Inverted LED chip with high light emitting efficiency and LED device and manufacturing method of inverted LED chip with high light emitting efficiency

Abstract

The invention provides an inverted LED chip, a manufacturing method of the inverted LED chip and an LED device comprising the inverted LED chip. A first concave hole is formed in a P-type epitaxial layer of the inverted LED chip; a P-type contact metal layer is overlapped to the upper surface of the P-type epitaxial layer; a P-type blocking protective layer is overlapped to the upper surface of a first overlapping structure, and the coverage area of the lower surface of the P-type blocking protective layer is coincident with the area of the upper surface of the P-type epitaxial layer; an insulating layer is arranged on the exposed surface of a second overlapping structure, a first through hole is formed in the part, corresponding to the position of the bottom of the first concave hole, of the insulating layer of the second overlapping structure, and a second through hole is formed in the part, corresponding to the upper surface of the P-type blocking protective layer, of the insulating layer of the second overlapping structure; an N-type surface electrode is electrically connected with an N-type epitaxial layer through the first through hole, and a P-type surface electrode is electrically connected with the P-type blocking protective layer through the second through hole. By means of the inverted LED chip, the heat conduction capacity and the electric conduction capacity are good, and the light emitting efficiency is easily improved.

Description

technical field [0001] The invention belongs to the field of manufacturing light-emitting devices, and relates to a structure of a light-emitting diode chip and a manufacturing method thereof, in particular to a flip-chip light-emitting diode chip and a manufacturing method thereof, and an LED device containing the flip-chip LED chip. Background technique [0002] Light-emitting diode (LED) light sources have the advantages of high efficiency, long life, and no harmful substances such as Hg. With the rapid development of LED technology, the brightness and lifespan of LEDs have been greatly improved, making the application of LEDs more and more extensive. From outdoor lighting such as street lights to urban lighting such as decorative lights, they are all used or Replace with LED as light source. [0003] In the semiconductor lighting industry, the structure of LED chips is generally divided into three types: front chip structure, vertical chip structure and flip chip struct...

AI Technical Summary

Problems solved by technology

[0005] The existing method of making flip-chip LED chips has six main steps, and each step uses a photolithography process, which leads to high production costs due to numerous manufacturing processes

Moreover, in the flip-chip LED chip made in this way, its P contact metal layer and P barrier protection layer are all made on the stepped P-type epitaxial layer 13 by etching in the subsequent process. Due to the limitation of photolithography precision, not only The coverage area of ​​the P contact metal layer is much smaller than the surface area of ​​the P-type epitaxial layer, and the coverage area of ​​the P-blocking protective layer is also smaller than the surface area of ​​the P-type epitaxial layer, which will affect the thermal conductivity and light extraction efficiency of the chip, and cannot be obtained. further improvement

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