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Homojunction photodiode and triode based on methylamine lead bromide single crystal and preparation method thereof

A methylamine-lead-bromine single crystal and photodiode technology, applied in chemical instruments and methods, single crystal growth, photovoltaic power generation, etc., can solve the problems of low transmittance, high price, hindering the transport of charge carriers, etc., and achieve sensitive response Effect

Active Publication Date: 2020-06-05
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The selection of electrode materials plays an important role in photodetectors. Traditional photodetector electrode materials, such as noble metals such as gold, silver, and platinum, are expensive, and there are considerable dangling bonds on their irregular surfaces, which may lead to Severe carrier scattering and impeded transport of charge carriers
At present, some oxide electrodes (such as ITO) or graphene electrodes are more and more applied to optoelectronic devices because of their own advantages, but due to the poor flexibility of ITO electrodes and low transmittance in the infrared region, the production of graphene electrodes The complexity of the transfer process also limits the application of both

Method used

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  • Homojunction photodiode and triode based on methylamine lead bromide single crystal and preparation method thereof
  • Homojunction photodiode and triode based on methylamine lead bromide single crystal and preparation method thereof
  • Homojunction photodiode and triode based on methylamine lead bromide single crystal and preparation method thereof

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Embodiment 1

[0054] Embodiment 1, homojunction photodiode based on methylamine lead bromine single crystal

[0055] like figure 1 As shown, the photodiode of this embodiment is made of n-type MAPbBr 3 Single crystal 1 and p-type MAPbBr 3 The single crystal 2 is connected to form a p-n homojunction, thus forming a photodiode, in the n-type MAPbBr 3 Single crystal 1 and p-type MAPbBr 3 Au electrodes 3 each having a thickness of 50 nm are vapor-deposited on the surface of the single crystal 2 . The specific production steps are as follows:

[0056] Step 1. Wash and dry the glass bottle, then add 0.2755g MABr, 0.928g PbBr 2 and 0.003gBiBr 3 , then add 2mL DMF, seal and stir for 15min to dissolve the solute completely, and then use a filter with a pore size of 0.13μm×0.13μm to filter out impurities to obtain an n-type precursor solution; the n-type precursor solution contains 1.23M MABr, 1.23M PbBr 2 and accounting for PbBr 2 0.3 mole % BiBr 3 ;

[0057] Step 2. Put the glass bottle ...

Embodiment 2

[0068] Embodiment 2, homojunction phototransistor based on methylamine lead bromine single crystal

[0069] like Figure 11 As shown, the phototransistor of this embodiment is made of n-type heavily doped MAPbBr 3 Single crystal 11, p-type MAPbBr 3 Single crystal 2 and n-type lightly doped MAPbBr 3 The single crystals 12 are connected in sequence to form an n-p-n homojunction, thereby forming a phototransistor. In n-type heavily doped MAPbBr 3 Single crystal 11, p-type MAPbBr 3 Single crystal 2 and n-type lightly doped MAPbBr 3 Au electrodes 3 with a thickness of 50 nm are vapor-deposited on the surface of the single crystal 12 . The specific production steps are as follows:

[0070] Step 1. Wash and dry the glass bottle, then add 0.2755g MABr, 0.928g PbBr 2 and 0.005gBiBr 3 , then add 2mL DMF, seal and stir for 15min to completely dissolve the solute, and then use a filter with a pore size of 0.13μm×0.13μm to filter out impurities to obtain an n-type heavily doped pr...

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Abstract

The invention discloses a homojunction photodiode and triode based on methylamine lead bromide single crystal and a preparation method thereof. An MAPbBr<3> single crystal becomes an n-type semiconductor by doping BiBr<3>, an undoped MAPbBr<3> single crystal is a weak p-type semiconductor, n-type and p-type MAPbBr<3> single crystals form a homojunction, and then a p-n homojunction photodiode and an n-p-n homojunction phototriode are constructed. The detector provided by the invention is simple in preparation process and good in device performance, and opens up a new prospect for the application of the hybrid perovskite single crystal material in a photoelectric detector.

Description

technical field [0001] The invention belongs to the field of semiconductor photodetectors, in particular to photodetectors based on perovskite homojunction. Background technique [0002] Photodetectors are widely used in optical communication, imaging, and biosensing because they can convert optical signals into electrical signal outputs. The selection of electrode materials plays an important role in photodetectors. Traditional photodetector electrode materials, such as noble metals such as gold, silver, and platinum, are expensive, and there are considerable dangling bonds on their irregular surfaces, which may lead to Severe carrier scattering and impede charge carrier transport. At present, some oxide electrodes (such as ITO) or graphene electrodes are more and more applied to optoelectronic devices because of their own advantages, but due to the poor flexibility of ITO electrodes and low transmittance in the infrared region, the production of graphene electrodes The c...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/48C30B7/14C30B29/54C30B31/04
CPCC30B7/14C30B31/04C30B29/54H10K71/12H10K85/00H10K30/00Y02E10/549
Inventor 梁凤霞蒋静静刘明明罗林保张致翔
Owner HEFEI UNIV OF TECH
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