Anti-reflecting layer with progressive refractivity and manufacture method of anti-reflecting layer

An anti-reflection layer and refractive index technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of inability to achieve all-round, loss of anti-reflection function, and reduction of anti-reflection function.

Inactive Publication Date: 2013-03-27
晶扬科技股份有限公司
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Problems solved by technology

The disadvantage of this 1/4 wavelength anti-reflection method is that it is difficult to obtain or manufacture materials with a suitable refractive index, and the thickness of the anti-reflection layer is closely related to the wavelength of light. Once the thickness is determined, the anti-reflection layer can only target a certain wavelength. For the light of other colors and wavelengths, the

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  • Anti-reflecting layer with progressive refractivity and manufacture method of anti-reflecting layer
  • Anti-reflecting layer with progressive refractivity and manufacture method of anti-reflecting layer
  • Anti-reflecting layer with progressive refractivity and manufacture method of anti-reflecting layer

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[0021] The present invention provides an anti-reflection layer with a progressive index of refraction and a manufacturing method thereof to eliminate the reflection of light on the interface. Furthermore, when applied to LEDs, it can enhance the light extraction efficiency and is applied to solar panels (Solar Cells). On the surface, to reduce the ability of sunlight reflection, increase the incidence of light and enhance the photoelectric effect.

[0022] The present invention provides an anti-reflection layer with a progressive refractive index, which is characterized in that the anti-reflection layer is deposited by a first material and a second material, and the refractive index (n eff ) Is the refractive index of the first material (n 1 ) And the refractive index of the second material (n 2 ) Shows a gradual change. The refractive index of each thickness of the reflective layer conforms to an effective medium law (Effective Medium Theory), n eff ={n 1 2 f+n 2 2 (1-f)) 1 / 2 ,...

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Abstract

The invention provides an anti-reflecting layer with progressive refractivity and a manufacture method of the anti-reflecting layer so as to eliminate reflecting action of light on interfaces. The anti-reflecting layer with the progressive refractivity is characterized in that the anti-reflecting layer is formed by depositing a first material and a second material, and the refractivity (neff) of the anti-reflecting layer is changed progressively along with the thickness between refractivity (n1) of the first material and refractivity (n2) of the second material, wherein the refractivity of each thickness of the anti-reflecting layer is accordant with an effective media law and satisfies the equation that neff={n12f+n22(1-f)}1/2, and the f refers to filling ratio of the first material of the anti-reflecting layer.

Description

technical field [0001] The invention relates to an anti-reflection layer and its manufacturing method, in particular to an anti-reflection layer with progressive refractive index and its manufacturing method. Background technique [0002] In recent years, light-emitting diodes (LEDs) have gradually replaced traditional incandescent or fluorescent bulbs as a lighting source. Due to the high brightness and high power characteristics of gallium nitride (GaN) blue light diodes, GaN-based semiconductors have been widely used in the industry as the main material for white LED light. With the rapid development of technology, the luminous efficiency (Internal Quantum Efficiency) of the internal light-emitting layer of GaN material has been refined to more than 90%, while the external light-emitting efficiency (External Quantum Efficiency) of the LED surface layer is less than 10%. That is to say, only part of the light from the LED can shine out, and most of the light that reaches ...

Claims

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Application Information

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IPC IPC(8): H01L33/46H01L33/00
Inventor 王金贤
Owner 晶扬科技股份有限公司
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