Solar cell based on double perovskite material and preparation method of solar cell

A solar cell, double perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of tin-based perovskite instability, poor environment, water stability and air stability, etc. The effect of chemical production, improving photoelectric response and good stability

Pending Publication Date: 2020-11-24
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the common problems of organic-inorganic hybrid perovskite solar cells are poor water and air stability and environmental problems caused by the toxic element lead.
But the tin element in the traditional ABX 3 The structure shows +2 valence, which is easily oxidized to +4 valence, so this ABX 3 The structure of tin-based perovskite is extremely unstable, leading to large problems in the stability of solar cells

Method used

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  • Solar cell based on double perovskite material and preparation method of solar cell
  • Solar cell based on double perovskite material and preparation method of solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Example 1: Preparation of transparent conductive substrate using indium tin oxide ITO, electron transport layer using [6,6]-phenyl C 61 Methyl butyrate PCBM, perovskite light absorbing layer using Cs 2 AgInBr 6 , the hole transport layer uses 3,4-ethylenedioxythiophene: polystyrene sulfonate PEDOT:PSS, and the top metal electrode uses silver Ag perovskite solar cells.

[0034] In the first step, the transparent conductive substrate ITO is selected and pretreated.

[0035] 1.1) Select indium tin oxide ITO transparent material as the conductive substrate;

[0036] 1.2) Ultrasonic cleaning the transparent conductive substrate with Decon-90 glass cleaning solution, deionized water, acetone, and isopropanol solution at a temperature of 50°C for 20 minutes each;

[0037] 1.3) Blow dry the glass surface of the transparent conductive substrate cleaned ultrasonically with nitrogen, and use ultraviolet ozone UV-zone to treat for 30 minutes to obtain the pretreated substrate; ...

Embodiment 2

[0050] Example 2: Preparation of transparent conductive substrate using fluorine-doped tin oxide FTO, electron transport layer using titanium dioxide TiO 2 , the perovskite light absorbing layer adopts Cs 2 AgBr x I 6-x , the hole transport layer uses 2,2,7,7-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9-spiro-OMeTAD, and the top metal electrode uses Gold Au perovskite solar cells.

[0051] Step 1, select the transparent conductive substrate FTO, and perform pretreatment on it.

[0052] 1a) Select fluorine-doped tin oxide FTO transparent material as the conductive substrate;

[0053] 1b) Pretreatment of the conductive substrate

[0054] The specific implementation of this step is the same as 1.1) and 1.2) of Embodiment 1.

[0055] Step 2, prepare TiO 2 electron transport layer.

[0056] 2a) 0.2mol / L titanium dioxide TiO 2 The solution was spin-coated on the fluorine-doped tin oxide FTO substrate at a speed of 4000rpm for 45s, and then annealed at a temperature of 125°C ...

Embodiment 3

[0074] Example 3: Preparation of transparent conductive substrate using fluorine-doped tin oxide FTO, electron transport layer using tin dioxide SnO 2 , the perovskite light absorbing layer adopts Cs 2 InSbBr 6 , the hole transport layer uses copper thiocyanide CuSCN, and the top metal electrode uses copper Cu perovskite solar cells.

[0075] In step A, the transparent conductive substrate FTO is selected and pretreated.

[0076] The specific implementation of this step is the same as step 1 of embodiment 2.

[0077] Step B, preparation of SnO for perovskite solar cells 2 electron transport layer.

[0078] B1) 1mL of 15% tin dioxide SnO 2 The solution was dissolved in 2 mL of deionized water to obtain a concentration of 5% tin dioxide SnO 2 solution;

[0079] B2) SnO with a concentration of 5% 2 The solution was spin-coated on the pretreated FTO substrate at a speed of 5000 rpm for 30 seconds, and then annealed at a temperature of 150° C. for 30 minutes to obtain an el...

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Abstract

The invention discloses a perovskite solar cell taking a double perovskite material as an absorption layer. The perovskite solar cell comprises a transparent conductive substrate, an electron transport layer, a double perovskite absorption layer, a hole transport layer and a metal electrode from bottom to top. The double perovskite adopts a semiconductor material with a molecular formula of A2BIBIIIX6, wherein A is one or more of K<+>, Rb<+> and Cs<+>, BI is one or more of Cu<+>, Ag<+>, Au<+>, Li<+>, Na<+>, K<+>, Rb<+>, Cs<+> and In<+>, and BIII is one or more of As<3+>, Bi<3+>, Rh<3+>, Sb<3+>, Cr<3+>, Co<3+>, Ga<3+>, Fe<3+>, Ru<3+>, In<3+>, Ir<3+>, Au<3+> and Y<3+>. Compared with an existing perovskite solar cell, the perovskite solar cell is high in stability, free of toxic elements andcapable of being used for communication, traffic photovoltaic systems and user solar energy.

Description

technical field [0001] The invention belongs to the technical field of electronic devices, and further relates to a perovskite solar cell, which can be used in communication photovoltaic systems, traffic photovoltaic systems and user solar power supplies. Background technique [0002] As a new type of solar cell, perovskite solar cells can be processed by the solution method, and can also be combined with the printing process, which greatly saves production costs. At the same time, perovskite solar cells are also light and thin, and can be deposited on flexible substrates. Traditional perovskite material MAPbI 3 It has very excellent photoelectric performance, its band gap is 1.55-1.6eV, wide light absorption range, long carrier migration distance, low exciton binding energy, and bipolar, not only can absorb light energy to generate photogenerated electrons Hole pairs, and can also play the role of transporting carriers, both electrons and holes can be transported. These ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K71/12H10K30/152H10K30/15H10K30/151H10K30/82H10K2102/00Y02E10/549Y02P70/50
Inventor 常晶晶林珍华王璐苏杰张进成郝跃
Owner XIDIAN UNIV
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