Method for preparing large-area single-layer and multi-layer gallium telluride materials by alternating reactants

A gallium telluride and reactant technology, applied in the field of new material preparation, can solve problems such as unfavorable large-area production, low preparation efficiency, difficult to control the number of layers, etc., and achieve large atomic mass, high preparation efficiency, and precise and controllable growth conditions. Effect

Inactive Publication Date: 2021-02-09
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the preparation method of mechanical exfoliation method is simple and the obtained samples have few defects, the preparation efficiency is low, the number of layers is difficult to control, and it is not conducive to large-scale production.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] Place a clean silicon substrate of 1 square centimeter in the deposition reaction chamber, control the reaction temperature to 800 degrees Celsius, and the reaction pressure to 0 Torr; set the flow rate of argon gas to 800 cubic centimeters per second, and alternately inject the carrier gas into the reaction chamber Trimethylgallium and diethyltellurium, the interval between trimethylgallium and diethyltellurium was 3 minutes, and the interval between diethyltellurium and trimethylgallium was 1 second, and a total of 200 cycles were implanted on the substrate. A single layer of gallium telluride is obtained by deposition.

Embodiment 2

[0013] Place a 49 square centimeter clean silicon wafer with a silicon dioxide film in the deposition reaction chamber, control the reaction temperature to 100 degrees Celsius, and the reaction pressure to 760 torr; Gallium isopropoxide and di-tert-butyl tellurium are alternately injected in the inner cycle, the interval between trimethylgallium and di-tert-butyl tellurium is 1 minute, and the interval between di-tert-butyl tellurium and trimethyl gallium is 10 minutes, and a total of 500 cycle, a multi-layer gallium telluride was deposited.

Embodiment 3

[0015] Place 100 square centimeters of clean quartz in the deposition reaction chamber, control the reaction temperature to 500 degrees Celsius, and the reaction pressure to 200 Torr; set the flow rate of nitrogen gas to 1 cubic centimeter per second, and alternately inject elemental gallium and Diethyl tellurium, the interval between elemental gallium and diethyltellurium is 1 minute, and the interval between diethyltellurium and elemental gallium is 1 minute. A total of 3000 cycles are injected, and single-layer and multi-layer gallium telluride are deposited.

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PUM

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Abstract

The invention discloses a method for preparing large-area single-layer and multi-layer gallium telluride materials by alternating reactants. According to the method, one or more gallium-containing compound or metal gallium simple substance and one or more tellurium-containing compound are alternately injected for deposition reaction, and the number of layers and the area of growth of the gallium telluride materials are controlled by controlling the reaction temperature and the reaction cycle index, so that the high-quality large-area layered gallium telluride materials are obtained. The methodhas the advantages that the growth condition is accurate and controllable, operation is convenient and easy, the preparation efficiency is high, and the large-area gallium telluride materials can bestably prepared. The gallium telluride material has large atomic mass and proper band gap, and has high application value in the fields of field effect transistors, optoelectronic devices, radiation detectors, solar cells and the like.

Description

technical field [0001] The invention belongs to the field of novel material preparation, relates to nanometer material preparation technology, and specifically refers to a method for preparing large-area single-layer and multi-layer gallium telluride materials by alternately injecting reactants. Background technique [0002] Due to the quantum confinement effect in the thickness direction of the atomic layer, two-dimensional materials exhibit excellent optical, mechanical, thermal, magnetic and other properties, and thus have attracted extensive attention from researchers. At present, graphene, the most representative two-dimensional material, has been used in optoelectronic devices, microelectronics, and energy fields, but its zero-band gap and semi-metallic properties have seriously affected its application. Therefore, in recent years, two-dimensional gallium group materials have gradually attracted the attention of researchers. Compared with graphene, it is still difficu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/52C01B19/04
CPCC23C16/305C23C16/52C01B19/007
Inventor 杨艳陈鑫孙艳戴宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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