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Full-inorganic perovskite quantum-dot CsPbBr3 electric storage device and fabrication method thereof

A storage device, inorganic calcium technology, applied in the direction of electrical solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of unstable devices, and achieve controllable energy bandgap, large light absorption coefficient, high The effect of carrier mobility

Active Publication Date: 2018-05-08
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the weak intermolecular interactions inside, the devices prepared under high temperature or other harsh environments are not very stable.

Method used

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  • Full-inorganic perovskite quantum-dot CsPbBr3 electric storage device and fabrication method thereof
  • Full-inorganic perovskite quantum-dot CsPbBr3 electric storage device and fabrication method thereof
  • Full-inorganic perovskite quantum-dot CsPbBr3 electric storage device and fabrication method thereof

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Experimental program
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Effect test

Embodiment 1

[0031] All inorganic calcium carbonite CsPbBr 3 The schematic diagram of quantum dot synthesis is shown in figure 1 , all of the following operations are under nitrogen (N ２ ) in a glove box. Take CsBr (0.4mmol) and PbBr 2 (0.4 mmol) powder was dissolved in 10 mL dimethylformamide (DMF) solution, followed by adding 1 mL oleic acid (OA) and 0.5 mL oleylamine (OAm) to prepare a precursor solution. Take 1 mL of the precursor solution and add it to 10 mL of toluene (Toluene), while stirring at 600 rpm to obtain the all-inorganic calcium carbonite CsPbBr 3 quantum dots.

[0032] figure 2 The all-inorganic calcium carbonite CsPbBr seen under the transmission electron microscope 3 Morphology of quantum dots: It can be clearly seen that the particle shape is cubic, and its size distribution is around 12nm; image 3 The all-inorganic calcium carbonite CsPbBr prepared as 3 Fluorescence spectrum (PL) and ultraviolet absorption spectrum (UV) of quantum dot solution. The peak pos...

Embodiment 2

[0034] Sandwich device preparation, the prepared device is PET / ITO / PMMA / CsPbBr 3Sandwich structure of QDs / PMMA / Au. Before spin-coating the functional layer, the PET / ITO (indium tin oxide) film was washed with washing powder, then ultrasonicated in deionized water, acetone and ethanol for 30 minutes, washed and dried. Subsequently, the PET / ITO film was cleaned for 15 minutes using an ultraviolet ozone cleaning machine (UVO) for later use. Dissolve PMMA powder in toluene to prepare a 20 mg / mL pure PMMA solution. Take 11mL all inorganic calcium carbon ore CsPbBr 3 The quantum dot precursor solution is ready for use. Add a 0.45 micron pore filter head to the front of the syringe, so that the solution can be sprayed onto the PET / ITO surface through the syringe for spin coating.

[0035] All of the following operations are carried out at room temperature under a nitrogen atmosphere (N ２ ) in a glove box. The speed of the homogenizer is firstly controlled at 1000 rpm for 15 sec...

Embodiment 3

[0037] Memory performance test, the all-inorganic calcium carbon ore CsPbBr obtained in embodiment two 3 Quantum dot flexible electrical storage devices are tested for I-V performance, and the measured typical curves are as follows Figure 5 , using all-inorganic calcium carbonite CsPbBr 3 The flexible electrical storage device made of quantum dots has DRAM storage performance, which has the characteristics of good repeatability and many bending times.

[0038] (1) All inorganic calcium carbon ore CsPbBr 3 Quantum dot material characterization:

[0039] Figure 6 CsPbBr 3 PET / ITO / CsPbBr prepared by spin-coating quantum dots on PET / ITO film 3 The X-ray diffraction pattern, with peaks that can be associated with the cubic phase CsPbBr 3 (PDF#54-0752, lattice constant a = b = c = 5.84 Å); correspondingly enhanced (100) and (200) peaks, indicating that CsPbBr 3 The orientation of quantum dots on the surface of PET / ITO film is relatively consistent.

[0040] (2) Preparation...

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Abstract

The invention discloses a full-inorganic perovskite quantum-dot CsPbBr3 electric storage device and a fabrication method thereof. The full-inorganic perovskite quantum-dot CsPbBr3 electric storage device has dynamic random access memory (DRAM) electric storage performance, the application of perovskite quantum dot in the storage device is expanded, the semiconductor device can be favorably applied, the DRAM electric storage behavior is successfully achieved by the fabricated electric storage device having a sandwiched structure, meanwhile, the storage device is simple in fabrication process and good in stability and has the characteristics of good repeatability and frequent bending. The invention provides a new design idea for a flexible electric storage device; and with the flexible electric storage device fabricated by the technology, the DRAM electric storage behavior is successfully achieved.

Description

technical field [0001] The invention belongs to the technical field of organic-inorganic hybrid semiconductor materials, and in particular relates to an all-inorganic calcium carbon ore quantum dot CsPbBr 3 The electrical storage device and its preparation method have DRAM electrical storage performance, expand the application of perovskite quantum dots in storage devices, and have good application to semiconductor devices. Background technique [0002] In the past few decades, the storage capacity of inorganic semiconductor memory devices has increased significantly, while the size has also decreased significantly. However, there are still some problems that need to be solved urgently, such as the limitation of lithographic resolution, complex preparation process and high production cost. Organic semiconductor materials have the advantages of low cost, easy large-scale preparation, three-dimensional stacking, flexible device structure, high storage density, and the ability...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/108H01L21/8242H01L29/12H10B12/00
CPCH01L29/12H10B12/00H10B12/01
Inventor 路建美贺竞辉
Owner SUZHOU UNIV
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