Method for manufacturing SnS2/SnS heterojunction thin-film solar cell at a time

A solar cell and heterojunction technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of poor bonding between p-type thin films and n-type thin films, large series resistance of solar cells, and increased production costs. The effect of shortening the production cycle, improving the photoelectric conversion efficiency, and simple method

Inactive Publication Date: 2014-11-26
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
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  • Claims
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AI Technical Summary

Problems solved by technology

The preparation of the traditional p-n / p-i-n junction requires the introduction of complex doping processes and increased production costs. In addition, during the preparation process, the p-type thin film and the n-type thin film need to be deposited on the surface of the substrate by two different methods. The cycle is relatively long
With this traditional preparation method, the p-n junction prepared is often prone to faults, and the p-type film and n-type film are not well bonded, resulting in a large series resistance of the solar cell, so that the conversion efficiency is very low

Method used

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  • Method for manufacturing SnS2/SnS heterojunction thin-film solar cell at a time
  • Method for manufacturing SnS2/SnS heterojunction thin-film solar cell at a time

Examples

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Effect test

preparation example Construction

[0039] A kind of SnS 2 The one-time preparation method of / SnS heterojunction thin-film solar cell comprises the following steps:

[0040] (1) Wash the substrate successively with hydrochloric acid, sodium hydroxide, sulfuric acid, acetone, alcohol, and deionized water, and dry;

[0041] (2) Place the cleaned and dried substrate on the upper substrate in the vacuum chamber cavity of the plasma enhanced chemical vapor deposition (PECVD) system, and simultaneously fix the upper substrate and the lower substrate in the cavity;

[0042] (3) Put the mixed raw material containing tin element and sulfur element in the crucible according to a certain ratio, wherein the ratio of the amount of tin element and sulfur element in the mixed raw material is 1:2 to 1:5, and put the crucible into In the reaction source heating device of the plasma enhanced chemical vapor deposition system;

[0043] (4) Close the chamber of the plasma chemical vapor deposition system, turn on the mechanical pu...

Embodiment 1

[0061] (1) Clean the FTO conductive glass successively with hydrochloric acid, sodium hydroxide, sulfuric acid, acetone, alcohol, deionized water, and dry;

[0062] (2) Place the cleaned and dried substrate on the upper substrate of the plasma-enhanced chemical vapor deposition (PECVD) system, and simultaneously fix the upper substrate and the lower substrate in the cavity;

[0063] (3) Take by weighing 5.15g of sodium thiosulfate pentahydrate (Na 2 S 2 o 3 ·5H 2 O) and 5.40g of tin tetrachloride (SnCl 4 ) is placed in the crucible (the ratio of the amount of tin element to sulfur element is 1:2.005), and put into the reaction source heating device of the plasma enhanced chemical vapor deposition system together with the crucible;

[0064] (4) Close the cavity of the plasma chemical vapor deposition system, turn on the mechanical pump (primary pump), and when the pressure is pumped to 30Pa, turn on the molecular pump (secondary pump), and pump the pressure to 5×10 -2 Pa; ...

Embodiment 2

[0080] (1) Clean the FTO conductive glass successively with hydrochloric acid, sodium hydroxide, sulfuric acid, acetone, alcohol, deionized water, and dry;

[0081] (2) Place the cleaned and dried substrate on the substrate table (upper substrate) in the cavity of the plasma enhanced chemical vapor deposition (PECVD) system, and fix the upper substrate and the lower substrate in the cavity;

[0082] (3) Weigh 7.50g of sodium thiosulfate pentahydrate (Na 2 S 2 o 3 ·5H 2 O) and 4.30g of tin tetrachloride pentahydrate ((SnCl 4 ·5H 2 O) (the ratio of the amount of tin element to sulfur element is 1:4.933) is placed in the crucible, and put into the reaction source heating device of the plasma enhanced chemical vapor deposition system;

[0083](4) Close the cavity of the plasma chemical vapor deposition system, turn on the mechanical pump (primary pump), and when the pressure reaches 30Pa, turn on the molecular pump (secondary pump), and pump the pressure to 1×10 -2 Pa;

[0...

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Abstract

The invention discloses a method for manufacturing a SnS2/SnS heterojunction thin-film solar cell at a time. The method includes the following steps: preprocessing a substrate, preparing mixed raw materials for use, conducting vacuum obtaining and substrate heating, cleaning a cavity and the substrate through argon plasma, depositing a heterojunction with a plasma enhanced chemical vapor deposition method, conducting vacuum annealing and cooling, and manufacturing the SnS2/SnS heterojunction thin-film solar cell. According to the method, due to the fact that the proportion of the mixed raw materials is set, and the relation between a heating temperature value T of a reaction source and a reaction deposition time value t is set, SnS2 thin film and SnS thin film which are excellent in quality can be successively deposited in the one-time experiment process, the core part, namely the p-n junction, of the solar cell is directly manufactured at a time accordingly, the manufacturing period of the SnS2/SnS heterojunction thin-film solar cell is greatly shortened, and the manufacturing cost of the SnS2/SnS heterojunction thin-film solar cell is greatly reduced.

Description

technical field [0001] The invention belongs to the technical field of compound thin film solar cells, in particular, relates to a SnS 2 A one-time preparation method for SnS heterojunction thin film solar cells. Background technique [0002] With the increasing development of global industrialization, human beings are facing a worldwide problem of sharp increase in energy consumption and relative scarcity of natural resources. As an outstanding representative of renewable new energy, solar power generation technology has attracted more and more attention from all over the world because of its safety, reliability, noise-free, pollution-free, energy available everywhere and many other advantages. [0003] The low cost of thin-film solar cells increases its competitiveness with crystalline solar cells. At present, the relatively successful thin-film solar cell technologies mainly include amorphous silicon thin-film cells, polycrystalline silicon thin-film cells, copper indium...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C23C16/44C23C16/30C23C16/56
CPCH01L31/0296H01L31/1828Y02E10/543Y02P70/50
Inventor 刘明海王圣明陈俊峰王士才
Owner HUAZHONG UNIV OF SCI & TECH
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