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175results about How to "Increase reflective area" patented technology

Display apparatus

The present invention relates to a display apparatus comprising front display unit (10) and rear display unit (50), wherein the front display unit (10) and the rear display unit (50) are arranged such that an image on the rear display unit (50) is visible through a portion of the front display unit (10). The front display unit (10) comprise: a display panel (20); a front backlight (30) which is arranged behind the display panel (20), and which includes a first light guide plate (36) having a projection window (16) through which an image on the rear display unit (50) is visible, first light sources (38) arranged along the circumference of the first light guide plate (36), and a reflection sheet (39) arranged at the rear surface of the first light guide plate (36) to reflect light and having an image hole (18) formed at the region thereof that corresponds to the projection window (16); a rear backlight (40) arranged behind the front backlight (30) and including a second light guide plate (42) corresponding to the projection window (16) and second light sources (44) arranged along the circumference of the second light guide plate (42); and a rear optical shutter (48) arranged behind the second light guide plate (24). The rear optical shutter (48) is made of a transparent material, such that the rear display unit and the front display unit cooperate with one another to display a combined image. The entire screen of the front display unit is capable of displaying an image, without any disconnection of the image, when the rear optical shutter is closed.
Owner:KORTEK CORP

Flip LED (light-emitting diode) chip with high luminous efficiency and good heat radiating performance and preparation method thereof

The invention provides a flip LED (light-emitting diode) chip with high luminous efficiency and good heat radiating performance and a preparation method thereof. The LED chip comprises an epitaxial substrate, wherein an N type epitaxial layer, a light-emitting layer and a P type epitaxial layer are sequentially laminated on the upper surface of the epitaxial substrate; a concave hole is formed in the P type epitaxial layer, downwards penetrates through the light-emitting layer and extends to the N type epitaxial layer; a P contact metal layer, a P baffle protecting layer and a P surface electrode layer are sequentially laminated on the upper surface of the P type epitaxial layer; the lower surface of the P baffle protecting layer and the upper surface of the P contact metal layer are overlapped; an N contact metal layer and an N surface electrode layer are sequentially laminated on the upper surface of the N type epitaxial layer corresponding to the bottom of the concave hole; a clearance is reserved between the N contact metal layer and the edge of the concave hole; an insulating layer is arranged on the wall surface of the clearance. The flip LED chip provided by the invention has high heat-conducting property and conductivity, and improvement of the luminous efficiency of the LED chip is facilitated by the structure.
Owner:APT ELECTRONICS

Inverted LED chip with high light emitting efficiency and LED device and manufacturing method of inverted LED chip with high light emitting efficiency

The invention provides an inverted LED chip, a manufacturing method of the inverted LED chip and an LED device comprising the inverted LED chip. A first concave hole is formed in a P-type epitaxial layer of the inverted LED chip; a P-type contact metal layer is overlapped to the upper surface of the P-type epitaxial layer; a P-type blocking protective layer is overlapped to the upper surface of a first overlapping structure, and the coverage area of the lower surface of the P-type blocking protective layer is coincident with the area of the upper surface of the P-type epitaxial layer; an insulating layer is arranged on the exposed surface of a second overlapping structure, a first through hole is formed in the part, corresponding to the position of the bottom of the first concave hole, of the insulating layer of the second overlapping structure, and a second through hole is formed in the part, corresponding to the upper surface of the P-type blocking protective layer, of the insulating layer of the second overlapping structure; an N-type surface electrode is electrically connected with an N-type epitaxial layer through the first through hole, and a P-type surface electrode is electrically connected with the P-type blocking protective layer through the second through hole. By means of the inverted LED chip, the heat conduction capacity and the electric conduction capacity are good, and the light emitting efficiency is easily improved.
Owner:APT ELECTRONICS

Bird repelling device

The invention provides a bird repelling device, and belongs to the technical field of bird repelling devices for electricity power. The device comprises a bottom plate, a self-rotating device, a reflecting body, a control system and a bird repelling mechanism; the self-rotating device comprises a rotary shaft, a shaft sleeve and multiple wind bowls; the reflecting body is of an umbrella-shaped structure enclosed by multiple arc blades; the reflecting body is connected with the rotary shaft; the control system comprises a photovoltaic assembly, a controller, a storage battery and an infrared sensor; the output end of the photovoltaic assembly is connected with the storage battery through a charge discharge module; the output end of the charge discharge module is connected with the input endof the controller, and the output end of the infrared sensor is connected with the input end of controller; the bird repelling device comprises an acousto-optic alarming device, a sound generating plate and a smell dispersing assembly. According to the bird repelling device, three manners of optical reflection, noise and flash light can be utilized by the device to repel birds, the nest buildingand activities in the periphery of a power transmission pole of the birds can be effectively avoided to reduce problems of short circuit, grounding fault and the like caused by the activities of the birds are reduced, and the safety running of power transmission wires is ensured.
Owner:SHIJIAZHUANG JINNENG ELECTRIC EQUIP CO LTD

Heat-dissipation type LED (Light Emitting Diode) lamp

The invention relates to the field of lamps and discloses a heat-dissipation type LED (Light Emitting Diode) lamp. The heat-dissipation type LED lamp comprises a lamp body, a lamp cap, a lamp holder and a lamp shade, wherein the lamp body is connected to the lamp cap; the lamp cap is in threaded connection with the lamp holder; the lamp shade covers the lamp body; foldable memory metal is connected between the lamp holder and the lamp shade; a plurality of holes are formed in the foldable memory metal; a first elastic sleeve is connected onto the lamp holder in a sliding manner; a second elastic sleeve sleeves the first elastic sleeve in the sliding manner; the second elastic sleeve is connected to the lamp shade; an expansion block is arranged between the second elastic sleeve and the lamp shade; a spring is connected between the first elastic sleeve and the memory metal; a first through hole is formed in the first elastic sleeve; a second through hole is formed in the second elastic sleeve; the first through hole and the second through hole are formed in a staggered manner; the first elastic sleeve is positioned on the outer side of the memory metal; the lamp shade is a transparent heating expansion body. Compared with the prior art, the heat-dissipation type LED lamp has the advantages of better heat dissipation effect, better illumination brightness, low production cost and long service life; the heat-dissipation type LED lamp can be popularized and used.
Owner:广东蓝云照明工程有限公司

Composite salivate method light reflection sheet and manufacturing method thereof

The invention discloses a composite salivate method light reflection sheet. The sheet is characterized in that the sheet is manufactured by sequentially extruding and shaping three layers such as an anti-ultraviolet antistatic mixed upper layer, a bulb-in-bulb layer and an anti-ultraviolet antistatic mixed lower layer; the bulb-in-bulb layer is formed by mixing 30 weight parts of components A, and 60-80 weight parts of components B; the anti-ultraviolet antistatic mixed upper layer and the anti-ultraviolet antistatic mixed lower layer are both formed by components C; the components A are formed by mixing 3-48 weight parts of inorganic particles and 5-50 weight parts of resin A; the components B are formed by mixing 50-70 weight parts of resin B and 1-20 weight parts of compatilizers; the components C are formed by mixing 1-5 weight parts of components D and 95-99 weight parts resin B; and the components D are formed by mixing organic ultraviolet absorbents and antistatic agents. The sheet can be processed into light reflection board components in devices for LED (light emitting diode) illumination, common daylight illumination, and advertisement display board light boxes by means of cutting, folding, plastic adsorption or punching forming.
Owner:四川东方绝缘材料股份有限公司

High-power LED chip and manufacturing method thereof

The invention provides a high-power LED chip and a manufacturing method thereof. The high-power LED chip comprises an epitaxial layer, an ITO layer, a first reflection layer, a barrier layer, a passivation layer, a second reflection layer, a bonding layer, a Si substrate layer, a protection layer, a P electrode and an N electrode. Round holes are formed in the epitaxial layer, the inner side wallsof the round holes are covered with a contact layer, and the surface of the contact layer and the surface of the passivation layer are evaporated with the second reflection layer, so that the reflection area of light in the high-power LED chip is increased, and the lighting effect and the photoelectric reliability of the chip are improved. According to the manufacturing method provided by the invention, through the method of forming the uniform groove array on the edge of the barrier layer and then plating the passivation layer and the second reflection layer in sequence, light absorption ofthe metal of the barrier layer can be reduced; the reflection effect is improved through the second reflection layer; and meanwhile, the uniform groove array is arranged to facilitate uniform conduction of current and improve the luminous efficiency on the premise of ensuring the stability of a device.
Owner:HGC (WUHAN) TECH CO LTD

Light emitting diode having full mirror surface structure and manufacturing method therefor

The invention provides a light emitting diode having a full mirror surface structure and a manufacturing method therefor. A DBR layer which is epitaxially grown in advance is used, the DBR layer corresponding to an Ohmic contact layer is reserved via chip technologies, an Ohmic contact electrode zone is enabled to have Ohmic contact effects and reflecting layer effects, the Ohmic contact electrode zone and an ODR mirror surface system can jointly form a full mirror surface structure, and no reflecting mirror surface area loss can be caused. Specifically, the light emitting diode having the full mirror surface structure comprises a light emitting epitaxial layer and a mirror surface system positioned below the light emitting epitaxial layer, the mirror surface system comprises a metal reflecting layer and a light transmitting layer positioned above the metal reflecting layer, the light transmitting layer comprises a light transmitting zone and a Ohmic contact zone, the light transmitting zone is made of light transmitting dielectric material, the light transmitting layer and the metal reflecting layer form an ODR reflecting mirror, the Ohmic contact zone orderly comprises the Ohmic contact layer and the DBR layer in a from bottom to top manner, the DBR layer is formed by at least alternately stacking first semiconductor layers and second semiconductor layers, and therefore an uninterrupted reflecting mirror surface system can be formed.
Owner:TIANJIN SANAN OPTOELECTRONICS
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