Quantum well infrared detector
An infrared detector and quantum well technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as limiting wide application, and achieve the effects of improving detection rate, suppressing dark current, and reducing device noise
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[0024] Such as figure 1 with figure 2 As shown, the quantum well infrared detector proposed by the present invention uses GaAs material as the substrate 1, and uses MBE or MOCVD technology to grow the following multilayer structure layer by layer:
[0025] (1) An undoped GaAs buffer layer 2.
[0026] (2) The n-type doped GaAs bottom electrode layer 3 has a thickness of 0.5 to 10 μm, and the doped material is silicon (Si), and its doping concentration is 0.5 to 5.0×10 18 cm -3 , For example, the Si doping concentration is about 1×10 18 cm -3 .
[0027] (3) The multi-quantum well layer 4 is formed alternately grown in multiple periods after the barrier first, and the number of periods of the multi-quantum well layer 4 is 15-20. Among them, each cycle includes an Al x Ga 1-x The As barrier layer 41 and a GaAs well layer 42 are n-type doped in the GaAs well layer 42. The dopant is Si, and the doping concentration meets or is close to the optimal conditions of the background limit tempe...
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