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Inorganic phase change photoresist and photolithographic technology based on inorganic phase change photoresist

An inorganic phase change and photolithography technology, which is applied in microlithography exposure equipment, photolithographic process exposure devices, photosensitive materials for optomechanical equipment, etc. Low etching and other problems, to achieve the effect of short production cycle, simple and convenient preparation method, and high yield

Inactive Publication Date: 2014-05-21
SUZHOU HUAWEINA NANO SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the etching resistance of the above-mentioned materials to the silicide substrate is relatively low, which cannot meet the practical requirements.

Method used

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  • Inorganic phase change photoresist and photolithographic technology based on inorganic phase change photoresist
  • Inorganic phase change photoresist and photolithographic technology based on inorganic phase change photoresist
  • Inorganic phase change photoresist and photolithographic technology based on inorganic phase change photoresist

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] refer to figure 1 , is a flowchart of photolithography process steps.

[0033] Step a: Select silicon dioxide (SiO 2 ) as the substrate 1, using acetone, alcohol, and deionized water as cleaning agents, and ultrasonically cleaned for 10 minutes each in sequence. After cleaning, take it out and dry it with nitrogen gas, then dry it in a vacuum oven at 120°C for 1 hour, and take it out after cooling.

[0034] Step b: in the silicon dioxide (SiO 2 ) on the substrate 1 by magnetron sputtering to deposit a layer of high-etch-resistant amorphous film 2, that is, Ge 2 Sb 2(1-x) sn 2x Te 5 (0-5 Pa, the sputtering power is 50W, the argon (Ar) flow rate is 25sccm, the deposition pressure is 0.1Pa, the temperature of the substrate 1 is room temperature, the deposition time is 250s, and the obtained GSST thin film 2 has a thickness of 60nm. The surface morphology of the sample is as figure 2 As shown, very smooth with no large particles. image 3 It is the spectral absorpt...

Embodiment 2

[0040] Step a: Single crystal silicon (Si) is selected as the substrate 1, and other operations such as cleaning, drying, drying, and cooling are the same as step a of Embodiment 1.

[0041] Step b: On the monocrystalline silicon (Si) substrate 1 treated in the above step a, magnetron sputtering is used to deposit a layer of highly etch-resistant amorphous film 2, that is, Ge 2 Sb 2(1-x0 sn 2x Te 5 (0<x<0.3) amorphous film, hereinafter referred to as GSST film. The target material, deposition conditions and operation steps are the same as step b of Example 1.

[0042] Step c: Use laser 3 to write directly on the partial area of ​​the thin film sample obtained in the above steps. The energy density and operation steps of laser 3 are the same as step c of Example 1.

[0043] Step d: put the GSST sample with micro / nano-scale pattern structure obtained in the above step c into a developing solution for development, and the developing solution and operation steps are the same a...

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Abstract

The invention discloses an inorganic phase change photoresist which is a germanium-stibium-tin-tellurium compound, wherein the general formula of the inorganic phase change photoresist is Ge2Sb2(1-x)Sn2xTe5, and x is larger than 0 and less than 0.3. The inorganic phase change photoresist is high in etching resistance ratio to a monocrystalline silicon piece and a silicon dioxide slice; a pattern with a crystalline state can be formed on the photoresist through direct writing or exposure by laser; furthermore, the photoresist has a negative photoresist characteristic in an acidic solution. According to a photolithographic technology based on the inorganic phase change photoresist, the preparation method is simple and convenient and has a pollution-free effect; furthermore, a special light environment needed by an organic photoresist is not needed, and laser with a specific wavelength is not used; the photolithographic technology can be implemented in a non-vacuum or vacuum environment; the advantages of short production period, low cost, high yield, simple and controllable technology, easiness in implementation of industrial production and the like are reflected.

Description

technical field [0001] The invention relates to an inorganic phase-change photoresist and a photolithography process based on the inorganic phase-change photoresist. Background technique [0002] Photolithography is currently the mainstream process widely used in semiconductors, microelectronics and nano-processing, and photoresist is the most important material to realize this process. Its main function is to obtain the pattern of the mask through exposure and transfer it to The base material goes up. The photoresists currently used are mainly organic material photoresists. [0003] Organic material photoresists are only sensitive to light of a specific wavelength, and each time a wavelength of light is replaced, a lot of manpower and material resources are required to develop a matching photoresist. However, not all organic photoresists are available for any wavelength, thus greatly limiting the wavelengths of lasers used in lithography. In addition, with the continuous...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/20
Inventor 刘前
Owner SUZHOU HUAWEINA NANO SCI & TECH
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