A large-area horizontal depletion neutron detector and its preparation method

Abstract

The invention provides a large-area horizontal depletion type neutron detector and a preparation method thereof. The neutron detector comprises a substrate, an absorption layer, a CdS layer, a ZnO layer, a first electrode and a second electrode, wherein the absorption layer is located on the substrate and formed by CuInSe2, the CdS layer is located on the absorption layer and forms a heterojunction with the absorption layer, the CdS layer comprises a first contact hole enabling at least one part of the absorption layer to be exposed, the ZnO layer is located on the CdS layer and comprises a second contact hole which corresponds to the first contact hole and enables at least one part of the CdS layer to be exposed, the first electrode makes contact with the ZnO layer, the second electrode makes contact with the absorption layer through the first contact hole and the second contact hole, and the first electrode and the second electrode are spaced by a preset interval. The CuInSe2 / CdS semiconductor heterojunction layer is adopted for replacing SiC for preparing the radiation resistant semiconductor neutron detector; on the one hand, the cost can be lowered; on the other hand, the problem of manufacturing a large-area area array type detector can be solved.

Description

technical field [0001] The invention belongs to the technical field of area array nuclear detectors, and in particular relates to a large-area horizontal depletion neutron detector and a preparation method of the neutron detector. Background technique [0002] Neutron detection is of great significance in many fields such as nuclear medicine and clinical diagnosis, local radiation field measurement, space physics, aerospace and industrial applications, nuclear power plant safety monitoring system, and detection of hidden nuclear materials. With the development of neutron imaging detection and diagnosis technology, the use of helium ( 3 The traditional detectors of He) gas counter tubes can no longer meet the needs, especially for the detection of high sensitivity of position. Develop a semiconductor detector unit that is small, can be integrated, can still work normally under low bias voltage, has high sensitive spatial resolution, high detection efficiency, and is more res...

AI Technical Summary

Problems solved by technology

However, Si devices have the following shortcomings that are difficult to overcome: a) they are sensitive to radiation damage, and after being irradiated by particles of a certain intensity (fast neutron fluence is 10 9 / cm 2 ) Leakage current, resolution and other performance gradually deteriorate, or even completely fail (fast neutron fluence is 10 12 / cm 2 ); b) Si devices generally work at room temperature or low temperature, and are not suitable for measurement at high temperatures (>500°C); c) Si devices are easily broken down, and the working bias is generally less than 200V

Diamond thin film devices are also resistant to radiation, but the fabrication of transistors is very difficult and expensive

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