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Total internal reflection structure-based graphene photoelectric detector and preparation method thereof

A photodetector and total internal reflection technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve problems such as complex structures, and achieve the effect of enhancing interaction and enhancing photoelectric response

Inactive Publication Date: 2016-01-06
NANKAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the first three methods have complex structures and are not suitable for the application of large-area graphene. Although the enhancement of the interaction between graphene and light is smaller in the last method, the structure is simple and more suitable for the application of large-area graphene.

Method used

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  • Total internal reflection structure-based graphene photoelectric detector and preparation method thereof
  • Total internal reflection structure-based graphene photoelectric detector and preparation method thereof
  • Total internal reflection structure-based graphene photoelectric detector and preparation method thereof

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Embodiment 1

[0025] The preparation of the photodetector under the CVD monolayer graphene total internal reflection structure comprises the following steps:

[0026] 1. CVD single-layer graphene is transferred to a quartz sheet:

[0027] (1) Utilize the glass flake to process the copper foil with graphene thin film to be smooth;

[0028] (2) Attach the PET-silica gel layer to the copper foil;

[0029] (3) Put PET-silica gel / graphene / copper foil into FeCl with a concentration of 1mol / L 3 In the aqueous solution, soak for 1 hour to completely remove the metal copper and leave the PET-silica gel / graphene structure;

[0030] (4) Soak in 10% hydrochloric acid solution for half an hour, clean the PET-silica gel / graphene structure with deionized water, and dry it with nitrogen;

[0031] (5) Attach the PET-silica gel / graphene structure to the quartz sheet;

[0032] (6) After being closely attached, the PET-silica gel layer is lifted off to obtain graphene on the base of the quartz sheet, and t...

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Abstract

The invention discloses a total internal reflection structure-based graphene photoelectric detector and a preparation method thereof. The total internal reflection structure-based graphene photoelectric detector includes a surface electrode, a graphene layer, a glass sheet, refraction rate matching liquid and a prism which are arranged sequentially from top to bottom; and incident light is subjected to total internal reflection at the interface of the glass sheet and the graphene layer through the prism. The preparation method of the total internal reflection structure-based graphene photoelectric detector includes the following steps that: graphene is transferred to clean glass; the electrode surface is manufactured on the graphene layer; and the glass sheet covered with the graphene is attached to the prism through the refraction rate matching liquid. According to the total internal reflection structure-based graphene photoelectric detector and the preparation method thereof of the invention, large-area graphene photoelectric detection can be realized based on interaction of light and the graphene under the total internal reflection structure, and photoelectric response of the graphene in a wide spectral range can be enhanced, and high photoelectric response speed of the graphene is reserved, and the photoelectric response of the detector has obvious polarization dependence on differently polarized light which enters the detector.

Description

technical field [0001] The invention relates to a graphene photodetector based on a total internal reflection structure and a preparation method thereof, in particular to a large-area, broadband, and fast-response graphene photodetector, which belongs to the field of photoelectric detection. Background technique [0002] A photodetector is a device that converts optical signals into electrical signals, and is widely used in various fields of military and national economy. Compared with traditional semiconductor optoelectronic materials, graphene has unique advantages in photodetection applications: (1) wide-spectrum light absorption and light response range, from visible, infrared, to far infrared, and even terahertz. One-layer graphene only absorbs about 2.3% of visible light and infrared light. This value does not depend on the wavelength of incident light and the material itself. For graphene with fewer layers, each layer also absorbs approximately 2.3% of light; (2) Ultr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/09H01L31/0232H01L31/18
CPCH01L31/02327H01L31/09H01L31/1876Y02P70/50
Inventor 刘智波辛巍邢飞陈旭东田建国
Owner NANKAI UNIV
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