO is 1:9, Li 2 CO 3 The molar content is 0.4%. The weighed ZnO, MgO and Li 2 CO 3 The powder is mixed and poured into a ball mill jar equipped with agate balls, and milled on a ball mill for 20 hours. The purpose is to mix the raw materials evenly and refine them to a certain extent, so as to facilitate the forming and sintering of ceramic targets. Then the raw materials are separated and dried, and pre-sintered at 800 °C to make Li 2 CO 3 Decomposed into Li 2 O and CO 2 , and put CO 2 discharge. The calcined powder is ball-milled again, dried, then added with a binder for grinding, and pressed into shape. Put the mol...

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Abstract

The invention discloses a Li doping p-Zn1-xMgxO transistor film, which is characterized by the following: molar content x of MgO is between 0 and 20 percent and y molar content of Li is between 0 and 2 percent; the carrier density of Li doping p-Zn1-xMgxO transistor film is 1015-1019cm-3; the film adopts pulse laser sedimenting method; the target material is ceramic target sintered by high-pure ZnO, MgO and Li2CO3 powder, wherein the MgO molar content x is between 0 and 20 percent; the Li2CO3 molar content y is between 0 and 1 percent, whose pressure is 0.1-50 Pa with growing temperature at 400-700 deg.c under high-oxygen environment; the doping density can be adjusted through controlling Li content in the target material.

Description

technical field [0001] The present invention relates to Li-doped p-Zn 1-x Mg x O crystal thin film and its preparation method. Background technique [0002] Hexagonal Zn produced by doping an appropriate amount of MgO into ZnO 1-x Mg x O crystal thin film has the same crystal structure and similar lattice constant as ZnO, but its band gap is larger than that of ZnO, and the energy band of ZnO can be tailored according to the molar content of Mg. Therefore, Zn 1-x Mg x O thin film is the best barrier layer material of ZnO. In order to improve the light-emitting performance of optoelectronic devices, devices generally use p-n junction, heterojunction, superlattice and quantum well structures. If stable growth and controllable p-type Zn can be achieved 1-x Mg x O crystal film, not only can greatly improve the p-Zn 1-x Mg x The luminous efficiency of ZnO-based light-emitting diodes with O / n-ZnO heterogeneous p-n junctions as the basic structure opens up the possibilit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00H01L33/00
Inventor 叶志镇张银珠黄海辉曾昱嘉
Owner ZHEJIANG UNIV
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