Method for doping Sb for growing Zn1-x MgxO crystal film

A zn1-xmgxo, crystal technology, applied in the field of growth of p-type Zn1-xMgxO crystal thin films, can solve problems such as influence, and achieve the effect of simple method and high concentration doping
CN100537855CInactive Publication Date: 2009-09-09ZHEJIANG UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
ZHEJIANG UNIV
Publication Date
2009-09-09
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a process for doping growth P-type Zn1-xMgxO crystal film into stibium, which uses a pulsed laser deposition. A target material is ceramic target which is mixed sintered by pure ZnO, MgO and Sb2O3 power, wherein molar content x of Mg is less than 20 percent and more than 0, and the molar content y of stibium is less than 5 percent and more than 0. After being cleaned, a substrate is put into a growth chamber of a pulsed laser deposition device, the growth chamber is pumped to a vacuum, the substrate grows under pure oxygen whose pressure is 0.1-1Pa, and the growth temperature is 300-500 DEG C. The invention is simple, P-type doping concentration is capable of being controlled through adjusting the molar content of the stibium in the target material, because doping elements come from the target material, and high-concentration dopant is capable of being achieved. The P-type Zn1-xMgxO crystal film which is prepared by the process has excellent electrical properties, and the carrier concentration is 1015-1017 cm-3.
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Description

technical field

[0001] The present invention relates to p-type Zn 1-x Mg x The growth method of O crystal film, especially Sb-doped growth of p-type Zn 1-x Mg x O crystal thin film method. Background technique

[0002] Doping an appropriate amount of MgO in ZnO and replacing the position of Zn with Mg can effectively adjust the band gap of ZnO. Due to Mg 2+ with Zn 2+ The ionic radius of ZnO is very close, so the substitution of Mg for Zn will not cause a large change in the lattice constant, and when the Mg content is not too high, the incorporation of Mg will not change the crystal structure of ZnO. Therefore, Zn 1-x Mg x O crystal thin film is an ideal barrier layer material of ZnO. If it is possible to prepare controllable p-type Zn 1-x Mg x O crystal thin film can not only improve the luminous efficiency of ZnO-based devices, but also is expected to open up the application of ZnO-based laser diodes.

[0003] At present, how to obtain p-type Zn with excellent...

Claims

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