P type doped ZnSxSe1-x nano material and preparation method thereof

A technology of nanomaterials and doping sources, applied in the field of P-type doped ZnSxSe1-x nanomaterials and its preparation, can solve problems such as difficulties and achieve the effect of adjustable band gap

Inactive Publication Date: 2012-07-25
HEFEI UNIV OF TECH
View PDF3 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current synthesis of ternary ZnS based on ZnSe and ZnS x Se 1-x Nanomaterials, especially P-type ZnS with controllable composition x Se 1-x There are still great difficulties in the synthesis of nanomaterials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • P type doped ZnSxSe1-x nano material and preparation method thereof
  • P type doped ZnSxSe1-x nano material and preparation method thereof
  • P type doped ZnSxSe1-x nano material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] 1. Weigh 0.14g of ZnSe powder with a purity of ≥99.99% and 0.097g of ZnS powder with a purity of ≥99.99%, respectively, grind and mix them and add them to the porcelain boat.

[0038] 2. A gold-evaporated silicon wafer with a gold layer thickness of 10 nm was prepared by using an electron beam evaporation process according to a conventional method, and the gold-evaporated silicon wafer was used as a deposition substrate.

[0039] 3. Put the porcelain boat and the deposition substrate into a quartz tube in sequence, and then put the quartz tube into the horizontal tube furnace. The specific positions are: the porcelain boat is located at the heating source, and the deposition substrate is located 13 cm downstream of the heating source. After the quartz tube is sent in, the furnace body is sealed and vacuumized, and after the vacuumization is completed, 85 sccm of argon-hydrogen mixed gas (hydrogen accounts for 5vt%) and 15 sccm of NH are introduced into the furnace body ...

Embodiment 2

[0041] The preparation method of this embodiment is the same as that of Example 1, except that the gas flow rate of the argon-hydrogen mixture is 70 sccm, and the NH 3 The gas flow rate is 30sccm to obtain P-type doped ZnS 0.5 Se 0.5 nanomaterials.

Embodiment 3

[0043] The preparation method of this embodiment is the same as that of Example 1, except that the ZnSe powder weighs 0.196g, and the ZnS powder weighs 0.058g to obtain P-type doped ZnS 0.3 Se 0.7 nanomaterials.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
electron work functionaaaaaaaaaa
lengthaaaaaaaaaa
Login to view more

Abstract

The invention discloses a P type doped ZnSxSe1-x nano material and a preparation method thereof. A doping source of P type doping is selected from one or several of AgS, CuS, NH3 and PH3. According to the P type doped ZnSxSe1-x nano material and the preparation method thereof, a chemical vapor deposition method is adopted, the P type doped ZnSxSe1-x nano material is synthesized by utilizing a gas-liquid-solid growth mechanism, and the ZnSxSe1-x nano material with different components can be obtained by adjusting the proportion of raw materials of ZnSe and ZnS; and the electric conductivity ofthe nano material obtained by preparation can be adjusted by adjusting the doping quantity, so that the characteristics of controllable components and adjustable electric conductivity of the P type doped ZnSxSe1-x nano material are realized.

Description

1. Technical field [0001] The invention relates to a preparation method of a ternary composite nanomaterial, specifically a P-type doped ZnS x Se 1-x Nanomaterials and their preparation methods. 2. Background technology [0002] ZnS x Se 1-x It is a wide bandgap direct bandgap semiconductor with many excellent properties and may be widely used in a wide range of fields such as optoelectronic devices, sensitive sensors, stealth technology, catalysis, and information storage. ZnS x Se 1-x The band gap of a material is related to its composition. can be controlled by ZnS x Se 1-x The element ratio of the material, thus realizing the adjustment of ZnS x Se 1-x The band gap of the material. to ZnS x Se 1-x P-type doping can significantly improve ZnS x Se 1-x The electrical properties of the material, and the ZnS can be adjusted with the change of doping amount x Se 1-x The conductivity of the material. However, the current synthesis of ternary ZnS based on ZnSe ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/08C01G19/04C01G19/00B82Y30/00B82Y40/00
Inventor 王莉赵兴志王祥安卢敏罗林宝揭建胜李强朱志峰张彦胡继刚
Owner HEFEI UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap