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Self-selective modified complementary photosynaptic transistor and preparation method thereof

A complementary, transistor technology, applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electro-solid-state devices, etc., can solve the problems of high cost, large hardware cost, disadvantageous use of artificial visual neural network, etc., to achieve enhanced photoelectric response, High sensitivity effect

Pending Publication Date: 2021-06-22
PEKING UNIV
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  • Application Information

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Problems solved by technology

Some of the few all-optical-operated optoelectronic synapses that have been reported are zinc oxide / lead sulfide (ZnO / PbS) heterojunctions excited by ultraviolet and infrared light or defect-containing black phosphorus (Black Phosphorus, BP) excited by ultraviolet light. ) transistors of two-dimensional materials to work, and the operation mode based on ultraviolet light and infrared light has a large hardware overhead and high cost, and is not conducive to its application to artificial visual neural networks working in the visible light band

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  • Self-selective modified complementary photosynaptic transistor and preparation method thereof
  • Self-selective modified complementary photosynaptic transistor and preparation method thereof
  • Self-selective modified complementary photosynaptic transistor and preparation method thereof

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Embodiment Construction

[0049] The present invention will be described in detail below in conjunction with the accompanying drawings and specific examples.

[0050] Taking an N-type photosynaptic device as an example, an N-type (inhibitory) photosynaptic transistor can be prepared on an SOI substrate according to the following steps:

[0051] 1) Use thermal oxidation on the SOI substrate of the P-type (100) crystal plane, and then use HF solution to rinse off the silicon oxide on the surface of the silicon film to thin the surface silicon film to 40nm. Note that the thickness of the silicon film after thinning here is determined The height of the nanowires prepared subsequently; + , the implantation energy is 33keV, and the implantation dose is 1E12cm -2 ; Inject As on the back side + , the implantation energy is 45keV, and the implantation dose is 5E15cm -2 , and then activate the impurity by RTA annealing, the annealing condition is 1000℃, 10s;

[0052] 2) Spin-coat HSQ negative electron beam p...

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Abstract

The invention discloses a self-selective modified complementary photosynaptic transistor and a preparation method thereof, and belongs to the field of synaptic devices applied to neuromorphic calculation. According to the photosynaptic device, porphyrin with a high photosensitive characteristic and a fence silicon nanowire system with a good low-dimensional transport characteristic are combined, and enrichment of porphyrin on silicon nanowires is realized by utilizing the hydrophilic-hydrophobic difference of silicon nitride and silicon oxide, so that the sensitivity of the photosynaptic device is improved. In addition, aiming at the characteristic that the existing photosynaptic device can only realize the enhancement characteristic or the inhibition characteristic, the photosynaptic characteristic with the complementary characteristic can be realized through the interaction between the porphyrin and the silicon nanowires with different doping types, so the photosynaptic device has the potential to be applied to a future artificial visual neural network.

Description

technical field [0001] The invention belongs to the field of synaptic devices for neuromorphic computing applications, and relates to a complementary optical synaptic transistor based on porphyrin and silicon nanowires with self-selective modification characteristics and a preparation method thereof. Background technique [0002] Neuromorphic computing is considered to be an effective way to break through the traditional von Neumann bottleneck and realize real bio-like computing. Among them, the realization of the artificial vision network is mainly realized by cascading the back-end computing and storage modules through the front-end light sensor array. However, this implementation method has problems such as large hardware overhead and high power consumption. The neuromorphic computing system based on the optical synapse array is expected to realize the integration of sensor storage and computing, save hardware overhead and power consumption, and use high-bandwidth, high-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K85/30H10K30/10H10K30/354H10K2102/00Y02E10/549Y02P70/50
Inventor 黎明李小康于博成黄如
Owner PEKING UNIV
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