Full-oxide lead-free ferroelectric photovoltaic device with sandwich structure and preparation method thereof

A ferroelectric photovoltaic and oxide technology, which is applied in chemical instruments and methods, photovoltaic power generation, electrical components, etc., can solve the problems of reducing photovoltage and restrictions on the use of ferroelectric materials, so as to reduce recombination, improve photoelectric conversion performance, effect of promoting separation

Inactive Publication Date: 2019-12-31
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Ferroelectric materials with high electrical conductivity pave the way for obtaining high photocurrent, but the appearance of high conductance reduces the photovoltage, which limits the use of ferroelectric materials in photovoltaic devices

Method used

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  • Full-oxide lead-free ferroelectric photovoltaic device with sandwich structure and preparation method thereof
  • Full-oxide lead-free ferroelectric photovoltaic device with sandwich structure and preparation method thereof
  • Full-oxide lead-free ferroelectric photovoltaic device with sandwich structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] 1. Base cleaning

[0042] The Nb:STO substrate material was washed with a neutral detergent, then rinsed with deionized water, and then the substrate material was placed in acetone, absolute ethanol and deionized water for 15 minutes and then dried with high-purity nitrogen gas.

[0043] 2. Preparation of BFO layer

[0044] 1) Prepare precursor solution

[0045] Bi(NO 3 ) 3 ∙5H 2 O solid powder was added to glacial acetic acid (CH 3 COOH) (Bi: glacial acetic acid molar ratio is 1:8), continuously stirred on a magnetic stirrer for 8 h, and kept the temperature at 40-50 °C until the solution was a transparent solution, and the Bi(NO 3 ) 3 ∙5H 2 Fe(NO 3 ) 3 ∙9H 2 O was added to the above solution, and continuously stirred on a magnetic stirrer for 2h until the Fe(NO 3 ) 3 ∙9H 2 After O is completely dissolved. Then add polyethylene glycol 20000, polyethylene glycol 400 and citric acid according to the molar ratio of bismuth ferrite: polyethylene glycol 20000:...

Embodiment 2

[0058] The device is prepared according to the method of Example 1, the difference is: when preparing the BFO layer, the temperature in the furnace during the heat treatment N 2 The flow rate is 0.1 L / min.

[0059] The BFO in the obtained device has good epitaxial growth, and the crystallinity of the BFO layer is good. Using the method of Example 1 to test the current and voltage performance of the device under light conditions, the open circuit voltage is 0.74 V, and the short circuit current is 5.2 mA / cm 2 , the photoelectric conversion efficiency reaches 1.4%.

Embodiment 3

[0061] Prepare the device according to the method of Example 1, the difference is: when preparing the BFO layer, the first layer of film is thrown off at a speed of 7000rpm, and the time is 2 minutes; the second to third layer of film is thrown off at a speed of 5000rpm, and the time is 1 Minutes, other layers of film are flung at a speed of 6000rpm, and the time is 1 minute.

[0062] The BFO in the obtained device has good epitaxial growth, and the crystallinity of the BFO layer is good. Adopt the method of embodiment 1 to test the current-voltage performance of device under light condition, its open circuit voltage is 0.85 V, and short circuit current is 5.6 mA / cm 2 , the photoelectric conversion efficiency reaches 1.8%.

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Abstract

The invention discloses a full-oxide lead-free ferroelectric photovoltaic device with a sandwich structure and a preparation method thereof. The photovoltaic device comprises a substrate, wherein thesubstrate is covered with a BFO layer, the BFO layer is covered with an ITO layer, and the BFO layer is a BiFeO3-delta film which grows in an epitaxial mode. The photovoltaic device is advantaged in that oxygen vacancy doping is ingeniously utilized to increase light absorption efficiency of a ferroelectric layer, and the built-in potential caused by the work function difference between the upperelectrode and the lower electrode is utilized to cooperate with the ferroelectric depolarization field, and thereby separation of photo-induced electron hole pairs is effectively promoted, and photoelectric conversion performance of the device is improved.

Description

technical field [0001] The invention relates to a sandwich structure full oxide lead-free ferroelectric photovoltaic device and a preparation method thereof, belonging to the technical field of lead-free ferroelectric photovoltaic devices. Background technique [0002] Recently, semiconducting ferroelectric oxides with perovskite structures have received great attention as they can be used as photoactive layers, inspired by the rapid increase in PCE (up to 23.7%) similar to lead halide perovskites. All-oxide inorganic ferroelectric photovoltaics (PV) help to overcome the most enduring challenges in current photovoltaic technology: improving power conversion efficiency (PCE) and reducing costs through stable and environmentally friendly components, presumably gaining potential beyond the Shockley-Queisser limit PCE. It is worth noting that this metal oxide has the advantages of high stability under ambient conditions and low preparation cost. However, most conventional ferr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/04H01L31/18C01G49/00
CPCC01G49/0081H01L31/0321H01L31/04H01L31/18Y02E10/50Y02P70/50
Inventor 杨锋刘芬林延凌季凤岐岳炳臣
Owner UNIV OF JINAN
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