The invention discloses a
gallium nitride-based light-emitting
diode (LED) with distributed Bragg reflectors on side walls and a preparation method thereof. The preparation method comprises the following steps of: sequentially growing a N-GaN layer, a multiple-
quantum well layer and a P-GaN layer on a
sapphire substrate; forming a transparent conducting layer on the P-GaN layer;
etching part of a table top on which the transparent conducting layer is positioned by a light shield until the N-GaN layer is exposed; forming a P
electrode on the transparent conducting layer; forming a N
electrode on the exposed N-GaN layer; forming the distributed Bragg reflectors on the side walls of the
sapphire substrate, the N-GaN layer, the
multiple quantum well layer and the P-GaN layer; and
thinning and
polishing the
sapphire substrate, and
cutting the
sapphire substrate into independent LED core grains. Compared with the prior art, the invention has the
advantage that the distributed Bragg reflectors with excellent
reflectivity are arranged on the side walls of an LED
chip, thus when light reaches the side surfaces of the
sapphire substrate, light output or light extraction can be effectively increased, and the external
quantum efficiency of the LED can be effectively improved.