Gallium nitride-based light-emitting diode (LED) with distributed Bragg reflectors on side walls and preparation method thereof

A technology of Bragg reflectors and light-emitting diodes, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of affecting the light output efficiency of light-emitting diodes and the inability to effectively extract light from the side wall, so as to improve external quantum efficiency, excellent reflectivity, Increase the effect of light emission or light extraction

Inactive Publication Date: 2010-10-27
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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AI Technical Summary

Problems solved by technology

When light is emitted from the quantum well layer 13, this structure is likely to make it impossible to effectively extract the light emitted from the side wall, that is, it does not emit light upward, which affects the light extraction efficiency of the light-emitting diode.

Method used

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  • Gallium nitride-based light-emitting diode (LED) with distributed Bragg reflectors on side walls and preparation method thereof
  • Gallium nitride-based light-emitting diode (LED) with distributed Bragg reflectors on side walls and preparation method thereof
  • Gallium nitride-based light-emitting diode (LED) with distributed Bragg reflectors on side walls and preparation method thereof

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Embodiment Construction

[0019] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0020] like figure 2 A method for preparing a gallium nitride-based light-emitting diode with a distributed Bragg reflector on the side wall is shown, and the process steps are as follows:

[0021] On the sapphire substrate 21, grow an N-GaN layer 22, a multi-quantum well layer 23 and a P-GaN layer 24 in sequence; form an ITO transparent conductive layer 25 on the P-GaN layer 24;

[0022] Etching the portion of the mesa where the ITO transparent conductive layer 25 is located to expose the N-GaN layer 22 through photomask and etching operations;

[0023] Forming a P electrode 26 on the ITO transparent conductive layer 25;

[0024] forming an N electrode 27 on the exposed N-GaN layer 22;

[0025] Form distributed Bragg reflector 28 on the sidewall of sapphire substrate 21, N-GaN layer 22, multi-quantum well layer 23 and P-GaN layer 24; Distributed Br...

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Abstract

The invention discloses a gallium nitride-based light-emitting diode (LED) with distributed Bragg reflectors on side walls and a preparation method thereof. The preparation method comprises the following steps of: sequentially growing a N-GaN layer, a multiple-quantum well layer and a P-GaN layer on a sapphire substrate; forming a transparent conducting layer on the P-GaN layer; etching part of a table top on which the transparent conducting layer is positioned by a light shield until the N-GaN layer is exposed; forming a P electrode on the transparent conducting layer; forming a N electrode on the exposed N-GaN layer; forming the distributed Bragg reflectors on the side walls of the sapphire substrate, the N-GaN layer, the multiple quantum well layer and the P-GaN layer; and thinning and polishing the sapphire substrate, and cutting the sapphire substrate into independent LED core grains. Compared with the prior art, the invention has the advantage that the distributed Bragg reflectors with excellent reflectivity are arranged on the side walls of an LED chip, thus when light reaches the side surfaces of the sapphire substrate, light output or light extraction can be effectively increased, and the external quantum efficiency of the LED can be effectively improved.

Description

technical field [0001] The invention relates to a gallium nitride-based light-emitting diode, in particular to a gallium-nitride-based light-emitting diode with a distributed Bragg reflector on the side wall and a preparation method thereof. Background technique [0002] Light Emitting Diode (English for Light Emitting Diode, referred to as LED) has the advantages of no pollution, high brightness, low power consumption, long life, low working voltage, and easy miniaturization. As the efficiency of power GaN-based LEDs continues to increase, it will become an unstoppable trend to replace existing lighting sources with GaN-based LED semiconductor lamps; however, there are still many problems to be solved if semiconductor lighting is to enter thousands of households. The problem is luminous efficiency and production cost. [0003] Existing methods to improve LED luminous efficiency mainly include the use of graphic substrates, transparent substrates, distributed Bragg reflecto...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/46H01L33/40
Inventor 彭康伟林素慧刘传桂林科闯
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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