Preparation method of heterojunction based on heterojunction for high-efficiency photodetector

Abstract

This application relates to a heterojunction-based high-efficiency photodetector and a method for preparing the heterojunction, specifically, to the field of photodetectors; the photodetector includes: an electrolyte tank, a reference electrode, a counter electrode, and a heterojunction-based The working electrode of the application; because the tin disulfide structure on the bismuth series compound film in the heterojunction of the photodetector of the present application is arranged vertically, then makes the tin disulfide structure have larger specific surface area, and forms with the bismuth series compound film Van der Waals heterojunction, which in turn enables the separation and transmission of photogenerated carriers to be accelerated during photoelectric detection, thereby improving the photoelectric response of the photodetector of the present application, and thus enabling the detection of the photodetector of the present application Accuracy and sensitivity are greatly improved, so that the photodetector of the present application can be applied in application environments requiring high sensitivity and high accuracy.

Description

technical field [0001] The present application relates to the field of photodetectors, in particular, to a heterojunction-based high-efficiency photodetector and a method for preparing the heterojunction. Background technique [0002] Photodetection, the process of converting optical signals into electrical signals, plays a vital role in technological applications such as sensing, communication, and spectroscopy. The transition metal dichalcogenides in the prior art have higher carrier mobility, stronger light-matter interaction and larger specific surface area, and have faster electron-hole pair separation and transport efficiency, Suitable for PEC type photodetectors. [0003] However, due to the influence of the structure or material of the photodetector in the prior art, the photoelectric performance of the photodetector in the prior art is poor, and the photoelectric response is low, which makes the accuracy of the photodetector in the prior art And the sensitivity is...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a heterojunction-based high-efficiency photodetector and a method for preparing the heterojunction to solve the problem of photodetectors in the prior art due to structural or material problems. The impact of the photodetector in the prior art makes the photoelectric performance of the photodetector poor, and the photoelectric response is low, and then makes the photodetector in the prior art insufficient in accuracy and sensitivity, and is difficult to apply in applications requiring high sensitivity and high accuracy problems in the application environment

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