A kind of metal porphyrin complex and its preparation method and application

A technology of metalloporphyrins and complexes, which is applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components, etc., can solve the problems of limited carrier transport capacity and affect the performance of optoelectronic materials, and improve the carrier transport capacity , Significant technical progress, improve the effect of photoelectric response

Inactive Publication Date: 2017-07-18
SHANGHAI INST OF TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned technical problems in the prior art, the present invention provides a kind of new metal porphyrin complex and its preparation method and application, and described this new metal porphyrin complex and its preparation method and application solve The limited carrier transport capacity in the multilayer thin film optoelectronic devices in the prior art affects the technical problems of optoelectronic material performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of metal porphyrin complex and its preparation method and application
  • A kind of metal porphyrin complex and its preparation method and application
  • A kind of metal porphyrin complex and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] 1) Synthesis of 5,10,15,20-tetra(4-isocyanatopropyltriethoxysilane) cobalt porphyrin complex

[0022] Weigh 20 mg of 5,10,15,20-tetrahydroxyphenylporphyrin cobalt into a 100 mL three-necked flask, add 40 mL of anhydrous tetrahydrofuran and 15 mL of triethylamine, and stir to fully dissolve it. Then, add 20 mL of anhydrous tetrahydrofuran (pre-dissolved in it with 40.3 mL of 3-isocyanatopropyltriethoxysilane) to the above solution dropwise, and continue to react in an oil bath at 80°C for 4 hours to obtain axially coordinated 5,10,15,20-Tetra(4-isocyanatopropyltriethoxysilane) cobalt porphyrin complex.

[0023] 2) Preparation method of photoelectric film

[0024] To the tetrahydrofuran solution of the 5,10,15,20-tetra(4-isocyanatopropyltriethoxysilane) cobalt porphyrin complex, 80 μL of 0.1M hydrochloric acid solution was added, the temperature was raised to 60° C., and the temperature was kept for 4 hours. The obtained solution is coated on a glass sheet, FTO, ITO, or silico...

Embodiment 2

[0026] 1) Synthesis of 5,10,15,20-tetra(4-isocyanatopropyltriethoxysilane) iron porphyrin complex

[0027] Weigh 40 mg of 5,10,15,20-tetrahydroxyphenylporphyrin iron into a 200 mL three-necked flask, add 80 mL of anhydrous tetrahydrofuran and 30 mL of triethylamine, and stir to fully dissolve it. Then, add 40 mL of anhydrous tetrahydrofuran (pre-dissolved in it with 80 mL of 3-isocyanatopropyltriethoxysilane) to the above solution dropwise, and continue to react in an oil bath at 80°C for 4 hours to obtain an axially coordinated 5 ,10,15,20-Tetra(4-isocyanatopropyltriethoxysilane) iron porphyrin complex.

[0028] 2) Preparation method of photoelectric film

[0029] To the tetrahydrofuran solution of the 5,10,15,20-tetra(4-isocyanatopropyltriethoxysilane) iron porphyrin complex, 80 μL of 0.1M hydrochloric acid solution was added, the temperature was raised to 60° C., and the temperature was kept for 4 hours. The obtained solution is coated on a substrate such as FTO or ITO, and the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A kind of new metalloporphyrin complex of the present invention, its structural formula is as follows: also provide the preparation method of above-mentioned metalloporphyrin complex, 5,10,15,20-tetrakis (4-hydroxyphenyl) metalloporphyrin The morphine complex is dissolved in tetrahydrofuran, 3-isocyanatopropyltriethoxysilane is added, reflux reaction is carried out under the catalysis of triethylamine, and then hydrochloric acid solution is added to obtain the above-mentioned metalloporphyrin complex. Also provided is a preparation method of a porphyrin composite photoelectric thin film, adding hydrochloric acid solution to the tetrahydrofuran solution of the above-mentioned metalloporphyrin complex compound for reaction, and coating the obtained solution on a substrate to obtain a porphyrin composite photoelectric thin film . The invention realizes carrier transmission between multilayer self-assembled organic thin film layers, thereby improving the photoelectric response of the organic thin film.

Description

Technical field [0001] The field of organic photoelectric materials of the present invention relates to a metal porphyrin complex, in particular to a new metal porphyrin complex and a preparation method and application thereof. Background technique [0002] Organic photoelectric materials have great application prospects in photovoltaic solar cells, OLEDs, organic field effect transistors, biosensors and other fields, and have become a hot spot in the field of new materials. Compared with inorganic optoelectronic materials, organic optoelectronic materials have significant advantages, such as low density, low price, and easy processing, but they also have some disadvantages. For example, in the field of organic photovoltaic cells, the photoelectric conversion efficiency is low. In the field of optoelectronic materials, whether in the field of photovoltaic cells or OLED, optoelectronic materials are prepared in the form of multi-layer films. However, in the traditional multilaye...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C07D487/22H01L51/46H01L51/54
CPCC07D487/22H10K85/331H10K50/14Y02E10/549
Inventor 李向清袁兵张超葛日月康诗钊秦利霞
Owner SHANGHAI INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products