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Quantum well infrared detector

An infrared detector and quantum well technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as limiting wide application, and achieve the effects of improving detection rate, suppressing dark current, and reducing device noise

Inactive Publication Date: 2010-10-13
无锡沃浦光电传感科技有限公司
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Problems solved by technology

[0003] At present, mainstream infrared detectors in the mid-to-far infrared band, including InSb infrared detectors, HgCdTe infrared detectors, and quantum well infrared detectors, all work at low temperatures (usually lower than 100K), and need to be cooled by liquid nitrogen Dewar or circulating refrigerators , which severely limits their wide application

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Embodiment Construction

[0024] Such as figure 1 and figure 2 As shown, the quantum well infrared detector proposed by the present invention utilizes GaAs material as the substrate 1, and utilizes MBE or MOCVD technology to grow the following multilayer structure layer by layer:

[0025] (1) One layer of undoped GaAs buffer layer 2 .

[0026] (2) The n-type doped GaAs lower electrode layer 3 has a thickness of 0.5-10 μm, and the dopant is silicon (Si), and its doping concentration is 0.5-5.0×10 18 cm -3 , such as making the Si doping concentration about 1×10 18 cm -3 .

[0027] (3) The multi-quantum well layer 4 formed by alternately growing the potential barrier first and then the potential well in multiple periods, and the number of periods of the multi-quantum well layer 4 is 15-20. Among them, each cycle includes an Al x Ga 1-x As barrier layer 41 and a GaAs potential well layer 42, n-type doping is carried out in the GaAs potential well layer 42, the dopant is Si, and the doping concentr...

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Abstract

The invention discloses a quantum well infrared detector, which is prepared by a standard semiconductor process by using a GaAs / AlxGa1-xAs material system and utilizing an MBE or MOCVD technology to grow. The thickness of the GaAs potential well layer of a quantum well structure is 15 to 20 times of that of a AlxGa1-xAs potential well layer, the thickness of one cycle of a multi-quantum well layer is 80-120nm, and the number of cycles of the multi-quantum well layer is15 to 20, so the detector can work in a room temperature or a quasi-room temperature condition, and the absorption coefficient reaches more than 30%, thus effectively suppressing dark current and greatly reducing device noise. The detection rate can reach or get close to a theoretical limit value, the response speed is higher than 1GHz, and the maximum speed can reach 100GHz.

Description

technical field [0001] The invention relates to a semiconductor infrared optoelectronic device, in particular to a quantum well infrared detector (Quantum Well Infrared Photodetectors, QWIP for short). Background technique [0002] Traditional detectors that are more mature in the mid-infrared to far-infrared bands include indium telluride (InSb) infrared detectors and mercury cadmium telluride (HgCdTe) infrared detectors. In the past thirty years, with the development of low-dimensional material technology, a new technology of quantum well infrared detector has emerged, and has been rapidly developed and widely used. Compared with other infrared technologies, quantum well infrared detectors have the advantages of fast response, high detection rate, adjustable detection wavelength, strong radiation resistance, etc., and can be used by molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) ) and other advanced technology growth, it is easy to make a ...

Claims

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Application Information

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IPC IPC(8): H01L31/101H01L31/0304
Inventor 刘燕君
Owner 无锡沃浦光电传感科技有限公司
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