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Preparation method and application of irradiation modified bismuth vanadate aptamer photoelectrochemical sensor

A kind of bismuth vanadate, photoelectrochemical technology, applied in the field of photoelectrochemistry, can solve the problems of cumbersome probe fixation, large sensor background signal, poor photoelectric performance, etc., to reduce the recombination of electrons and holes, high sensitivity and resolution , Improve the corresponding effect of photoelectric

Active Publication Date: 2020-10-09
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, there are still many problems in photoelectrochemical biosensors at present, such as the poor photoelectric performance of the photoanode material, which leads to a large background signal of the sensor, the poor stability of the material makes it difficult to realize the reuse of the photoanode, and the probe fixation is cumbersome and easy to introduce artificial Second, to achieve high-resolution dynamic monitoring of tumor markers, which puts forward higher requirements for the sensitivity, resolution and stability of the sensor

Method used

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  • Preparation method and application of irradiation modified bismuth vanadate aptamer photoelectrochemical sensor
  • Preparation method and application of irradiation modified bismuth vanadate aptamer photoelectrochemical sensor
  • Preparation method and application of irradiation modified bismuth vanadate aptamer photoelectrochemical sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] In this example, the photoelectrochemical anodic oxidation method is used to prepare BiVO on the conductive substrate first. 4 thin film, using infrared light to irradiate BiVO 4 Get Laser-BiVO 4 thin films, and then respectively in BiVO 4 and Laser-BiVO 4 Modified g-C on the film 3 N 4 Thin films, using g-C 3 N 4 Surface π-π adsorption of thin films immobilizes DNA aptamers for prostate-specific antigen PSA on g-C 3 N 4 On the thin film, the PEC aptamer sensor BiVO for the detection of prostate specific antigen PSA was prepared 4 / g -C 3 N 4 / PSA enhanced aptasensor and Laser-BiVO 4 / g -C 3 N 4 / PSA inhibitory aptasensor, the specific preparation process is as follows:

[0049] (1) Clean the surface of the FTO conductive glass (2cm × 1cm × 0.2cm) with a piranha solution configured with a mixture of concentrated sulfuric acid and 30% hydrogen peroxide (mass ratio is 7:3), then rinse repeatedly with ultrapure water and Blow dry with high-purity nitrogen fo...

Embodiment 2

[0078] In this example, the same method as in Example 1 was used to prepare a PEC aptamer sensor for detecting carcinoembryonic antigen CEA——BiVO 4 / g -C 3 N 4 / CEA Enhanced Aptasensor and Laser-BiVO 4 / g -C 3 N 4 / CEA inhibitory aptasensor, the specific preparation process is as follows:

[0079] (1) Clean the surface of the FTO conductive glass (2cm × 1cm × 0.2cm) with a piranha solution configured with a mixture of concentrated sulfuric acid and 30% hydrogen peroxide (mass ratio is 7:3), then rinse repeatedly with ultrapure water and Blow dry with high-purity nitrogen for later use;

[0080] (2) Weigh 2.9g Bi(NO 3 ) 3 ·5H 2 O and 12g NaI were dissolved in 200mL ultra-pure water and fully stirred and mixed. After the solution was clarified and uniform, the pH of the solution was adjusted to 1.2. 2.85g p-benzoquinone was dissolved in 90mL ethanol, and the p-benzoquinone was fully dissolved by ultrasonication for 30min, and then Mix the two solutions, stir for 30 minu...

Embodiment 3

[0092] In this example, the same method as in Example 1 was used to prepare a PEC aptamer sensor for detecting alpha-fetoprotein AFP——BiVO 4 / g -C 3 N 4 / AFP enhanced aptasensor and Laser-BiVO 4 / g -C 3 N 4 / AFP inhibitory aptasensor, the specific preparation process is as follows:

[0093] (1) Clean the surface of the FTO conductive glass (2cm × 1cm × 0.2cm) with a piranha solution configured with a mixture of concentrated sulfuric acid and 30% hydrogen peroxide (mass ratio is 7:3), then rinse repeatedly with ultrapure water and Blow dry with high-purity nitrogen for later use;

[0094] (2) Weigh 2.9g Bi(NO 3 ) 3 ·5H 2 O and 12g NaI were dissolved in 200mL ultra-pure water and fully stirred and mixed. After the solution was clarified and uniform, the pH of the solution was adjusted to 1.2. 2.85g p-benzoquinone was dissolved in 90mL ethanol, and the p-benzoquinone was fully dissolved by ultrasonication for 30min, and then Mix the two solutions, stir for 30 minutes unt...

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Abstract

The invention provides a preparation method and application of an irradiation modified bismuth vanadate aptamer photoelectrochemical sensor. According to the invention, BiVO4 is subjected to infraredirradiation treatment, such that an external bias voltage-adjustable enhanced and inhibited sensor is realized for the first time. The characteristics of high sensitivity and high resolution are realized; meanwhile, the two sensors in the same system can detect tumor markers which are difficult to oxidize and easy to oxidize. The sensitivity of a PEC aptamer sensor designed by the invention is thesensor with the highest sensitivity at present, so that the sensor designed by the invention plays a greater role in PSA early accurate screening, prostate cancer treatment process and postoperativedynamic detection. Meanwhile, the sensor also has high-sensitivity detection characteristics on other cancer markers AFP and CEA. In addition, the two sensors designed by the invention have the advantages of quick response, simplicity in operation, low detected background signals and the like.

Description

technical field [0001] The invention belongs to the field of photoelectrochemistry; in particular, it relates to a preparation method and application of an irradiation-modified bismuth vanadate aptamer photoelectrochemical sensor. Background technique [0002] Semiconductor photoelectrochemical biosensor is a newly emerging method, which inherits the advantages of electrochemical bioanalysis, and at the same time has higher sensitivity. In addition, tests with direct current readouts are generally simpler, cheaper, and easier to miniaturize than optical instruments, and thus hold greater promise for early screening and dynamic monitoring. [0003] However, there are still many problems in photoelectrochemical biosensors at present, such as the poor photoelectric performance of the photoanode material, which leads to a large background signal of the sensor, the poor stability of the material makes it difficult to realize the reuse of the photoanode, and the probe fixation is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/26G01N27/327G01N27/36
CPCG01N27/26G01N27/3278G01N27/36
Inventor 补钰煜李阳敖金平戴显英
Owner XIDIAN UNIV
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