Preparation method of copper-zinc-tin-sulfide photoelectric film

A photoelectric thin-film, copper-zinc-tin-sulfur technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of large particle size and low light absorption coefficient, and achieve the effects of low cost, high light absorption coefficient and simple process

Active Publication Date: 2018-10-02
XI'AN UNIVERSITY OF ARCHITECTURE AND TECHNOLOGY
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Problems solved by technology

[0003] Aiming at the defects and deficiencies of the existing preparation technology, the purpose of the present invention is to provide a method for preparing a copper-zinc-tin-sulfur photoelectric film, which solves the problem that the particle size of the absorbing layer of the copper-zinc-tin-sulfur photoelectric film prepared by the existing preparation method is relatively large. , The problem of low light absorption coefficient

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  • Preparation method of copper-zinc-tin-sulfide photoelectric film

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[0027] The invention discloses a method for preparing a copper-zinc-tin-sulfur photoelectric thin film, which specifically includes the following steps:

[0028] Step 1, mix copper sulfate, zinc sulfate, stannous sulfate and sodium hydroxide according to the mass concentration ratio of 2:1:1.5:1, add deionized water containing PVP, and adjust the pH value at 40-55°C 7 to 11, stand at this temperature for 1.5 to 2 hours, wash and filter to separate to obtain a composite precipitate;

[0029] Wherein, the addition amount of PVP is 0.1%-2% of the mass of deionized water. The mass concentration of copper sulfate is 12-60g / L, the mass concentration of zinc sulfate is 8-35g / L, the mass concentration of stannous sulfate is 8-40g / L, and the mass concentration of sodium hydroxide is 10-35g / L.

[0030] Step 2, vacuum-drying the composite precipitate, placing it in a tubular atmosphere furnace, and sintering at 450-700° C. for 0.5-4 hours to obtain composite oxide particles;

[0031] S...

Embodiment 1

[0038] Take mass concentration as 32g / L CuSO 4 , 16g / L ZnSO 4 , 21.5g / L SnSO 4 Mix with 16g / L NaOH, pour into deionized water containing PVP, wherein the added content of PVP is 0.5% of the mass of deionized water, adjust the pH of the solution to 9.5 at 40°C, and stand and age at this temperature for 2h, Filter and wash with deionized water and ethanol three times respectively to obtain mixed hydroxide precipitation, and the precipitation rates of copper, zinc and tin all reach more than 95%;

[0039] The mixed hydroxide precipitate obtained above is calcined at a high temperature in a tubular atmosphere furnace, the temperature is controlled at 550° C., and the holding time is 2 hours to obtain composite oxide particles, and the recovery rate of copper, zinc and tin reaches more than 98%. Take 1.5g of copper-zinc-tin composite oxide and disperse it in 30ml of ethanol, add methyl cellulose accounting for 1% of the ethanol mass and PVP accounting for 1% of the ethanol mass, ...

Embodiment 2

[0044] Take mass concentration as 16g / L CuSO 4 , 8g / L ZnSO 4, 8g / L SnSO 4 Mix with 10g / L NaOH, pour into deionized water containing PVP, wherein the added content of PVP is 0.1% of the mass of deionized water, adjust the pH of the solution to 8.5 at 55°C, and stand and age at this temperature for 2h, Filter and wash with deionized water and ethanol three times to obtain mixed hydroxide precipitates; the precipitation rates of copper, zinc and tin all reach more than 85%; the above mixed hydroxide precipitates are placed in a tubular atmosphere furnace for high temperature calcination, controlled The temperature is 480°C, the holding time is 1h, and the composite oxide particles are obtained, and the recovery rate of copper, zinc and tin reaches more than 88%. Weigh 1.5g of copper-zinc-tin composite oxide and add it to 20ml of ethanol, and add 0.2% The methyl cellulose and 0.2% PVP were ball milled for 7 hours at a speed of 450r / min, and after mixing evenly, they were ultraso...

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Abstract

The invention discloses a preparation method of a copper-zinc-tin-sulfide photoelectric film. According to the method, copper sulfate, zinc sulfate, stannous sulfate and sodium hydroxide are uniformlymixed; sintering and ball milling are performed on an obtained mixture, so that composite oxide nano ink is obtained; a molybdenum substrate is spin-coated with the composite oxide nano ink, so thatan oxide pre-formed film can be obtained; and the oxide pre-formed film and sulfur powder are annealed in a tube furnace, so that the copper-zinc-tin-sulfide photoelectric film can be obtained. The copper-zinc-tin-sulfide photoelectric film prepared by using the preparation method is compact and uniform; the particle diameter of the copper-zinc-tin-sulfide photoelectric film is about 1 micron; thelight absorption coefficient of the copper-zinc-tin-sulfide photoelectric film is high; and the band gap width of the absorption layer of the copper-zinc-tin-sulfide photoelectric film is close to atheoretical value. The copper-zinc-tin-sulfide photoelectric film is suitable for being use as a thin film solar cell. The preparation method of the invention has the advantages of low cost and simpleprocess.

Description

technical field [0001] The invention belongs to the technical field of thin-film solar cells, and in particular relates to a preparation method of a copper-zinc-tin-sulfur photoelectric thin film. Background technique [0002] The copper-zinc-tin-sulfur thin film material has a direct band gap (about 1.5eV) that matches well with solar radiation, and has a high light absorption coefficient (greater than 10 4 cm -1 ), good stability, no light-induced attenuation effect, large reserves of raw materials in the earth's crust, cheap price and environmental friendliness, etc., it is an ideal photoelectric conversion material. There are many preparation methods for copper-zinc-tin-sulfur photoelectric thin films, such as sputtering method, electrodeposition method, sol-gel method, nano-ink method, solution method and so on. Compared with other preparation methods, the nano-ink method is easy to achieve the doping and modification of the preparation materials, and can form films o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L31/032
CPCH01L21/02425H01L21/02565H01L21/02628H01L31/0326Y02E10/50
Inventor 李倩王丝玉李林波夏进吴杰黄文龙杨强强
Owner XI'AN UNIVERSITY OF ARCHITECTURE AND TECHNOLOGY
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