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Optically controlled memristor and preparation method thereof

A technology of memristor and spin-coating method, which is applied in the field of memory, can solve the problems of single working mode and high energy consumption of memristor, and achieve the effects of high light absorption coefficient, high carrier mobility, and reduced operating voltage

Inactive Publication Date: 2020-01-14
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above deficiencies in the prior art, the purpose of the present invention is to provide an optically controlled memristor and its preparation method, aiming to solve the problems of high energy consumption and single working mode of the existing memristor

Method used

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  • Optically controlled memristor and preparation method thereof
  • Optically controlled memristor and preparation method thereof
  • Optically controlled memristor and preparation method thereof

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preparation example Construction

[0033] further, such as image 3 As shown, the present invention also provides a method for preparing an optically controlled memristor, the method comprising the steps of:

[0034] S10, providing a substrate, and depositing a bottom electrode layer on the substrate;

[0035] As an example, glass can be used as the substrate, and the surface of the substrate material is cleaned for use; indium tin oxide (ITO) is used as the bottom electrode material, and a certain thickness of ITO is sputtered on the glass substrate by magnetron sputtering as the bottom of the device. electrode.

[0036] S20, depositing ABX on the bottom electrode layer by spin coating 3 Perovskite active layer;

[0037] Specifically, first prepare ABX 3 The perovskite precursor is now based on methylammonium lead iodide (MAPbI 3 ) perovskite active layer preparation as an example to explain. Take DMSO, MAI and PbI with a molar mass ratio of 1:1:1, respectively 2, and dissolve the mixture in DMF solvent...

Embodiment 1

[0042] (1) Preparation of perovskite precursor solution:

[0043] Weigh DMSO, CsBr and PbBr with a molar mass ratio of 1:1:1, respectively 2 , and the mixture was dissolved in DMF solvent, stirred to make it evenly mixed and set aside.

[0044] (2) Preparation of optically controlled memristor:

[0045] Using PET as the substrate, 300nm AZO was sputtered on the PET substrate by magnetron sputtering as the bottom electrode of the device, and then CsPbBr was prepared by a one-step solution method 3 Perovskite active layer. CbBr 3 The preparation method of the perovskite active layer is as follows:

[0046] CsPbBr 3 Add the perovskite precursor solution dropwise on the PET substrate with the AZO layer, start the spin coater, accelerate the spin coater to 5000rpm in 5s, spin coat at 5000rpm for 40s, and drop in the Chlorobenzene was used as a reverse solvent to promote the crystallization of perovskite; the spin-coated sheet was pre-annealed on a hot stage at 65 degrees Cels...

Embodiment 2

[0048] (1) Preparation of perovskite precursor solution:

[0049] Weigh DMSO, CsI and PbI with a molar mass ratio of 1:1:1, respectively 2 , and the mixture was dissolved in DMF solvent, stirred to make it evenly mixed and set aside.

[0050] (2) Preparation of optically controlled memristor:

[0051] Using glass as the substrate, 300nm ITO was sputtered on the glass substrate by magnetron sputtering method as the bottom electrode of the device, and then CsPbI was prepared by a one-step solution method 3 Perovskite active layer. CaPbI 3 The preparation method of the perovskite active layer is as follows:

[0052] CsPbI 3 The perovskite precursor solution is added dropwise on the glass substrate with the ITO layer, start the spin coater, accelerate the spin coater to 4000rpm in 5s, spin coat at 4000rpm for 30s, and drop in the Chlorobenzene was used as a reverse solvent to promote the crystallization of perovskite; the spin-coated sheet was pre-annealed on a hot stage at ...

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Abstract

The invention relates to an optically controlled memristor and a preparation method thereof. The optically controlled memristor comprises a substrate, a bottom electrode layer, an ABX3 perovskite active layer and a top electrode layer. The preparation method of the optically controlled memristor comprises the step of providing the substrate and depositing the bottom electrode layer on the substrate; depositing the ABX3 perovskite active layer on the bottom electrode layer by a spin coating method; and depositing the top electrode layer on the ABX3 perovskite active layer. According to the invention, perovskite is used as the active layer, and the perovskite material has high photoelectric conversion efficiency. Meanwhile, the activation energy required for ion migration in the perovskite material is very low, and ions can move directionally to form conductive channels at lower voltage so as to effectively reduce the operating voltage of the device. The ion movement of the perovskite material is adjusted through the combined action of electric field and light to realize the light controllable memristor performance. The prepared memristor has the ability of multi-impedance state linear regulation and control and has a good application prospect in the field of neural morphological calculation.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to an optically controlled memristor and a preparation method thereof. Background technique [0002] Memristors (Memristors) are based on the mechanism of resistance transition, and their resistance value can be changed and maintained according to the history of the applied scanning electric field. A basic component. Classical memristors use a sandwich structure with one or more active layers between the top and bottom electrodes. When the device is working under the action of an external electric field, when the electric field strength reaches a certain value (the effect of the electric field often has a cumulative effect), the conductivity of the active layer will change, so that the resistance of the memristor will change and remain for a certain period of time, while This is where the name memristor comes from. A memristor usually has two resistance states, namely a high resis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/881H10N70/021
Inventor 韩素婷杨嘉钦周黎周晔
Owner SHENZHEN UNIV
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