Method for doping Sb for growing Zn1-x MgxO crystal film

A zn1-xmgxo, crystal technology, applied in the field of growth of p-type Zn1-xMgxO crystal thin films, can solve problems such as influence, and achieve the effect of simple method and high concentration doping

Inactive Publication Date: 2009-09-09
ZHEJIANG UNIV
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Problems solved by technology

[0003] At present, how to obtain p-type Zn with excellent properties 1-x Mg x The O crystal thin film has not been solved, which affects the Zn 1-x Mg x Application of O Crystal Thin Films in Optoelectronic Devices

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  • Method for doping Sb for growing Zn1-x MgxO crystal film

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Embodiment Construction

[0017] Combine the following figure 1 , the present invention will be further illustrated by examples.

[0018] Sb-doped growth of p-type Zn 1-x Mg x The method for O crystal thin film, step is as follows:

[0019] 1) Preparation of ceramic target Weigh ZnO, MgO and Sb with a purity of 99.99% 2 o 3 Powder, wherein the molar percentage of Mg is 5%, and the molar percentage of Sb is 2.96%. The weighed ZnO, MgO and Sb 2 o 3 The powder was poured into a ball mill jar with agate balls, and milled on a ball mill for 18 hours, in order to combine ZnO, MgO and Sb 2 o 3 The powder is well mixed and finely grained to some extent. Then the raw materials are separated and dried, added with a binder for grinding, and pressed into shape. Put the formed green body into the sintering furnace, discharge elements at low temperature (400°C) to volatilize the binder, and then heat up to 1200°C for 2 hours to obtain Sb-doped Zn 0.95 Mg 0.05 O ceramic target.

[0020] 2) The preparatio...

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Abstract

The invention discloses a process for doping growth P-type Zn1-xMgxO crystal film into stibium, which uses a pulsed laser deposition. A target material is ceramic target which is mixed sintered by pure ZnO, MgO and Sb2O3 power, wherein molar content x of Mg is less than 20 percent and more than 0, and the molar content y of stibium is less than 5 percent and more than 0. After being cleaned, a substrate is put into a growth chamber of a pulsed laser deposition device, the growth chamber is pumped to a vacuum, the substrate grows under pure oxygen whose pressure is 0.1-1Pa, and the growth temperature is 300-500 DEG C. The invention is simple, P-type doping concentration is capable of being controlled through adjusting the molar content of the stibium in the target material, because doping elements come from the target material, and high-concentration dopant is capable of being achieved. The P-type Zn1-xMgxO crystal film which is prepared by the process has excellent electrical properties, and the carrier concentration is 1015-1017 cm-3.

Description

technical field [0001] The present invention relates to p-type Zn 1-x Mg x The growth method of O crystal film, especially Sb-doped growth of p-type Zn 1-x Mg x O crystal thin film method. Background technique [0002] Doping an appropriate amount of MgO in ZnO and replacing the position of Zn with Mg can effectively adjust the band gap of ZnO. Due to Mg 2+ with Zn 2+ The ionic radius of ZnO is very close, so the substitution of Mg for Zn will not cause a large change in the lattice constant, and when the Mg content is not too high, the incorporation of Mg will not change the crystal structure of ZnO. Therefore, Zn 1-x Mg x O crystal thin film is an ideal barrier layer material of ZnO. If it is possible to prepare controllable p-type Zn 1-x Mg x O crystal thin film can not only improve the luminous efficiency of ZnO-based devices, but also is expected to open up the application of ZnO-based laser diodes. [0003] At present, how to obtain p-type Zn with excellent...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/22C30B23/02
Inventor 叶志镇潘新花林均铭朱丽萍赵炳辉
Owner ZHEJIANG UNIV
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