Self-selective modified complementary photosynaptic transistor and preparation method thereof
A complementary, transistor technology, applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electro-solid-state devices, etc., can solve the problems of high cost, large hardware cost, disadvantageous use of artificial visual neural network, etc., to achieve enhanced photoelectric response, High sensitivity effect
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[0049] The present invention will be described in detail below in conjunction with the accompanying drawings and specific examples.
[0050] Taking an N-type photosynaptic device as an example, an N-type (inhibitory) photosynaptic transistor can be prepared on an SOI substrate according to the following steps:
[0051] 1) Use thermal oxidation on the SOI substrate of the P-type (100) crystal plane, and then use HF solution to rinse off the silicon oxide on the surface of the silicon film to thin the surface silicon film to 40nm. Note that the thickness of the silicon film after thinning here is determined The height of the nanowires prepared subsequently; + , the implantation energy is 33keV, and the implantation dose is 1E12cm -2 ; Inject As on the back side + , the implantation energy is 45keV, and the implantation dose is 5E15cm -2 , and then activate the impurity by RTA annealing, the annealing condition is 1000℃, 10s;
[0052] 2) Spin-coat HSQ negative electron beam p...
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