54results about How to "Improve photoelectric response" patented technology

The invention belongs to the technical field of nano titanium dioxide photoelectrochemistry and photocatalysis and particularly relates to a preparation method of a titanium dioxide nanotube thin film with visible-light activity. Raw materials used for preparing the titanium dioxide nanotube thin film comprise a metallic titanium sheet or a Ti thin film and carbon quantum dot solution. A direct-current regulated power supply is used for anode oxidization. A muffle furnace is used for heat treatment. The preparation method of the titanium dioxide nanotube thin film with visible-light activity specifically comprises the following steps of preparing a TiO2 nanotube array on the metallic Ti sheet or the Ti thin film by adopting an anode oxidation method, and after annealing treatment, preparing a TiO2 nanotube composite thin film with visible-light activity modified by carbon quantum dots by directly adopting a dipping assembling method, wherein the modification quantity of the carbon quantum dots is adjusted by controlling dipping time. The preparation method of the titanium dioxide nanotube thin film with visible-light activity has the advantages that the process is simple, any expensive equipment and high-cost or toxic drugs are not used, the principle of energy saving and emission reduction is satisfied and a new concept for the modification and the application of titanium dioxide is developed.

The invention discloses a S,S-dioxo-dibenzothiophene unit-containing electron donor polymer and a use thereof. The main chain of the S,S-dioxo-dibenzothiophene unit-containing electron donor polymer contains a S,S-dioxo-dibenzothiophene unit. Through Stille and Suzuki polymerization methods, a novel D-A structure conjugated polymer is constructed. The S,S-dioxo-dibenzothiophene unit has good flatness and high electronegativity. Through the S,S-dioxo-dibenzothiophene unit, the polymer has a deep HOMO energy level, strong intermolecular interaction, a high light-absorption coefficient, high mobility and high photoelectric response so that the related polymer has wide application prospects in solar cells or organic field effect transistors.

The invention discloses a total internal reflection structure-based graphene photoelectric detector and a preparation method thereof. The total internal reflection structure-based graphene photoelectric detector includes a surface electrode, a graphene layer, a glass sheet, refraction rate matching liquid and a prism which are arranged sequentially from top to bottom; and incident light is subjected to total internal reflection at the interface of the glass sheet and the graphene layer through the prism. The preparation method of the total internal reflection structure-based graphene photoelectric detector includes the following steps that: graphene is transferred to clean glass; the electrode surface is manufactured on the graphene layer; and the glass sheet covered with the graphene is attached to the prism through the refraction rate matching liquid. According to the total internal reflection structure-based graphene photoelectric detector and the preparation method thereof of the invention, large-area graphene photoelectric detection can be realized based on interaction of light and the graphene under the total internal reflection structure, and photoelectric response of the graphene in a wide spectral range can be enhanced, and high photoelectric response speed of the graphene is reserved, and the photoelectric response of the detector has obvious polarization dependence on differently polarized light which enters the detector.

The invention belongs to the field of photoelectric materials, and discloses a Ti3C2Tx-TiO2 composite material and a preparation method and application thereof. The preparation method comprises the following steps: dispersing layered Ti3C2Tx Mxene powder into water and stirring, then adding a hydrogen peroxide solution, and carrying out a stirring reaction for 1-3 h at the temperature of 80-120 DEG C; and then carrying out ultrasonic treatment on the mixed solution after the reaction, washing and drying to obtain the Ti3C2Tx-TiO2 composite material. The mass volume ratio of the layered Ti3C2TxMxene powder to H2O2 is 1:(0.3-0.9) g/mL. According to the invention, the composite material with high photoelectric response is obtained by controlling the oxidation degree of Ti3C2Tx. The compositematerial has good photocurrent response and excellent stability and photocorrosion resistance, and can be used for preparing detection chips or sensors. The photoelectric sensor prepared by the method has excellent stability and repeatability.

The invention discloses a high-efficiency ternary organic solar cell which comprises a substrate, a cathode, a cathode modification layer, an active layer, an anode modification layer and an anode. The active layer includes a blend film of a polymer electron donor PBDB-T and two types of micro-molecular electron acceptors HF-PCIC and IEICO-4F. The morphology of the active layer is optimized via complementary absorption of the PBDB-T, HF-PCIC and IEICO-4F, especially IEICO-4F. The prepared ternary organic solar cell realizes excellent photoelectric response in the wide spectrum range of 300-1000nm, and compared with a binary organic solar cell based on PBDB-T:HF-PCIC, the short-circuit current density is improved by 7.2MA/cm2, and the highest power conversion efficiency PCE reaches 11.2% which is 8.82% higher than that of the binary cell. In addition, the ternary organic solar cell has a very low energy loss (0.59eV), so that the cell has a higher open-circuit voltage.

The invention relates to a high-performance perovskite/organic semiconductor heterojunction type photoelectric detector, and belongs to the technical field of semiconductor photoelectric devices. Thephotoelectric detector prepared via a lamination technology structurally comprises a transparent bottom electrode layer, an organic semiconductor and perovskite function layer and a top electrode layer successively from bottom to top; the organic semiconductor and perovskite function layer includes a cavity type organic semiconductor, perovskite and another cavity type organic semiconductor, or anelectronic type organic semiconductor, perovskite and another electronic organic semiconductor successively from bottom to to; the perovskite and organic semiconductor layer form two heterojunctions;and the top electrode is made of gold or silver. The photoelectric detector is wide in response spectrum and simple in structure, can make response to visible spectrums in full waveband, and has a voltage saturation characteristic, the working voltage is 0.7V, and influence of voltage noise on performance of the detector can be inhibited effectively.

The invention discloses a photoelectrochemical aptamer sensor and a preparation method and application thereof. The photoelectrochemical aptamer sensor comprises a conductive glass electrode, the surface of the reaction end of the conductive glass electrode is modified with a composite nano material, and an aptamer probe is self-assembled on the surface of the composite nano material; and the composite nano material is a gold nanoparticle modified sulfur hybrid hexagonal boron nitride nanosheet loaded with graphite phase carbon nitride. The preparation method comprises the step of sequentiallyloading the gold nanoparticle-modified graphite-phase carbon nitride-loaded sulfur hybrid hexagonal boron nitride nanosheet and the aptamer probe on the surface of the reaction end of the conductiveglass electrode. The sensor has the advantages of high stability, long service life, strong anti-interference capability, wide detection range, low detection limit and the like, the preparation methodis simple in process, safe, pollution-free and low in cost, and the sensor can be widely used for detecting pollutants in media such as water bodies and organisms, and has the advantages of high utilization rate, wide application range, high application value and the like.

The invention discloses a reduced graphene oxide film photoelectric detector comprising a reduced graphene oxide film and a surface electrode. The reduced graphene oxide film is a substrate-containingreduced graphene oxide film or a substrate-free reduced graphene oxide film. The surface electrode is a symmetric interdigital electrode, and is prepared through metal vapor plating on the reduced graphene oxide film. The preparation process of the invention is very simple, and the reduced graphene oxide film photoelectric detector obtained by the method has the characteristics of high response rate, controllable area and wide spectrum detection at normal temperature and at atmospheric pressure. It is found that a self-supporting substrate-free reduced graphene oxide film can be obtained through a very simple substrate stripping method, and the self-supporting substrate-free reduced graphene oxide film photoelectric detector prepared by metal vapor plating has enhanced photoelectric response property and high light absorbance.

The invention discloses a MoS2 photoelectric detector based on Fe-doped GaN substrate and a manufacturing method. The method includes the following steps: a MoS2 film layer growing on the surface of a Fe-doped GaN substrate; and a SiO2 layer growing on the surface of the MoS2 film layer, wherein two Au Ohmic contact electrodes are made on the MoS2 film layer and act as a source electrode and a drain electrode, and a schottky contact electrode is made on the MoS2 film layer and acts as a grid electrode. According to the invention, the photoelectric detector is made by making the MoS2 film layer on the Fe-doped GaN substrate, whereinthe Fe-doped is intended for ensuring semi-insulation of the substrate, and 2D MoS2 film layer is intended for achieving direct sufficient absorption and the separation and collection of current carriers, the band gap is varied by controlling the number of layers of the MoS2 film, such that the detection wave length of a detector is adjustable; the interface band offset formed by the Fe-doped GaN substrate and the MoS2 film layer, and the piezoelectric characteristics of the GaN can help to reduce the dark current of the detector and increase the photoelectric response of the detector.

The invention relates to the field of material chemistry, in particular to the technical field of photoelectrochemistry and photocatalysis, in particular to a preparation method for a manganese modified titanium dioxide nanotube to enhance a photoelectric response. The preparation method comprises the following basic steps that (1), grinding, cleaning and chemical polishing of a pure titanium sheet are carried out; 2), primary anodization in an ammonium fluoride, glycerol and aqueous solution system is carried out; 3), secondary anodization is carried out in an aqueous solution containing Mn(II) ions; and (4), heat treatment is carried out in an air atmosphere. The preparation method has the beneficial effects that operations are simple, the synergistic composite property between manganeseoxide and titanium dioxide is good, and good doping modification is carried out on titanium dioxide by manganese; and the photoelectrical response performance of a manganese-modified titanium dioxidenanotube array obtained by the preparation method to visible light is enhanced.

The invention discloses a composite-structure dual-absorption layer graphene detector and a fabrication process thereof. The detector comprises a silicon dioxide substrate, a graphene nanobelt, a metal electrode, a nanometer grating antenna, a metal quantum dot, a metal film annular belt and a transparent adhesive. A sub-wavelength nanometer grating antenna is used for coupling and conducting a light beam and simultaneously generating plasma resonance so as to improve receiving efficiency and improving photoelectric response, the metal quantum dot is used for simulating surface plasmon polariton and generating surface plasmon resonance to improve photoelectric response, and the metal film annular belt is used for focusing an incident light beam so that incident light energy acts on a detection region in a concentrated way and the photoelectric response is improved. With a front-surface and back-surface detector structure, the front surface and the back surface are used for simultaneously receiving and converting to photocurrents, the receiving area is effectively expanded, and the photoelectric response is further improved; and the corresponding fabrication process is simple to operate and is high in reliability. By the detector, the technical bottleneck of graphene weak photon energy detection is favorably broken through.

The invention provides a preparation method and application of an irradiation modified bismuth vanadate aptamer photoelectrochemical sensor. According to the invention, BiVO4 is subjected to infraredirradiation treatment, such that an external bias voltage-adjustable enhanced and inhibited sensor is realized for the first time. The characteristics of high sensitivity and high resolution are realized; meanwhile, the two sensors in the same system can detect tumor markers which are difficult to oxidize and easy to oxidize. The sensitivity of a PEC aptamer sensor designed by the invention is thesensor with the highest sensitivity at present, so that the sensor designed by the invention plays a greater role in PSA early accurate screening, prostate cancer treatment process and postoperativedynamic detection. Meanwhile, the sensor also has high-sensitivity detection characteristics on other cancer markers AFP and CEA. In addition, the two sensors designed by the invention have the advantages of quick response, simplicity in operation, low detected background signals and the like.

The invention discloses a Tm<3+> single-doped three-photon infrared quantum cutting microcrystalline glass as well as a preparation method and an application thereof. The microcrystalline glass is formed with LaF3 nanocrystal-containing oxofluorogermanate transparent microcrystalline glass as a matrix and Tm<3+> as activating agent ions, and the composition, in a molar ratio, of the microcrystalline glass is 50GeO2-20Al2O3-15LaF3-15LiF-xTmF3, wherein x is greater than or equal to 0.05 and less than or equal to 1.00. During preparation, GeO2, Al2O3, LaF3, LiF and TmF3 are taken as raw materials, and weighing and proportioning the raw materials according to the nominal composition 50GeO2-20Al2O3-15LaF3-15LiF-xTmF3 in the molar ratio, wherein x is greater than or equal or 0.05 and less than or equal to 1.00, and then taking the method of melt quenching in combination with subsequent heat treatment. The microcrystalline glass is capable of effectively absorbing 455-485nm blue light photons to excite the Tm<3+> ions to the energy state 1G4, and also capable of emitting three infrared photos in succession with 3H4 and 3F4 as intermediate energy states. The quantum efficiency of the Tm<3+> single-doped three-photon infrared quantum cutting microcrystalline glass is calculated within the range from 1.59 to 1.61.

The invention provides a gallium oxide solar-blind ultraviolet detector which comprises a substrate layer, a gallium oxide layer, a passivation layer, a ferroelectric layer and an electrode layer, wherein the gallium oxide layer is arranged on the surface of the substrate layer, the passivation layer is arranged on the surface of the gallium oxide layer, the ferroelectric layer is arranged on the surface of the passivation layer, the ferroelectric layer covers part of the passivation layer, and the electrode layer covers the gallium oxide layer. According to the novel gallium oxide solar-blind ultraviolet detector designed by the invention, the ferroelectric layer is introduced, a local field formed by spontaneous polarization of a ferroelectric material is utilized, and the energy band structure of the gallium oxide layer covered by the ferroelectric layer is regulated and controlled, so that the construction of a homogeneous PN/NPN/PNP junction of the gallium oxide layer is realized, the photoelectric gain of the detector and the separation efficiency of photon-generated carriers are improved, and then the solar-blind ultraviolet photoelectric detector with low power consumption, high reliability and high sensitivity is obtained.

The invention relates to a micro/nano structure cadmium sulfide/aniline oligomer composite material preparation method, which comprises: preparing a micro/nano structure cadmium sulfide material through a hydrothermal method, dissolving the micro/nano structure cadmium sulfide and an aniline oligomer in an organic solvent, completely mixing, forming a micro/nano structure cadmium sulfide/aniline oligomer composite material dispersion liquid by using pi-pi stacking and electrostatic interaction, and removing the solvent to obtain the composite material. According to the present invention, the micro/nano structure cadmium sulfide/aniline oligomer composite material can be prepared by using the method; the method is economical and effective, and has universal applicability; and the prepared composite material has high capacitance and significantly-improved photoelectric response performance compared to the single micro/nano structure cadmium sulfide and the single aniline oligomer.

The invention discloses a full-oxide lead-free ferroelectric photovoltaic device with a sandwich structure and a preparation method thereof. The photovoltaic device comprises a substrate, wherein thesubstrate is covered with a BFO layer, the BFO layer is covered with an ITO layer, and the BFO layer is a BiFeO3-delta film which grows in an epitaxial mode. The photovoltaic device is advantaged in that oxygen vacancy doping is ingeniously utilized to increase light absorption efficiency of a ferroelectric layer, and the built-in potential caused by the work function difference between the upperelectrode and the lower electrode is utilized to cooperate with the ferroelectric depolarization field, and thereby separation of photo-induced electron hole pairs is effectively promoted, and photoelectric conversion performance of the device is improved.

The invention discloses a self-selective modified complementary photosynaptic transistor and a preparation method thereof, and belongs to the field of synaptic devices applied to neuromorphic calculation. According to the photosynaptic device, porphyrin with a high photosensitive characteristic and a fence silicon nanowire system with a good low-dimensional transport characteristic are combined, and enrichment of porphyrin on silicon nanowires is realized by utilizing the hydrophilic-hydrophobic difference of silicon nitride and silicon oxide, so that the sensitivity of the photosynaptic device is improved. In addition, aiming at the characteristic that the existing photosynaptic device can only realize the enhancement characteristic or the inhibition characteristic, the photosynaptic characteristic with the complementary characteristic can be realized through the interaction between the porphyrin and the silicon nanowires with different doping types, so the photosynaptic device has the potential to be applied to a future artificial visual neural network.

The invention provides an In-doped CdS thin film, a preparation method thereof and a prepared CIGS battery. The preparation method comprises the following steps: (1) preparing a CIGS absorption layerthin film; (2) adding ammonia water and a thiourea solution into a cadmium nitrate solution, mixing, adding the CIGS absorption layer film prepared in the step (1), and heating in a water bath; (3) adding an In(NO3)3 solution into a constant-pressure funnel, diluting, dropwise adding the solution into the hydrothermal solution, and controlling the dropping speed to be 4 seconds per drop; and (4) after dropwise adding, obtaining the In-doped CdS film. According to the method, the In(NO3)3 solution is continuously dropwise added in the process of preparing a CdS buffer layer, the ratio of In toCd in the buffer layer is controlled by adjusting the concentration and the dropping speed of In ions in the solution, and the flat and compact In-doped CdS film is prepared. The photoelectric conversion efficiency of the CIGS battery using the In-doped CdS film as the buffer layer is improved from 13.43% to 16.39%.