Strip-shaped PbSe/ZnSe heterojunction nanomaterial, and preparation method and application thereof

A nanomaterial and heterojunction technology, applied in the field of photosensitive materials, can solve the problems of limiting the application field of ZnSe, high electron-hole recombination rate, and reducing the utilization rate of sunlight, etc., to achieve simple and fast preparation process, suppress electron-hole Acupoint complex and regular structure effect

Active Publication Date: 2020-08-25
ANHUI UNIVERSITY
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the application of semiconductor-based nanophotosensitive materials in the field of photoelectric sensing has the disadvantages of low absorption threshold, high electron-hole recombination rate and low solar energy utilization efficiency of a single semiconductor-based photosensitive material.
[0004] Zinc selenide (ZnSe) is a II-VI semiconductor photosensitive material with broad application prospects. It has strong absorption in the blue / violet light region, but ultraviolet light accounts for less than 5% of the total sunlight, which not only limits The application field of ZnSe also reduces the utilization rate of sunlight

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Strip-shaped PbSe/ZnSe heterojunction nanomaterial, and preparation method and application thereof
  • Strip-shaped PbSe/ZnSe heterojunction nanomaterial, and preparation method and application thereof
  • Strip-shaped PbSe/ZnSe heterojunction nanomaterial, and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A preparation method of ribbon-shaped PbSe / ZnSe heterojunction nanomaterials, comprising the steps of:

[0035] Add dropwise zinc chloride aqueous solution with a concentration of 0.01mol / L to the selenium solution with a concentration of 0.02mol / L, stir for 1 hour and mix well, keep warm at 180°C for 12 hours, cool to room temperature, wash the precipitate with hydrazine hydrate for 5 times, and then water Centrifuge and wash the precipitate to neutrality, and finally wash the precipitate with ethylene glycol 5 times to remove water to obtain the precursor ZnSe 0.5N 2 h 4 Nanobelts, wherein the solvent of the selenium solution is an aqueous solution of hydrazine hydrate with a mass fraction ≥ 80 wt%, and the molar ratio of selenium to zinc chloride is 2:1;

[0036] The precursor ZnSe·0.5N 2 h 4 The nanoribbons were dispersed in ethylene glycol containing polyvinylpyrrolidone, and after stirring for 20 min, Pb(NO 3 ) 2 ethylene glycol solution, stirred for 2 hours ...

Embodiment 2

[0046] A preparation method of ribbon-shaped PbSe / ZnSe heterojunction nanomaterials, comprising the steps of:

[0047] Add dropwise an aqueous solution of zinc chloride with a concentration of 0.02 mol / L to the selenium solution with a concentration of 0.03 mol / L, stir for 1.5 h and mix evenly, keep warm at 200°C for 10 h, cool to room temperature, and centrifuge and wash the precipitate with hydrazine hydrate for 5 times, then Centrifuge and wash the precipitate with water to neutrality, and finally wash the precipitate with ethylene glycol for 5 times to remove water to obtain the precursor ZnSe 0.5N 2 h 4 Nanobelts, wherein the solvent of the selenium solution is an aqueous solution of hydrazine hydrate with a mass fraction ≥ 80 wt%, and the molar ratio of selenium to zinc chloride is 3:2;

[0048] The precursor ZnSe·0.5N 2 h 4 The nanoribbons were dispersed in ethylene glycol containing polyvinylpyrrolidone, and after stirring for 20 min, Pb(NO 3 ) 2 ethylene glycol s...

Embodiment 3

[0051] A preparation method of ribbon-shaped PbSe / ZnSe heterojunction nanomaterials, comprising the steps of:

[0052] Add dropwise an aqueous solution of zinc chloride with a concentration of 0.005 mol / L to the selenium solution with a concentration of 0.006 mol / L, stir for 1.3 h and mix evenly, keep warm at 190°C for 15 h, cool to room temperature, wash the precipitate with hydrazine hydrate for 5 times, and then Centrifuge and wash the precipitate with water to neutrality, and finally wash the precipitate with ethylene glycol for 5 times to remove water to obtain the precursor ZnSe 0.5N 2 h 4 Nanobelts, wherein the solvent of the selenium solution is an aqueous solution of hydrazine hydrate with a mass fraction ≥ 80 wt%, and the molar ratio of selenium to zinc chloride is 3:1;

[0053] The precursor ZnSe·0.5N 2 h 4 The nanoribbons were dispersed in ethylene glycol containing polyvinylpyrrolidone, and after stirring for 20 min, Pb(NO 3 ) 2 ethylene glycol solution, stir...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
lengthaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of a strip-shaped PbSe / ZnSe heterojunction nanomaterial. The preparation method comprises the following steps: dropwise adding a Pb(NO3)2 solution into a precursor ZnSe.0.5N2H4 nanobelt solution containing polyvinylpyrrolidone, carrying out uniform mixing and heating successively, keeping the reached temperature, conducting centrifuging, taking a precipitate, and washing, drying and calcining the precipitate to obtain the strip-shaped PbSe / ZnSe heterojunction nanomaterial. The invention further discloses the strip-shaped PbSe / ZnSe heterojunction nanomaterial which is prepared according to the preparation method of the strip-shaped PbSe / ZnSe heterojunction nanomaterial. The invention further discloses application of the strip-shaped PbSe / ZnSe heterojunction nanomaterial in a photoelectric sensor, a photoresistor, an infrared detector and a solar cell. The defects that a single semiconductor-based photosensitive material is low in absorption threshold value, high in electron-hole recombination rate and low in solar energy utilization rate are effectively overcome.

Description

technical field [0001] The invention relates to the technical field of photosensitive materials, in particular to a strip-shaped PbSe / ZnSe heterojunction nanomaterial and its preparation method and application. Background technique [0002] Energy is the lifeblood of biological activities, and the production, utilization and supply of energy will be one of the challenges in the coming decades. At present, we are faced with two acute problems, the shortage of fossil energy and the environmental pollution caused by the use of fossil energy. Therefore, finding and utilizing renewable energy is an important measure to get rid of dependence on fossil energy. As an inexhaustible source of energy, solar energy has gradually entered the field of vision of scientists, such as the application of solar energy in the fields of solar cells, photocatalysis, photoelectrochemistry, and photoelectric sensing. However, the utilization of solar energy is currently facing the problem of low u...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00
CPCC01B19/007C01P2002/72C01P2004/01C01P2004/03C01P2004/04C01P2006/40C01P2006/60Y02P20/133
Inventor 郭正康萍
Owner ANHUI UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap