P-zn1-xmgxo crystal film and method for making same

A technology of p-zn1-xmgxo and thin film, which is applied in the field of p-type doped Zn1-xMgxO crystal thin film and its preparation, can solve the problems affecting the application of ZnO-based crystal thin film, and achieve easy control of deposition parameters, low growth temperature, good film quality

Inactive Publication Date: 2004-11-03
ZHEJIANG UNIV
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  • Abstract
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Problems solved by technology

However, currently there is only non-doped Zn in the world 1-x Mg x Report of O crystal thin films without n-type and p-type Zn 1-x Mg x O crystal thin film report
The p-type doping of ZnO-based thin films is a worldwide problem. If this doping technology is not solved, it will greatly affect the application of ZnO-based crystal thin films in optoelectronic devices.

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  • P-zn1-xmgxo crystal film and method for making same

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Embodiment

[0019] Example: with Al 2 o 3 is the donor dopant, N 2 O is the acceptor doping source, and p-Zn is grown on the silicon wafer as the substrate 1-x Mg x O film. Specific steps are as follows:

[0020] 1) Sintering of ceramic targets: Weigh high-purity ZnO, MgO and Al with a purity >99.99% 2 o 3 powder, so that the molar ratio of MgO to ZnO is 1:4, Al 2 o 3 The molar content is 0.5%. The weighed ZnO, MgO and Al 2 o 3 The powder is mixed and poured into a ball mill jar equipped with agate balls, and milled on a ball mill for 20 hours. The purpose is to mix the raw materials evenly and refine them to a certain extent, so as to facilitate the forming and sintering of ceramic targets. Then the raw materials are separated and dried, added with a binder for grinding, and pressed into shape. Finally, put the formed embryo into the sintering furnace, discharge elements at low temperature (200-400°C) to volatilize the binder, and then heat up to 800-1200°C for 3 hours to obt...

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Abstract

This invented P-Zn1-xMgxO crystal film is one doped by one or several in B, Al, Ga and In as the donor and one or several of N, P, AS gases as the acceptor, the molar content of X is larger than 0 smaller than 40%, and the doped density is 1015~1019cm[-3]. The film is prepared by pulse laser deposition, the target is a ceramic one sintered with pure ZnO, MgO and donor doping agent powder, among which, the molar content of MgO is larger than 0 but smaller than 40%, that of the donor doping agent is larger than 0 but smaller than 3%, the grown temperature is 400~700deg.C, the grown atmosphere is a mixed gas containing the acceptor activated by plasma and pure O2, the doped density can be controlled by adjusting different intrinsic stand-off ratios of the input gas with acceptor and O2 and molar content of the donor doping agents in the target material and the successive annealing temperature.

Description

technical field [0001] The present invention relates to p-type doped Zn 1-x Mg x O crystal thin film and its preparation method. Background technique [0002] When the molar content of Mg does not exceed 33at%, Zn 1-x Mg x The O ternary alloy thin film has the same crystal structure and similar lattice constant as the ZnO thin film, but the incorporation of Mg broadens the forbidden band of ZnO, which can realize the tailoring of the forbidden band width of ZnO. In order to improve the luminous efficiency of ZnO-based optoelectronic devices, p-Zn 1-x Mg x O / ZnO / n-Zn 1-x Mg x The heterojunction, quantum well and superlattice structure of O not only require the lattice constant of the barrier layer to match the potential well, but also need to grow stable and controllable n-type and p-type Zn 1-x Mg x O crystal film. However, currently there is only non-doped Zn in the world 1-x Mg x Report of O crystal thin films without n-type and p-type Zn 1-x Mg x O crystal t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/48H01L21/20H01L21/24H01L33/00H01S5/00
Inventor 叶志镇张银珠黄靖云
Owner ZHEJIANG UNIV
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