Lithium niobate optical modulator, preparation and encapsulating method thereof

An optical modulator and packaging method technology, which is applied in the directions of light guides, optics, instruments, etc., can solve the problems of simple packaging process, complex preparation process, large size of lithium niobate waveguide chips, etc., so as to save the processing process, simplify the process, enhance the The effect of the photoelectric effect

Inactive Publication Date: 2019-04-12
SUZHOU JUZHEN PHOTOELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Therefore, the technical problem to be solved by the present invention is to overcome the defects of the lithium niobate waveguide chip in the prior art that the size is relatively large, the preparation process is relatively complicated, and the packaging proce

Method used

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  • Lithium niobate optical modulator, preparation and encapsulating method thereof
  • Lithium niobate optical modulator, preparation and encapsulating method thereof
  • Lithium niobate optical modulator, preparation and encapsulating method thereof

Examples

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Embodiment 1

[0043] The lithium niobate optical modulator described in this embodiment will be described in detail below with reference to the accompanying drawings. Such as figure 1 , figure 2 and image 3 As shown, the lithium niobate optical modulator described in this embodiment includes a waveguide chip, a protective material 5 coated on the upper end of the waveguide chip, and a waveguide 7 connected to an external optical fiber; the waveguide chip includes a lithium niobate substrate 1, and an amorphous silicon layer 2, a silicon dioxide layer 3, and a metal electrode 4 sequentially arranged on the lithium niobate substrate 1; wherein, the thickness of the amorphous silicon layer 2 is smaller than that of the lithium niobate substrate 1 thickness, the lithium niobate substrate 1 and the amorphous silicon layer 2 together form a waveguide 12; an electrode filling area is formed on the silicon dioxide layer 3, and the metal electrode 4 is arranged in the electrode filling area ; T...

Embodiment 2

[0051] A preparation method of a lithium niobate optical modulator described in this embodiment, such as Figure 5 shown, including the following steps:

[0052] S1: Depositing a layer of amorphous silicon material on the surface of the lithium niobate substrate 1 to form an amorphous silicon layer 2, the thickness of the amorphous silicon layer 2 is smaller than the thickness of the lithium niobate substrate 1;

[0053] S2: performing photolithography development and etching stripping on the amorphous silicon layer 2 to form a waveguide 12;

[0054] S3: depositing a layer of silicon dioxide on the waveguide 12 to form a silicon dioxide layer 3;

[0055] S4: Etching on the silicon dioxide layer 3 to obtain electrode filling regions;

[0056] S5: filling the electrode filling area with metal to form the metal electrode 4 .

[0057] In this embodiment, amorphous silicon is selected as the high refractive index material to form the waveguide 12 on the lithium niobate substrate...

Embodiment 3

[0072] This embodiment is based on the packaging method of a lithium niobate optical modulator described in Embodiment 1, comprising the following steps:

[0073] Coating a protective material 5 on the waveguide chip;

[0074] setting a protective structure 6 on the outer surface of the protective material 5 on the metal electrode 4;

[0075] An insulating material is wrapped on the waveguide 7 .

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Abstract

The invention relates to the technical field of optical fiber communication transmission, in particular to a lithium niobate optical modulator, preparation and encapsulating method thereof aiming at solving the problems that size of a lithium niobate waveguide chip is large, a preparation technology is complex, an encapsulating technology is simple and crude. The technical key point is that hydrogenated amorphous silicon is used on a lithium niobate base to prepare waveguide structure, high refraction index of the amorphous silicon is used, the size of the waveguide can be effectively reduced,and distance between metal electrodes on the lithium niobate optical modulator is reduced, so that a required modulation voltage is low, photoelectric effect of a device is maximized under the premise of guaranteeing the waveguide size through adjusting the thickness of the hydrogenated amorphous silicon, radio frequency matching can be well guaranteed through controlling the thickness of silicondioxide and the metal electrodes, and a fiber interface connected with outside world is achieved through a waveguide line penetrating a waveguide layer. Occurrence probability of electric leakage phenomenon can be lowered through the perfect encapsulating technology, and occurrence of short circuit phenomenon caused by humid environment is avoided.

Description

technical field [0001] The invention relates to the technical field of optical fiber communication transmission, in particular to a lithium niobate optical modulator and a preparation and packaging method thereof. Background technique [0002] The main function of the optical modulator is to convert meaningless continuous light waves into high-frequency optical signals carrying effective information. Due to the high photoelectric effect of lithium niobate materials, lithium niobate optical modulators have become the most widely used optical modulators in existing systems. The main component of a lithium niobate optical modulator is a lithium niobate waveguide chip, and a lithium niobate optical modulator can be obtained by performing a certain packaging process on the lithium niobate waveguide chip. [0003] The existing lithium niobate waveguide chips are mainly prepared by titanium doping, etc., but due to the low contrast of the refractive index, the waveguide size of th...

Claims

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Application Information

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IPC IPC(8): G02F1/035G02F1/03G02B6/12
CPCG02B6/12G02B2006/12061G02B2006/12142G02B2006/12176G02F1/0316G02F1/035
Inventor 朱忻帕勒布·巴特查亚和田修
Owner SUZHOU JUZHEN PHOTOELECTRIC
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