A kind of quantum dot modified zno nanorod array electrode and preparation method thereof

A nanorod array, quantum dot technology, applied in nanotechnology, nanotechnology, cable/conductor manufacturing, etc., can solve the problems of low photocatalytic efficiency and low utilization of sunlight, achieve high activity, improve photocatalytic efficiency, The effect of increasing photosensitivity

Active Publication Date: 2016-03-09
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the technical problems of low photocatalytic efficiency of ZnO nanomaterials under visible light and low utilization rate of sunlight, and provide a quantum dot modified ZnO nanorod array electrode and its preparation method

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  • A kind of quantum dot modified zno nanorod array electrode and preparation method thereof
  • A kind of quantum dot modified zno nanorod array electrode and preparation method thereof
  • A kind of quantum dot modified zno nanorod array electrode and preparation method thereof

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specific Embodiment approach 1

[0044] Embodiment 1: A quantum dot modified ZnO nanorod array electrode of this embodiment includes a substrate, a ZnO nanorod array and a quantum dot coating layer; wherein, the substrate is a conductive substrate, and the ZnO nanorod array is It is made of zinc nitrate hexahydrate with a concentration of 0.08-0.12M and hexamethylenetetramine with a concentration of 0.08-0.12M, and the volume ratio of zinc nitrate hexahydrate and hexamethylenetetramine is 1: 1. The quantum dot coating layer is alternately coated with cationic polyelectrolyte-o-phenanthroline cobalt layers and quantum dot nanoparticle layers, and the cationic polyelectrolyte-o-phenanthroline cobalt layer is coated on ZnO On the nanorod array, the quantum dot nanoparticle layer is coated on the cationic polyelectrolyte-o-phenanthroline cobalt layer, wherein the quantum dot nanoparticle layer is a CdTe nanoparticle layer, a CdS nanoparticle layer or a CdSe nanoparticle layer .

[0045] The absorption of the qua...

specific Embodiment approach 2

[0046] Embodiment 2: This embodiment is different from Embodiment 1 in that: the conductive substrate is ITO or FTO. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0047] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is: the preparation method of the cationic polyelectrolyte-o-phenanthroline cobalt layer is as follows: soak the ZnO nanorod array in a pH of 6.2-8.5 After 5-20 minutes in the cationic polyelectrolyte-o-phenanthroline cobalt solution, take it out, rinse it with deionized water, and dry it to complete;

[0048] Wherein, the cationic polyelectrolyte-o-phenanthroline cobalt solution is composed of o-phenanthroline cobalt with a concentration of 0.5-2 mg / mL and a cationic polyelectrolyte with a concentration of 0.2-1 mg / mL; wherein, the Cationic polyelectrolyte—the cationic polyelectrolyte in the o-phenanthroline cobalt layer is polyethyleneimine, polyallylamine hydrochloride or polydimethyldiallylammonium chloride. Others are the same as in the first or second embodiment.

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Abstract

The invention relates to a quantum dot-modified ZnO nanorod array electrode and a preparation method thereof, and relates to an array electrode and a preparation method thereof. With the adoption of the quantum dot-modified ZnO nanorod array electrode and the preparation method thereof, the technical problems that the photocatalytic efficiency of ZnO nano materials is low under visible light, and the utilization rate of the sunlight is low are solved. The preparation method comprises the following steps: 1, taking conductive glass as a substrate, and preparing a highly ordered ZnO nanorod array by adopting a hydrothermal method; and 2, alternately depositing polyelectrolyte and quantum dot particles on the surface of the ZnO nanorod array, so as to obtain the uniform coated quantum dot-modified ZnO nanorod array electrode. With the adoption of the method for preparing photoelectrodes, the length of the ZnO nanorod array and the thickness of the coated quantum dot can be controlled; and the electrode prepared by the method provided by the invention exhibits good photoelectrocatalytic activity and visible-light response characteristics under irradiation of the visible light. The quantum dot-modified ZnO nanorod array electrode and the preparation method thereof are used in the fields of photoelectrocatalytic degradation of environmental pollutants, photoelectrocatalytic synthesis and water photolysis for hydrogen generation.

Description

technical field [0001] The invention relates to an array electrode and a preparation method thereof. Background technique [0002] Zinc oxide (ZnO) is an important direct wide-bandgap semiconductor material with excellent piezoelectric, pyroelectric, and photoelectric properties. ZnO nanorods are widely used in field emission, gas sensors, solar cells, field-effect transistors, and electroluminescent devices. Applications have aroused widespread research interest. [0003] Since ZnO nanomaterials can only absorb and scatter ultraviolet rays, which only account for 5-6% of sunlight, the photocatalytic efficiency of photovoltaic devices based on ZnO nanomaterials is low, and the utilization rate of sunlight is low. [0004] Layer-by-Layer Self-assembly (LbL) method, also known as ion self-assembly, refers to the combination of positive (negative) charged nanoparticles or nanoparticle compounds with negative (positive) charged ions, Supramolecules, biomolecules, nanoparticles...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/20H01G9/042H01B5/00H01B13/00B82Y30/00B82Y40/00
Inventor 刘丹青刘绍琴杨彬
Owner HARBIN INST OF TECH
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