Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemical etching, cleaning and drying method of single-crystal silicon solar battery and integrated processing machine

A solar cell and chemical etching technology, applied in the field of chemical etching technology and cleaning, can solve the problems of difficulty in improving the cleanliness of silicon wafers, operator injury, serious pollution, etc.

Inactive Publication Date: 2007-12-12
SHANGHAI MINGXING KAICHENG ULTRASONIC TECH +2
View PDF0 Cites 67 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This process needs to consume a lot of water to complete the production and cleaning of the texture, and hydrochloric acid and hydrofluoric acid will cause harm to the operator and pollute the surrounding environment. slice cleanliness
More importantly, if the hydrochloric acid and hydrofluoric acid on the silicon wafer are not thoroughly cleaned, it will cause delayed corrosion of the silicon cell after a long time, which will affect the service life of the solar cell
The traditional production process has high energy consumption, serious pollution, complex sewage treatment and air purification

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical etching, cleaning and drying method of single-crystal silicon solar battery and integrated processing machine
  • Chemical etching, cleaning and drying method of single-crystal silicon solar battery and integrated processing machine
  • Chemical etching, cleaning and drying method of single-crystal silicon solar battery and integrated processing machine

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] Now in conjunction with accompanying drawing, the present invention will be further described:

[0020] The method of chemical etching, cleaning and drying of monocrystalline silicon solar cells includes water, acid and alkali to participate in etching and cleaning, and its characteristics are: and ultrasonic waves participate in the etching and cleaning process; the etching, cleaning and drying are completed by the following operating procedures :

[0021] ①Ultrasonic pre-washing and pre-heating: Clean the cutting chips, coolant and other sundries on the silicon wafer with water cleaning solution, and heat the silicon wafer at room temperature to 40-50°C in the cleaning solution;

[0022] ②Ultrasonic to remove the damaged layer: Soak the silicon wafer in a 5% NaOH solution at 80-90°C for 5 minutes, and the damaged layer will be peeled off by the cavitation bubbles of the ultrasonic wave and the uniform liquid mass concentration;

[0023] ③Ultrasonic texturing treatmen...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Monocrystalline silicon solaode chemical etching, washing, drying method and integral processor belong to technique field of chemical etching technique and washing. It characterized in that it not only includes water, acid, alkali, but also ultrasonic participates in etching and washing course: it includes following steps: (1) ultrasonic washes and heats in advance, (2) ultrasonic removes damnification layer, (3) ultrasonic makes herbs into wool, (4) ultrasonic rinses, (5) washing with acid to counteract, (6) ultrasonic rinses, (7) cutting water, (8) hot enthalpy to dry. Positive effects of the invention are: adopting ultrasonic to etch and wash, liquid of making wool can be acted with silicon piece, similar coarseness degree can be generated on surface, perfect pyramid pattern can be obtained; it also eliminates kalium, natrium ion from alkalescent solution, and extends service life of silicon piece; pollution can be decreased, energy consumption and water source can be saved greatly, it is a practical invention.

Description

technical field [0001] The invention belongs to the field of chemical etching technology and cleaning technology. Background technique [0002] Solar photovoltaic power generation is an important part of new energy and renewable energy, and is considered to be the most promising new energy technology in the world. Silicon solar cells are the core components of photovoltaic power generation. High-efficiency silicon solar cells need to reduce radiation and enhance light collection through surface texture structures. Textures such as monocrystalline silicon are usually treated with an alkaline solution. Silicon wafers must be cleaned before and after the texturing process. The traditional method of processing texture is: washing - soaking lye to remove the damaged layer (20-30% NaOH) - stirring alkali corrosion texturing - running water rinsing - hydrochloric acid cleaning (3-5%) - running water rinsing - Cleaning with hydrofluoric acid (3-5%) - Rinsing with running water - ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 钟建成张剑李琴钟建平朱伟国
Owner SHANGHAI MINGXING KAICHENG ULTRASONIC TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products