95results about How to "High light absorption coefficient" patented technology

The invention discloses a calculation method for improving the photocatalytic properties of the ZnO (0001) surface through Fe atom doping and adsorption. The method includes the steps of constructingthe primitive cells of ZnO body material in MS software, optimizing the structure, and constructing ZnO (0001) surface supercells and doping and adsorption models of Fe atoms at different loci on thepure ZnO (0001) surface; conducting structural optimization and GGA+U method calculation on the surface, selecting the energy band structure, the state density, the optical properties and the accuracycorresponding separately, and conducting calculation on each model; analyzing each model through a CASTEP module, obtaining the formation energy, optical property constant and work function of the ZnO (0001) surface doped and adsorbed by the Fe atoms, and obtaining the electronic structure and the optical property corresponding to each model. Therefore, the photocatalytic activity of the ZnO (0001) surface in the visible light range is improved, and certain reference is provided for the practical application of ZnO photocatalysis.

The invention relates to nano-crystal fluorescent powder and a preparation method thereof. The invention belongs to the technical field of luminescent materials. The nano-crystal fluorescent powder is Cu-In-Znx-E/ZnS, wherein E=S or Se, and x is no smaller than 0. The preparation method comprises steps that: copper salt, indium salt, alkanethiol and octadecene are isolated from oxygen, mixed, andheated; long-chain alkyl organic acid is added to the product, the mixture is isolated from oxygen and is heated, such that a reaction source is obtained; zinc salt, long-chain alkyl organic amine and octadecene are isolated from oxygen, mixed, and heated, such that a zinc source is obtained; when E=S, the zinc source is added to the reaction source, and the mixture is heated, such that a colloidal solution 1 is obtained; when E=Se, selenium powder is dissolved, and an obtained selenium source is added to the reaction source; the mixture is heated, such that a colloidal solution 2 is obtained; the zinc source is added to the colloidal solution 2, and the mixture is heated, such that a colloidal solution 3 is obtained; the colloidal solution 1 or 3 is washed, and is subject to vacuum drying, such that the nano-crystal fluorescent powder is obtained. According to the invention, the nano-crystal fluorescent powder contains no rare earth element; the luminescence wavelength is adjustable;the nano-crystal fluorescent powder can be uniformly dispersed in an organic solvent; and the application range of the nano-crystal fluorescent powder is wide. The preparation method is advantaged inhigh yield, low cost, environment-friendliness, easy operation, and suitability for large-scaled productions.

The invention belongs to the technical field of condenser products, and specifically discloses a planar fluorescent condenser. The condenser comprises solar cells arranged at two side edges and a glass cover plate, a selective reflection layer, an upper air thin layer, a fluorescent planar optical waveguide layer, a lower air thin layer and a high reflection film which are sequentially arranged from top to bottom at the middle, wherein the fluorescent planar optical waveguide layer comprises a fluorescent substance and a planar optical waveguide, the fluorescent substance is arranged at the surface of the planar optical waveguide or inside the planar optical waveguide, and the fluorescent substance is a carbon quantum dot material. The planar fluorescent condenser can better play multiple effects of absorbing, transmitting or emitting and gathering optical energy, so that light received by the solar cells is enabled to not only contain a solar portion, but also contain a fluorescence emission portion of carbon quantum dots, and the photoelectric conversion efficiency of a solar power generation system is effectively improved.

The invention discloses a method for manufacturing a SnS2/SnS heterojunction thin-film solar cell at a time. The method includes the following steps: preprocessing a substrate, preparing mixed raw materials for use, conducting vacuum obtaining and substrate heating, cleaning a cavity and the substrate through argon plasma, depositing a heterojunction with a plasma enhanced chemical vapor deposition method, conducting vacuum annealing and cooling, and manufacturing the SnS2/SnS heterojunction thin-film solar cell. According to the method, due to the fact that the proportion of the mixed raw materials is set, and the relation between a heating temperature value T of a reaction source and a reaction deposition time value t is set, SnS2 thin film and SnS thin film which are excellent in quality can be successively deposited in the one-time experiment process, the core part, namely the p-n junction, of the solar cell is directly manufactured at a time accordingly, the manufacturing period of the SnS2/SnS heterojunction thin-film solar cell is greatly shortened, and the manufacturing cost of the SnS2/SnS heterojunction thin-film solar cell is greatly reduced.

The invention discloses a planar fluorescent condenser and a method for preparing the same. The planar fluorescent condenser comprises scattering particles, fluorescent quantum dots and planar optical waveguides. The method includes (1), preparing fluorescent quantum dot dispersing liquid; (2), mixing polymers and/or raw materials for preparing the polymers with the scattering particles, preparing the composite planar optical waveguides by the aid of obtained mixed solution, combining the fluorescent quantum dot dispersing liquid with the composite planar optical waveguides to obtain the composite planar fluorescent condenser, alternately, carrying out a step (2)' instead of the step (2) after the step (1) is carried out, to be more specific, mixing the polymers and/or the raw materials for preparing the polymers, the scattering particles and the fluorescent quantum dot dispersing liquid with one another and preparing the doped planar fluorescent condenser by the aid of mixed solution. The planar fluorescent condenser and the method have the advantages that the light conversion efficiency of the planar fluorescent condenser can be improved by more than 50% as compared with planar fluorescent devices without doped scattering particles, and the planar fluorescent condenser and the method are low in cost and have broad application prospects.

The invention discloses a method for preparing a thin film solar cell adsorbing layer CuInSe2 film, comprising the following steps of: sputtering Cu, In and Se targets successively to prepare a ternary laminate or a ternary period laminate film by accurately regulating the iron beam sputtering parameter, and the like by adopting an iron beam sputtering sedimentation method, and annealing at high temperature to prepare the CuInSe2 film under the same high-vacuum environment. The method for preparing thin film solar cell adsorbing layer CuInSe2 film has optimized process and simple operation and improves the use ratio of materials; the prepared CuInSe2 film has typical copper phrite structure; the Cu/In/Se atomic ratio approaches the ideal stoichiometric ratio 1:1:2 of CIS; Cu is slightly richer than In; the optical band gap is 1.05eV; the absorption coefficient of light is as high as 105cm<-1>; and the resistivity of the thin film is less than 0.01omega cm. The invention satisfies the performance requirement of high-efficiency photovoltaic device.

The invention discloses a preparation method of a nano-cellulose whisker MoS2/graphene composite electrode material, which comprises the following specific steps of treating one of cotton, wood pulp and bamboo pulp through sulfuric acid to obtain nano cellulose whisker, mixing the whicker with thiourea and sodium molybdate, and placing the mixture in a hydrothermal reaction kettle for hydrothermal reaction to obtain the MoS2 nanorods, then compounding the MoS2 nanorods with the graphene oxide, and carrying out high temperature carbonization of the compound in a nitrogen atmosphere to obtain a MoS2 nanorod/graphene composite material . The MoS2 nanorod/graphene composite material is directly applied to the counter electrode of the dye-sensitized solar cell. The dye-sensitized solar cell counter electrode material prepared based on the nano-cellulose whisker MoS2 nano,rod/graphene has a hollow nano rod structure and a great specific surface area, is beneficial to the permeation of electrolyte and the transmission of electrons, has more catalytic activity sites for the redox reaction. The method has the advantages of simple preparation process, low cost, environment friendliness and wide application prospect.

The invention discloses a full-inorganic perovskite quantum-dot CsPbBr3 electric storage device and a fabrication method thereof. The full-inorganic perovskite quantum-dot CsPbBr3 electric storage device has dynamic random access memory (DRAM) electric storage performance, the application of perovskite quantum dot in the storage device is expanded, the semiconductor device can be favorably applied, the DRAM electric storage behavior is successfully achieved by the fabricated electric storage device having a sandwiched structure, meanwhile, the storage device is simple in fabrication process and good in stability and has the characteristics of good repeatability and frequent bending. The invention provides a new design idea for a flexible electric storage device; and with the flexible electric storage device fabricated by the technology, the DRAM electric storage behavior is successfully achieved.

An objective of the invention is to provide an organic EL device that combines various materials of the device and a capping layer composed from a material that absorbs sunlight within the wavelength range of 400 nm to 410 nm to prevent impact on materials inside the organic EL device, has a high light absorption coefficient and a high refractive index to significantly improve light extraction efficiency, has excellent stability, durability and light resistance in a thin film, and has no absorption within the wavelength ranges of blue, green and red, to thereby effectively achieve the characteristics of the various materials of the device. The invention is an arylamine compound having a benzazole structure, and is also an organic EL device including a capping layer containing the arylamine compound and a light-emitting layer containing a host and a phosphorescent dopant.

The invention discloses a perovskite light absorbing material and a preparation method thereof, and belongs to the technical field of materials. The preparation method of the perovskite light absorbing material comprises the steps of adding GeO2 to a halogen acid solution, then adding a hypophosphorous acid solution and reacting, then adding rubidium salt and reacting, and performing solid-liquid separation, washing and drying to acquire an RbGeX3 perovskite light absorbing material, wherein X is Br or I. The perovskite light absorbing material (RbGeX3) prepared according to the invention greatly expands the type and the scope of perovskite photoelectric materials, can significantly increase the light absorbing coefficient in the visible light range and improves the photoelectric conversion efficiency.

The invention provides a blue fluorescent material which comprises aluminum hydroxide with a chemical formula of Al2O3.nH2O, wherein n is 0.2, 1 or 3; and the material does not contain a rare-earth element. The invention further provides a preparation method for the blue fluorescent material. The blue fluorescent material provided by the invention has the characteristics of small toxicity, a high fluorescent quantum yield, a great light-emitting wavelength range and the like, and is wide in scope of application; and the preparation method for the blue fluorescent material is simple in process and is high in yield.

The invention relates to the technical field of solar light-heat conversion evaporation sewage purification and treatment, in particular to a portable solar light-heat conversion water treatment and purification device. By means of a solar collecting lens, the utilization rate of incident sunlight is effectively increased, and the heat evaporation speed of water is improved; by means of a porous filter membrane, large-particle pollutants are primarily filtered out from to-be-processed water; by means of a semiconductor nanometer material as the light-heat conversion carrier, on one hand, the light-heat conversion efficiency is improved and water evaporation is accelerated, and on the other hand, organic pollutants in water can be effectively removed due to the photocatalytic effect of thesemiconductor material. In addition, considering the application in weak-light areas and at nights, the electric heating auxiliary evaporation technology is adopted. Through the treatment of the device, most of impurities in original water can be removed, and the finally-obtained water quality can reach the level of deionized water. The survival water utilization problem in water source pollutionlands, sea island army service stations and other freshwater shortage environments is effectively solved.

The invention discloses a heterojunction solar battery composed of amorphous silicon/crystalline silicon/beta-FeSi2, and is characterized in that the heterojunction solar battery comprises an illuminated surface electrode, a transparent conducting layer, a p+ type amorphous silicon layer, a p type crystalline silicon layer, an i type beta-FeSi2 layer, an n+ type amorphous silicon layer and a back metal electrode which are laminated and combined to form a P+PIN+ heterojunction structure. According to the solar battery, the amorphous silicon layer has wide forbidden bandwidth, good surface passivation is formed on the battery surface, the open-circuit voltage of the battery is increased, the temperature coefficient is reduced, and the high temperature performance is obviously improved; the beta-F2Si2 with a narrow band gap and crystalline silicon are used as light absorption layers at the same time, thereby effectively expanding the spectral response range, particularly long-wave band light response of a crystalline silicon battery, and improves short-circuit current of the battery; and since the light absorption coefficient of beta-FeSi2 is high, the required thickness is small, the thickness of the crystalline silicon layer can be further reduced, and material costs are reduced.

The invention relates to a PEG-modified two-dimensional nanosheet photothermal conversion material. The material is formed through coordination self-assembling of tetrahydroxyanthraquinone and bivalent copper ions and modification with PEG, and the diameter of the above nanosheet is 500-800 nm, wherein a molar ratio of the tetrahydroxyanthraquinone to the bivalent copper ions is (1.5-2):1. The two-dimensional nanosheet has a high light absorption coefficient in the near-infrared region, high photothermal conversion ability under the irradiation of near-infrared laser, expands existing photothermal conversion materials, and can be used in the photothermal therapy of tumors.

The invention discloses a novel ultra-thin efficient solar cell of a sandwich structure consisting of Si/FeSi2/Si and a manufacturing method thereof. The method mainly substitutes a beta-FeSi2 material for the intrinsic silicon layer of a silicon solar cell of the conventional PIN structure. As a band gap of the beta-FeSi2 material is narrower than that of a Si material, the energy band structure of a heterojunction consisting of the beta-FeSi2 and the Si enables photon-generated carriers generated by illumination to be separated and moved directionally and reversely under the effect of the built-in field of the heterojunction so as to realize a function of photovoltaic conversion. The adopted beta-FeSi2 has a photoabsorption coefficient of 105/cm, which is two orders of magnitude greater than 103/cm of a monocrystalline silicon, and has higher electron and hole mobilities than those of the monocrystalline silicon. In the solar cell of a wide/narrow/wide band gap sandwich structure consisting of the beta-FeSi2 and the Si, an open-circuit voltage, which is determined by P-type and N-type silicon layers at both ends of the beta-FeSi2 layer, can reach over 0.7 V; and the solar cell can have the photovoltaic conversion efficiency equal to that of a crystal silicon solar cell within 5 microns of the total effective thickness. The ultra-thin efficient solar cell of the sandwich structure consisting of the Si/FeSi2/Si has the advantages of ultra thin, high efficiency, long service life and low cost equal to that of an amorphous silicon thin film solar cell, which can be directly applied to the commercialization production of solar cells.

The invention discloses a preparation method of a copper-zinc-tin-sulfide photoelectric film. According to the method, copper sulfate, zinc sulfate, stannous sulfate and sodium hydroxide are uniformlymixed; sintering and ball milling are performed on an obtained mixture, so that composite oxide nano ink is obtained; a molybdenum substrate is spin-coated with the composite oxide nano ink, so thatan oxide pre-formed film can be obtained; and the oxide pre-formed film and sulfur powder are annealed in a tube furnace, so that the copper-zinc-tin-sulfide photoelectric film can be obtained. The copper-zinc-tin-sulfide photoelectric film prepared by using the preparation method is compact and uniform; the particle diameter of the copper-zinc-tin-sulfide photoelectric film is about 1 micron; thelight absorption coefficient of the copper-zinc-tin-sulfide photoelectric film is high; and the band gap width of the absorption layer of the copper-zinc-tin-sulfide photoelectric film is close to atheoretical value. The copper-zinc-tin-sulfide photoelectric film is suitable for being use as a thin film solar cell. The preparation method of the invention has the advantages of low cost and simpleprocess.

The invention discloses a quantum well infrared detector, which is prepared by a standard semiconductor process by using a GaAs/AlxGa1-xAs material system and utilizing an MBE or MOCVD technology to grow. The thickness of the GaAs potential well layer of a quantum well structure is 15 to 20 times of that of a AlxGa1-xAs potential well layer, the thickness of one cycle of a multi-quantum well layer is 80-120nm, and the number of cycles of the multi-quantum well layer is15 to 20, so the detector can work in a room temperature or a quasi-room temperature condition, and the absorption coefficient reaches more than 30%, thus effectively suppressing dark current and greatly reducing device noise. The detection rate can reach or get close to a theoretical limit value, the response speed is higher than 1GHz, and the maximum speed can reach 100GHz.

The invention discloses a weak light detection communication energy-carrying system and a transmission algorithm thereof. The system comprises an information source end and an information sink end, achannel for communication between the information source end and the information sink end is a visible light frequency band; the information source end comprises a visible light emitter; the information sink end comprises a photoelectric element used for receiving visible light. The photoelectric element is an amorphous silicon solar glue dripping plate, the information sink end further comprisesa storage battery, the storage battery is used for storing part of electric energy converted from visible light through the amorphous silicon solar glue dripping plate, and the amorphous silicon solarglue dripping plate serves as a signal recognition device and also serves as energy storage conversion equipment. According to the system, the high-speed response performance of the lighting device is reasonably utilized, the lighting function, the communication function and wireless electric energy transmission are integrated, light energy can be stored in the storage battery, the circuit used for the system consumes energy, the cost of electric wires and flat cables is reduced, and the trouble of replacing a power supply for equipment can be avoided.

The invention discloses a homojunction photodiode and triode based on methylamine lead bromide single crystal and a preparation method thereof. An MAPbBr<3> single crystal becomes an n-type semiconductor by doping BiBr<3>, an undoped MAPbBr<3> single crystal is a weak p-type semiconductor, n-type and p-type MAPbBr<3> single crystals form a homojunction, and then a p-n homojunction photodiode and an n-p-n homojunction phototriode are constructed. The detector provided by the invention is simple in preparation process and good in device performance, and opens up a new prospect for the application of the hybrid perovskite single crystal material in a photoelectric detector.

The invention provides a micro-generator based on a nano-film thermocouple and a superlattice photoelectric structure. The substrate of the micro-generator is composed of an N-type silicon wafer. A suede structure, a second silicon nitride film and a back electric field structure are manufactured on the light receiving surface of a photocell. On the upper surface of the substrate, a layer of epitaxial monocrystalline silicon thin film is covered on the superlattice structure. One part of the epitaxial monocrystalline silicon thin film is in the form of a P-type doped region, and another part of the epitaxial monocrystalline silicon thin film is in the form of an N-type doped region. A silicon dioxide layer passivation layer is deposited on the monocrystalline silicon thin film. The silicondioxide layer passivation layer is connected with the base region electrode and the emitting region electrode of the photocell. A thermopile, for realizing the main function of the thermoelectric generator, is formed by connecting a plurality of thermocouples in series. Each thermocouple is composed of an N-type polycrystalline silicon nano-film and a P-type polycrystalline silicon nano-film. Thethickness of each polycrystalline silicon nano-film is 1-100 nm. Above the thermopile, a cavity structure is manufactured through the release of a sacrificial layer. A metal plate is arranged above the cavity. A third silicon nitride film is arranged between the metal plate and the thermopile to space the metal plate from the thermopile.