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Laminated thin-film solar cell based on Sb2S3 top battery and preparation method of laminated thin-film solar cell

A solar cell and top cell technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of complex process, inability to fully utilize the solar spectrum, and high cost, achieve high spectral absorption coefficient, improve photoelectric conversion efficiency, and improve efficiency. Effect

Active Publication Date: 2018-07-13
HUAZHONG UNIV OF SCI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For the above defects or improvement needs of the prior art, the present invention provides a Sb-based 2 S 3 The stacked thin film solar cell of the top cell and its preparation method, thereby solving the technical problems of the existing technology that the solar spectrum cannot be fully utilized, the cost is high, and the process is complicated

Method used

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  • Laminated thin-film solar cell based on Sb2S3 top battery and preparation method of laminated thin-film solar cell
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  • Laminated thin-film solar cell based on Sb2S3 top battery and preparation method of laminated thin-film solar cell

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Effect test

Embodiment 1

[0037] Material preparation 1. Synthesis of PbS quantum dots with different band gaps:

[0038] 1) Put 2.25g of PbO, 7.5mL of oleic acid, and 20mL of 1-octadecene (ODE) into a 50mL round-bottomed three-necked flask, seal it, heat and stir at 100°C and vacuumize for 16 hours until the PbO in the reaction flask Complete reaction forms a uniform and transparent solution to obtain a lead precursor.

[0039] 2) Take 700 μL of hexamethyldisilathane (TMS) and dissolve it in 10 mL of ODE pumped with water and oxygen as a sulfur source for use. Introduce an appropriate amount of nitrogen into the obtained lead precursor, adjust the temperature to between 90°C and 150°C, quickly inject sulfur source into the lead precursor solution, turn off the heating device, and naturally cool to room temperature to obtain a mixed solution .

[0040] 3) Take out the mixed solution and add an appropriate amount of acetone, put it into a centrifuge and centrifuge to precipitate, then remove the super...

Embodiment 2

[0060] (1) Use detergent, deionized water, isopropanol, and absolute ethanol to ultrasonically clean the ITO transparent conductive glass with a resistance of 5Ω and a thickness of 100nm for 30 minutes each, and then dry it with nitrogen.

[0061] (2) A CdS buffer layer with a thickness of 40nm was deposited on the surface of ITO by chemical water bath deposition method, the temperature of the water bath was 78°C, and the deposition time was 16.5 minutes.

[0062] (3) Evaporate Sb on the CdS buffer layer by using the near-space rapid thermal evaporation method 2 S 3 Thin film absorber, 0.4gSb 2 S 3 Sprinkle the powder evenly on the square glass sheet with a side length of 2.5 cm, and the sample of the same size is inverted at a distance Sb 2 S 3 1 cm above the uniform powder, cover with a graphite block, use infrared heating, use a crystallization temperature of 300 ° C and an evaporation temperature of 550 ° C, and the evaporation time is 20 seconds, and deposit Sb with a...

Embodiment 3

[0070] (1) Use detergent, deionized water, isopropanol, and absolute ethanol to ultrasonically clean the ITO transparent conductive glass with a resistance of 60Ω and a thickness of 250nm for 30 minutes each, and then dry it with nitrogen.

[0071] (2) A CdS buffer layer with a thickness of 100 nm was deposited on the surface of ITO by chemical water bath deposition method, the temperature of the water bath was 78° C., and the deposition time was 16.5 minutes.

[0072] (3) Evaporate Sb on the CdS buffer layer by using the near-space rapid thermal evaporation method 2 S 3 Thin film absorber, 0.4gSb 2 S 3 Sprinkle the powder evenly on the square glass sheet with a side length of 2.5 cm, and the sample of the same size is inverted at a distance Sb 2 S 3 1 cm above the uniform powder, cover with a graphite block, use infrared heating, use 300 ° C crystallization temperature and 550 ° C evaporation temperature, evaporation time 20 seconds, deposit Sb with a thickness of 350 nm ...

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Abstract

The invention discloses a laminated thin-film solar cell based on a Sb2S3 top battery and a preparation method of the laminated thin-film solar cell, and belongs to the field of thin-film solar cells.The laminated thin-film solar cell comprises a transparent conducting layer, the top battery, a middle composite layer, a bottom battery and a metal electrodes from top to bottom, wherein the metal electrodes are arranged at the lower ends of the transparent conducting layer and the bottom battery, the top battery is an Sb2S3 thin-film battery, and the bottom battery is a PbS quantum dot thin-film battery. The Sb2S3 thin-film battery and the PbS quantum dot thin-film battery are laminated to form the laminated battery, the forbidden bandwidth of the Sb2S3 thin-film battery is 1.73eV, and theforbidden bandwidth of the PbS quantum dot thin-film battery can be adjusted within the range of 1.03eV-1.45eV. The forbidden bandwidth of the prepared laminated battery is complementary, a spectrum absorption range can be widened, photoelectric conversion efficiency is greatly improved, and cost is reduced.

Description

technical field [0001] The invention belongs to the field of thin film solar cells, more specifically, relates to a Sb-based 2 S 3 A tandem thin film solar cell with a top cell and a method for preparing the same. Background technique [0002] With the rapid development of human society, the demand for energy will become larger and larger. The reserves of fossil energy are limited and the pollution is serious. The development of new energy has become particularly urgent. As a clean and renewable energy source, solar energy is expected to improve energy problems. Solar cells development is particularly important. [0003] The energy distribution range of the solar spectrum is wide, and the absorption spectrum range of a single material is limited. Only light with energy higher than the band gap will be absorbed, and photons with lower energy cannot be absorbed, and the entire solar spectrum cannot be fully utilized. Therefore, The utilization efficiency of the solar spectr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0445H01L31/18
CPCH01L31/0445H01L31/18Y02E10/50Y02P70/50
Inventor 宋海胜邓辉杨晓坤
Owner HUAZHONG UNIV OF SCI & TECH
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