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Uniform flake CuInS2 nanometer crystal preparation method

A technology of nanocrystals and cuins2, which is applied in nanotechnology, nano-optics, nanotechnology, etc., can solve the problems of serious agglomeration, poor uniformity and dispersion of nanoscale crystals, performance impact, etc., and achieve good light absorption performance and wide band gap Appropriate and improve the effect of reunion phenomenon

Inactive Publication Date: 2013-02-27
JIANGSU UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The study found that the nanoscale crystals prepared by the solvothermal method had poor uniformity and dispersion, serious agglomeration, and their properties were seriously affected.

Method used

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  • Uniform flake CuInS2 nanometer crystal preparation method
  • Uniform flake CuInS2 nanometer crystal preparation method
  • Uniform flake CuInS2 nanometer crystal preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] 1) Weigh 0.3488g CuCl with an analytical balance 2 2H 2 O, 0.6000g InCl 3 4H 2 O, 0.3894g CH 4 N 2 S, successively placed in 40ml N,N-dimethylformamide, stirred to fully dissolve it, and obtained a yellow clear solution. where n(CuCl 2 2H 2 O): n(InCl 3 4H 2 O): n(CH 4 N 2 S)=1:1:2.5.

[0032] 2) Measure 40ml of ethylene glycol and slowly pour it into the solution in step 1), stir to disperse it evenly, and obtain a colorless and clear solution.

[0033] 3) Mix 0.05% oxalic acid of the total mass of the solution into the step 2).

[0034] 4) The solution in step 3) was transferred into a polytetrafluoroethylene-lined autoclave with a volume of 100 mL and then sealed. After reacting at 190° C. for 12 hours, it was naturally cooled to room temperature.

[0035] 5) Centrifuge the reaction feed liquid in step 4) in an electric centrifuge for 15 minutes at a speed of 3000 r / min, then pour out the upper clear layer, and wash it several times with absolute ethanol...

Embodiment 2

[0037] 1) Weigh 0.3488g CuCl with an analytical balance 2 2H 2 O, 0.6000g InCl 3 4H 2 O, 0.3894g CH 4 N 2 S, successively placed in 40ml N,N-dimethylformamide, stirred to fully dissolve it, and obtained a yellow clear solution. where n(CuCl 2 2H 2 O): n(InCl 3 4H 2 O): n(CH 4 N 2 S)=1:1:2.5.

[0038] 2) Measure 40ml of ethylene glycol and slowly pour it into the solution in step 1), stir to disperse it evenly, and obtain a colorless and clear solution.

[0039] 3) Mix 0.5% oxalic acid of the total mass of the solution into the step 2).

[0040] 4) The solution in step 3) was transferred into a polytetrafluoroethylene-lined autoclave with a volume of 100 mL and then sealed. After reacting at 190° C. for 12 hours, it was naturally cooled to room temperature.

[0041] 5) Centrifuge the reaction feed liquid in step 4) in an electric centrifuge for 15 minutes at a speed of 3000 r / min, then pour out the upper clear layer, and wash it several times with absolute ethanol ...

Embodiment 3

[0043] 1) Weigh 0.3488g CuCl with an analytical balance 2 2H 2 O, 0.6000g InCl 3 4H 2 O, 0.3894g CH 4 N 2 S, successively placed in 40ml N,N-dimethylformamide, stirred to fully dissolve it, and obtained a yellow clear solution. where n(CuCl 2 2H 2O): n(InCl 3 4H 2 O): n(CH 4 N 2 S)=1:1:2.5.

[0044] 2) Measure 40ml of ethylene glycol and slowly pour it into the solution in step 1), stir to disperse it evenly, and obtain a colorless and clear solution.

[0045] 3) Mix and dissolve 1% oxalic acid of the total mass in step 2).

[0046] 4) The solution in step 3) was transferred into a polytetrafluoroethylene-lined autoclave with a volume of 100 mL and then sealed. After reacting at 190° C. for 12 hours, it was naturally cooled to room temperature.

[0047] 5) Centrifuge the reaction feed liquid in step 4) in an electric centrifuge for 15 minutes at a speed of 3000 r / min, then pour out the upper clear layer, and wash it several times with absolute ethanol and deionize...

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Abstract

The present invention discloses a uniform flake CuInS2 nanometer crystal preparation method, which comprises the following steps: (1) sequentially adding CuCl2.2H2O, InCl3.4H2O and CH4N2S to an organic solvent to mix, stirring to completely dissolve, and then adding a weak reduction agent to uniformly mix, wherein the weak reduction agent is oxalic acid, citric acid or ascorbic acid; (2) transferring the mixture obtained from the step (1) to a pressure kettle to seal, carrying out a constant temperature reaction for 12 hours, and naturally cooling to a room temperature after completing the reaction; and (3) carrying out centrifugation, washing and drying on the product after the reaction in the step (2) to obtain the finished product. According to the present invention, a binary mixing solvent is adopted to replace the traditional single organic solvent, and a weak reduction agent is added to a reaction system after mixing so as to improve product agglomeration and obtain a nanometer photovoltaic material with characteristics of uniform nanometer flake structure, high relative solid yield, excellent light absorption property and suitable band gap width.

Description

technical field [0001] The invention belongs to the field of photovoltaic materials, and relates to a method for synthesizing a class of ternary compound semiconductor nanopowder, in particular to a uniform flaky CuInS 2 Preparation methods of nanocrystals. Background technique [0002] Environmental pollution and energy shortage are two basic problems in today's society. The development and research of environmentally friendly renewable energy has become an important issue that human society needs to solve urgently. Among them, solar energy has become a new energy source that countries around the world focus on because of its advantages such as abundant reserves, safety, cleanness, regeneration, and no negative impact on the environment. Therefore, it is imminent to search for light-absorbing materials with excellent performance and to manufacture solar cells with high conversion efficiency. [0003] copper indium sulfide (CuInS 2 ) is a class of direct bandgap semicondu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00B82Y20/00
Inventor 高延敏赵琴冯清
Owner JIANGSU UNIV OF SCI & TECH
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