64results about How to "Enhance photoelectric effect" patented technology

A preparing method of a platinum nanometer particle/titanium dioxide nanotube array, an electrode, a non-enzymatic glucose sensor and a composite material are disclosed. The method includes S1), pretreating a titanium sheet, S2) preparing a TiO2 nanotube array through an anodizing manner, S3) preparing a biomimetic polydopamine coating on TiO2 nanotubes through adopting an electropolymerization manner, S4) based on the polydopamine coating and by utilizing the reducibility of itself, loading platinum nanometer particles onto the surface of the titanium dioxide nanotubes and S5) performing performance testing of the non-enzymatic glucose sensor by utilizing the prepared working electrode. According to the platinum nanometer particle/titanium dioxide nanotube array, a composite of the platinum nanometer particles and the titanium dioxide nanotubes is prepared through reduction by adopting a polydopamine electropolymerization manner. The platinum nanometer particle/titanium dioxide nanotube array can be used for manufacturing the non-enzymatic glucose sensor finally. Through a manner of reducing the platinum nanometer particles by the electropolymerization-loaded biomimetic polydopamine, problems that auto-agglutination in traditional polydopamine dipping methods is long in time, poor in uniformity, and the like are overcome.

The invention relates to a TiO2 nanosheet vertically growing on the surface of a carbon-based electrode and a preparation method of the TiO2 nanosheet and belongs to the technical field of the nanomaterials. The preparation method of the TiO2 nanosheet comprises the following four steps: performing pretreatment on a substrate; performing an in-situ hydrothermal reaction on the pretreated substrate in a sodium hydroxide solution, which is a process of dissolution and recrystallization, and adding a certain amount of structural inducer to form a nanosheet array evenly grown in such a manner of being perpendicular to the surface of the substrate; performing washing and acid soaking, namely repeatedly washing the generated TiO2 nanosheet by use of ultrapure water after the reaction is completed and soaking the TiO2 nanosheet in an acid until the TiO2 nanosheet is neutral; and calcining for a while at a certain temperature in an N2 protection atmosphere to obtain the single-crystal vertically grown TiO2 nanosheet. The TiO2 nanosheet has excellent biocompatibility, stability and environmental friendliness; the preparation method is simple; the vertically grown TiO2 nanosheet is capable of reducing the resistance to electron transfer and can be applied to a microbial fuel cell (MFC) to improve electric quantity output.

The invention discloses a fluorine-substituted organic micro-molecular hole-transport material and an application thereof. The material provided by the invention has a simple molecular structure, wherein benzodithiophene and derivatives thereof are used as a central core; different heterocycle-containing units are introduced to capping groups; and the central core and the capping groups are linkedby different fluorine-substituted phenyl groups. The material provided by the invention has the advantages of simple synthesis steps, easiness in purification, good solubility in an organic solvent,proper molecular energy levels, high hole mobility and electrical conductivity, and good hydrophobicity, is applied to perovskite solar cells with good stability and high short-circuit current densityand energy conversion efficiency, and has extensive application prospects.

The invention discloses a triphenylamine-benzothiophene organic small-molecule hole transporting material and an application thereof.The material has a specific heterocycle conjugated system and triphenylamine structural units with alkyl chains, and the solubleness and the hydrophobicity are good in an organic solvent; as the hole mobility can be effectively improved through a large two-dimensional conjugate plane structure, the material is applied to a perovskite solar cell, the stability of a device can be improved, the current density and the high photoelectric conversion rate are increased, and the material has the broad application prospects.

The invention discloses a planar fluorescent condenser and a method for preparing the same. The planar fluorescent condenser comprises scattering particles, fluorescent quantum dots and planar optical waveguides. The method includes (1), preparing fluorescent quantum dot dispersing liquid; (2), mixing polymers and/or raw materials for preparing the polymers with the scattering particles, preparing the composite planar optical waveguides by the aid of obtained mixed solution, combining the fluorescent quantum dot dispersing liquid with the composite planar optical waveguides to obtain the composite planar fluorescent condenser, alternately, carrying out a step (2)' instead of the step (2) after the step (1) is carried out, to be more specific, mixing the polymers and/or the raw materials for preparing the polymers, the scattering particles and the fluorescent quantum dot dispersing liquid with one another and preparing the doped planar fluorescent condenser by the aid of mixed solution. The planar fluorescent condenser and the method have the advantages that the light conversion efficiency of the planar fluorescent condenser can be improved by more than 50% as compared with planar fluorescent devices without doped scattering particles, and the planar fluorescent condenser and the method are low in cost and have broad application prospects.

The invention discloses serial compounds with triptycene as a framework and in bridge connection with metalloporphyrin through pyrene tetrone and a preparation method therefor, and belongs to the photoelectric conversion material field. The compound molecular formula is C320H348N24M3. The structural formula is shown in the specification. Triptycene is subjected to nitration by utilization of concentrated nitric acid, and 2,6,14-trinitro-triptycene; after reduction, a reaction with propionic anhydride, p-toluenesulfonic acid and potassium nitrate is carried out, then sodium hydroxide is added, hydrolysis is carried out, and 2,6,14-triamino-3,7,15-trinitro-triptycene is prepared; after reduction of stannous chloride, ethanol and concentrated hydrochloric acid, 2,3,6,7,14,15-hexaamino triptycene hexachloro hydrochloride. 3,5-bis-tert-butyl benzaldehyde and pyrrole are reacted and porphyrin is prepared; porphyrin is reacted with cupric acetate and cupric nitrate solutions and nitro copper porphyrin is prepared; 4-amino-1,2,4-triazole is added, a reaction is carried out, and an amino substituted nitro copper porphyrin is prepared; after reduction, diamino copper porphyrin is prepared. 2,3,6,7,14,15-hexaamino triptycene hexachloro hydrochloride and 2,7-bis-tert-butyl pyrene-4,5,9,10- tetrone are reacted, and a compound 1 is prepared; the compound 1 is reacted with the diamino copper porphyrin, and a compound 2 is prepared; after metal removal, a reaction with a methanol solution of corresponding metal acetate is carried out, and the compound is prepared.

The invention discloses a novel polythiophene disperse system as well as a preparation method and application thereof, belonging to the field of chemical materials. The novel polythiophene disperse system consists of the following components in parts by mass: 0.01-1.00 part of 3,4-ethylene dioxythiophene, 0.04-14.00 parts of main chain conjugated polyelectrolyte, 0.03-3.30 parts of an oxidant and 40-400 parts of a solvent, wherein a 3,4-ethylene dioxythiophene monomer is subjected to in situ oxidation polymerization in an aqueous solution of the water-soluble main chain conjugated polyelectrolyte to form a blue-black ink-like disperse system. A compact film is formed through slow volatilization of the solvent, thiophene molecules of the film are arranged in parallel and piled along molecular chains of the polyelectrolyte to form a height-oriented crystalline structure, so that the conductivity and stability of the film are obviously improved. The film has an important application prospect in the field of organic electronic devices including polymer photovoltaic cells, organic light-emitting diodes and super-capacitors.

The invention relates to a manufacturing method of screen cloth for bedding articles. The manufacturing method comprises the following steps: I, preparing a spinning modifying agent for the bedding articles; II, preparing a spinning oil agent for the bedding articles; III, preparing spinning polyester functional master batch for the bedding articles; IV, preparing multi-performance polyester polyester monofilaments for the bedding articles; V, preparing the screen cloth for the bedding articles. The prepared screen cloth has a good bacteriostatic anti-radiation healthcare effect.

Provided are a lithium niobate photomodulator and a manufacturing and packaging method thereof. A waveguide structure is manufactured on a lithium niobate substrate through hydrogenated amorphous silicon, the size of a waveguide can be effectively reduced by means of the high refractive index of the amorphous silicon, and therefore the distance between metal electrodes on the lithium niobate photomodulator is reduced, and voltage needing modulating is low. A waveguide chip is preferentially manufactured by the hydrogenated amorphous silicon, and Si:H chains of the amorphous silicon can reduce optical losses. Due to the fact that the thickness of the hydrogenated amorphous silicon is adjusted, the photoelectric effect of the lithium niobate photomodulator can be maximized under the premise that the size of the waveguide is guaranteed. Due to that fact that the thickness of silicon dioxide and the thicknesses of the metal electrodes are controlled, good radio frequency matching can be guaranteed, and an optical fiber interface connected with the outside is achieved through waveguide lines penetrating through a waveguide layer; because all the waveguide lines are located in the waveguide layer, enough metal regions for packaging or testing can be reserved. The perfect packaging process can reduce the occurrence probability of the phenomenon of electric leakage, and the phenomenon that a humid environment leads to a short-circuit phenomenon is avoided.

The invention relates to a synthesizing method of a bimetallic photocatalyst with a hollow self-doped structure. The synthesizing method comprises the following steps of mixing glacial acetic acid, deionized water, ion liquid [Bmin][BF4] and tetrabutyl titanate under the stirring state until the transparent and clear state is formed, transferring into a 70ml hydrothermal reaction kettle lined withTeflon, and perform microwave reaction; washing, drying, mixing with urea, calcining, and adding a metal precursor mixed solution to react; washing, drying, and calcining, so as to obtain the bimetallic AuPt/N-TiO2 (copper-platinum/nitrogen-titanium dioxide) photocatalyst with the hollow self-doped structure. Compared with the prior art, the synthesizing method has the advantages that the synthesized nanoparticle has small size and good dispersivity, and the tightness of the metal-conductor interface bonding is greatly improved by in-situ synthesizing; the required equipment is simple, the technology is simple and convenient, the additional hazard to the environment is avoided, the high-value utilization of aromatic alcohol matters is realized, and the deeper social meaning and economic value are realized.

The embodiment of the invention discloses a photoelectric detection lamination. The photoelectric detection lamination comprises m broad-band gap amorphous oxide semiconductor layers, n narrow-band gap amorphous oxide semiconductor layers, and an electrode on the photoelectric detection lamination, wherein the broad-band gap amorphous oxide semiconductor layers and the narrow-band gap amorphous oxide semiconductor layers are alternately arranged, the forbidden band width of the broad-band gap amorphous oxide semiconductor layers is greater than the forbidden band width of the narrow-band gap amorphous oxide semiconductor layers, and m and n are not less than 1. Through the formed photoelectric detection lamination with amorphous oxide semiconductors with high and low staggered energy bands, photo-generated current is increased and photoelectric efficiency is greatly improved.

The invention discloses a preparation method of a Pt-loaded sulfur-rich molybdenum disulfide boundary site modified titanium dioxide nanotube array. The preparation method comprises the following steps: firstly, performing cleaning pretreatment to the surface of a substrate material; then, preparing an ethylene glycol solution containing ammonium fluoride and water as an electrolyte, performing electrochemical anodic oxidation on the titanium base material, and placing the titanium base material in a muffle furnace for calcinating; constructing vertically arranged sulfur-rich molybdenum disulfide nanosheets on a TiO2 nanotube array by a hydrothermal method; finally, with a Pt line as a counter electrode, Ag/AgCl as a reference electrode and sulfuric acid as the electrolyte, depositing Pt to a boundary site of a sulfur-rich molybdenum disulfide sheet by electrochemical cyclic voltammetry. The Pt-loaded sulfur-rich molybdenum disulfide boundary site modified titanium dioxide nanotube improves visible light absorption; moreover, a composite material is used for forming a metal-p-n junction, and through loading onto the active boundary site, the electron transport is greatly improved and the organic pollutant degrading ability of visible light is promoted.

The invention discloses a dye-sensitized solar cell. The dye-sensitized solar cell comprises a photo-anode, a dye sensitizer, a redox electrolyte and a counter electrode, wherein the photo-electrode adopts a SnO2 nanometer film; the SnO2 nanometer film is a soapstone-doping SnO2 nanometer film, a SnO2 nanometer film subjected to TiCl4 after-treatment or a soapstone-doping SnO2 nanometer film subjected to the TiCl4 after-treatment. According to the invention, the soapstone-doping SnO2 nanometer film, the SnO2 nanometer film subjected to the TiCl4 after-treatment or the soapstone-doping SnO2 nanometer film subjected to the TiCl4 after-treatment is regarded as the photo-anode for the preparation of the dye-sensitized solar cell, so that the photoelectric conversion efficiency of the dye-sensitized solar cell is improved efficiently.

A method of preparing light-emitting porous silicon from LiAlH4 comprises the steps of uniformly mixing white carbon black and LiAlH4 at a weight part ratio of (0.8-1.6):(0.53-1.13) to form a mixture, and putting the mixture in a heating furnace with the furnace chamber volume of 10-30L; uniformly spreading 100-325-mesh carbon powder on the surface of the mixture at a weight part ratio of the powdered carbon to the mixture of (0.07-0.17):(1.33-2.73); raising the temperature of a furnace chamber of the heating furnace to 400-550 DEG C within 1-5h, and keeping the temperature for reaction for 3-5h to form a reaction product; gradually cooling the reaction product to the room temperature at a rate of 55-65 DEG C per hour, washing the reaction product with hydrochloric acid, room temperature distilled water and alcohol sequentially for at least once to obtain a washing product, and drying the washing product for 2-3h at 90-110 DEG C to form the light-emitting porous silicon with a better photoelectric effect.

The invention provides an anti-reflecting layer with progressive refractivity and a manufacture method of the anti-reflecting layer so as to eliminate reflecting action of light on interfaces. The anti-reflecting layer with the progressive refractivity is characterized in that the anti-reflecting layer is formed by depositing a first material and a second material, and the refractivity (neff) of the anti-reflecting layer is changed progressively along with the thickness between refractivity (n1) of the first material and refractivity (n2) of the second material, wherein the refractivity of each thickness of the anti-reflecting layer is accordant with an effective media law and satisfies the equation that neff={n12f+n22(1-f)}1/2, and the f refers to filling ratio of the first material of the anti-reflecting layer.

The invention discloses a method for preparing group II-VI semiconductor films on a flexible substrate, high-quality group II-VI semiconductor films are prepared on the flexible substrate, and still have good photoelectric performance after a certain degree of bending and certain bending times. An electron beam evaporation coating method can ensure that deposition of a target material on the substrate is performed at a relatively lower temperature, so that the problems of incapability of resisting high temperature and poor dimensional stability of flexible substrate PET are electively solved.By use of the electron beam evaporation method, high-quality II-VI semiconductor films can be obtained on the flexible substrate PET, and a built group II-VI semiconductor photodetector has good photoelectric performance. The method for preparing the group II-IV semiconductor film on the flexible substrate provided by the invention is simple in technology and low in cost.

The invention provides a cross-shaped small organic molecule hole transport material and a preparation method. The preparation method comprises the following steps: uniformly mixing 5-hexyl-5'-trimethyl-2,2'-bithiophene or 5-octyl-5'-trimethyl-2,2'-bithiophene with 3,3',5,5'-tetrabromo-2,2'-bithiophene in methylbenzene at a molar ratio of 1:(4-6); performing a reaction at the temperature of 90-120DEG C for 18-25h, cooling to room temperature and adding silica gel powder for spin drying; separating and purifying a coarse product after spin drying with dichloromethane and n-hexane at a ratio of1:(5-20) as an eluting agent to obtain the cross-shaped small organic molecule hole transport material which is shown in the structural formula I as shown in the specification or the structural formula II as shown in the specification. Due to the 'x' rotary cross-shaped structure of the hole transport material, the excessive crystallization can be effectively inhibited, so that a thiophene derivative have good solubility and excellent hole transport performance under the condition that no excessive alkyl substituted units are introduced; the current density and the photoelectric conversion efficiency of a device can be greatly improved after the cross-shaped small organic molecule hole transport material is applied in an all-inorganic perovskite solar cell.

The invention discloses an organic small molecule hole transport material based on spiro[fluorene-9,9'-xanthene]-based and a preparation method and application thereof, and the organic small moleculehole transport material takes spiro[fluorene-9,9'-xanthene] as a core, and has good amorphous form and excellent dissolving property; besides, different numbers of thiophene groups are added into sidechains, so that the material is endowed with more excellent physical and photoelectric properties through the characteristics of high electron density, excellent carrier transport capacity, controllable optical and electrochemical properties and the like; in addition, due to modification of a terminal alkyl chain, the dissolvability is improved, the film-forming property of the material is facilitated, and the material is easier to process; meanwhile, the synthesis is simple, raw materials are easy to obtain, and cost is low. The organic small molecule hole transport material is applied to anall-inorganic perovskite solar cell, and the cell efficiency of the organic small molecule hole transport material is higher than the original cell efficiency, which shows that the organic small molecule hole transport material has practical significance for improving the efficiency of the all-inorganic perovskite solar cell.

The invention relates to the technical field of optical fiber communication transmission, in particular to a lithium niobate optical modulator, preparation and encapsulating method thereof aiming at solving the problems that size of a lithium niobate waveguide chip is large, a preparation technology is complex, an encapsulating technology is simple and crude. The technical key point is that hydrogenated amorphous silicon is used on a lithium niobate base to prepare waveguide structure, high refraction index of the amorphous silicon is used, the size of the waveguide can be effectively reduced,and distance between metal electrodes on the lithium niobate optical modulator is reduced, so that a required modulation voltage is low, photoelectric effect of a device is maximized under the premise of guaranteeing the waveguide size through adjusting the thickness of the hydrogenated amorphous silicon, radio frequency matching can be well guaranteed through controlling the thickness of silicondioxide and the metal electrodes, and a fiber interface connected with outside world is achieved through a waveguide line penetrating a waveguide layer. Occurrence probability of electric leakage phenomenon can be lowered through the perfect encapsulating technology, and occurrence of short circuit phenomenon caused by humid environment is avoided.

The invention provides a super-doped silicon thin film solar cell and a manufacturing method thereof, and relates to the technical field of solar cells. The manufacturing method comprises the steps: performing electrode masking: performing electrode masking on a silicon-based solar cell serving as a substrate, and then putting the silicon-based solar cell into a vacuum chamber of a vacuum film plating machine; vacuumizing: vacuumizing the vacuum chamber; film plating: evaporating silicon particles and transition metal powder or particles to form a mixed film with the thickness of 0.05-1 [mu]m on the substrate; and doping: after the substrate is cooled, taking out the substrate, putting the substrate into a protective atmosphere, and melting the mixed film by using high-repetition-frequency nanosecond laser to form an equal-interval strip-shaped semiconductor doped layer. The invention also provides the super-doped silicon thin film solar cell which is prepared by using the method. The manufacturing method has the beneficial effects that: the solar cell capable of generating a photoelectric effect on a full spectrum can be manufactured; and transition metal is used as doped impurities to carry out silicon super-doping, and the photoelectric conversion efficiency is improved.