The invention provides a light-emitting
diode capable of improving a
light reflection effect and a preparation method thereof, and belongs to the technical field of photoelectron manufacturing. The light-emitting
diode comprises an epitaxial layer, a transparent conducting layer, a
passivation layer, a first reflecting layer, a second reflecting layer and a protective layer, the transparent conducting layer is located on the surface of the epitaxial layer, and the transparent conducting layer is wrapped by the
passivation layer; the first reflection layer is located on the surface of the
passivation layer, the first reflection layer is connected with the transparent conductive layer through a through hole in the passivation layer, and the
protection layer wraps the first reflection layer; the second reflection layer is located in the passivation layer and located between the surface, away from the epitaxial layer, of the passivation layer and the surface, close to the epitaxial layer, of the passivation layer, and at least part of the
orthographic projection of the second reflection layer on the surface, away from the passivation layer, of the epitaxial layer is overlapped with the
orthographic projection of the
protection layer on the surface, away from the passivation layer, of the epitaxial layer. The light reflecting effect of the
light emitting diode on the backlight side can be improved, and therefore the light emitting brightness of the light emitting side of the
light emitting diode is improved.