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Zinc oxide/bismuth vanadate heterojunction film with characteristic of visible light responding, and preparation method and applications thereof

A technology with response characteristics and visible light, applied in chemical instruments and methods, metal/metal oxide/metal hydroxide catalysts, separation methods, etc., can solve the problems of cleaning, energy saving, efficient preparation of photocatalytic thin films, and the degree of substrate bonding Insufficient, unfavorable photocatalytic degradation and other problems, to achieve the effect of fewer defects, orderly arrangement of bonding height, and good film forming effect

Active Publication Date: 2017-07-14
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the compact structure of the film is not conducive to photocatalytic degradation, the repeatability is not high, the environmental pollution is large, and the degree of bonding with the substrate is not strong. idea

Method used

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  • Zinc oxide/bismuth vanadate heterojunction film with characteristic of visible light responding, and preparation method and applications thereof
  • Zinc oxide/bismuth vanadate heterojunction film with characteristic of visible light responding, and preparation method and applications thereof
  • Zinc oxide/bismuth vanadate heterojunction film with characteristic of visible light responding, and preparation method and applications thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] 1) BiVO 4 Precursor configuration:

[0047] Add NH to deionized water 4 VO 3 , stirred for 20 minutes until clear, then added dilute nitric acid, stirred for 10 minutes until the solution was uniform, then added Bi(NO 3 ) 3 ·5H 2 O, stirred at room temperature for 60min until clear, finally added boric acid, stirred for 10min until clear, and obtained BiVO 4 Precursor; NH added to it 4 VO 3 , dilute nitric acid, Bi(NO 3 ) 3 ·5H 2 The molar ratio of O and boric acid is 1:41.7:1:1; BiVO 4 The concentration of Bi element in the precursor solution is 0.010mol / L;

[0048] 2) Functionalization of the substrate:

[0049] Place the FTO conductive glass substrate in water, acetone, and absolute ethanol in sequence for ultrasonic cleaning for 10 min. After washing, irradiate with 184.9nm ultraviolet light for 30 minutes to form a hydroxyl monomolecular layer on the surface of the substrate, and obtain a substrate with an adsorbed hydroxyl layer;

[0050] 3) BiVO 4 ...

Embodiment 2

[0065] 1) BiVO 4 Precursor configuration:

[0066] Add NH to deionized water 4 VO 3 , stirred for 15 minutes until clear, then added dilute nitric acid, stirred for 15 minutes until the solution was uniform, then added Bi(NO 3 ) 3 ·5H 2 O, stirred at room temperature for 50min until clarified, finally added boric acid, stirred for 15min until clarified, and obtained BiVO 4 Precursor; NH added to it 4 VO 3 , dilute nitric acid, Bi(NO 3 ) 3 ·5H 2 The molar ratio of O and boric acid is 1:42:1:1; BiVO 4 The concentration of Bi element in the precursor solution is 0.020mol / L;

[0067] 2) Functionalization of the substrate:

[0068] Place the FTO conductive glass substrate in water, acetone, and absolute ethanol in sequence for ultrasonic cleaning for 10 min. After washing, irradiate with 184.9nm ultraviolet light for 20 minutes to form a hydroxyl monomolecular layer on the surface of the substrate, and obtain a substrate with an adsorbed hydroxyl layer;

[0069] 3) Bi...

Embodiment 3

[0084] 1) BiVO 4 Precursor configuration:

[0085] Add NH to deionized water 4 VO 3 , stirred for 10 minutes until clear, then added dilute nitric acid, stirred for 20 minutes until the solution was uniform, then added Bi(NO 3 ) 3 ·5H 2 O, stirred at room temperature for 80min until clarified, finally added boric acid, stirred for 20min until clarified, and obtained BiVO 4 Precursor; NH added to it 4 VO 3 , dilute nitric acid, Bi(NO 3 ) 3 ·5H 2 The molar ratio of O and boric acid is 1:55:1:1; BiVO 4 The concentration of Bi element in the precursor solution is 0.030mol / L;

[0086] 2) Functionalization of the substrate:

[0087] Place the ITO conductive glass substrate in water, acetone, and absolute ethanol in sequence for ultrasonic cleaning for 10 min. After washing, irradiate with 184.9nm ultraviolet light for 40 minutes to form a hydroxyl monomolecular layer on the surface of the substrate, and obtain a substrate with an adsorbed hydroxyl layer;

[0088] 3) Bi...

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Abstract

The invention provides a zinc oxide / bismuth vanadate heterojunction film with a characteristic of visible light responding, and a preparation method and applications thereof. The preparation method comprises the following steps: at first, preparing a BiVO4 precursor solution and a ZnO precursor solution, then soaking a substrate into the BiVO4 precursor solution to prepare an amorphous BiVO4 film with a certain thickness by utilizing a reverse layer-layer self assembly technology utilizing a hydroxyl layer electrostatic adsorption effect, irradiating the amorphous BiVO4 film by UV rays to form a hydroxyl layer, then soaking the substrate into the amorphous BiVO4 film to carry out secondary reverse layer-layer self assembly to form a BiVO4-ZnO amorphous film, and finally carry out crystallization at a constant temperature of 500 DEG C to obtain the zinc oxide / bismuth vanadate heterojunction film. The process is simple and controllable, the requirements on experiment conditions are low, and the prepared zinc oxide / bismuth vanadate heterojunction film has a wide application prospect in the photocatalysis field.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a layer-by-layer self-assembly technology of molecular recognition and adsorption to prepare ZnO / BiVO with sensitive visible light response characteristics 4 Thin films and their methods of preparation and applications. Background technique [0002] With the development of society, the treatment of organic pollutants that endanger biological health is a major problem of concern to the world. Among them, the heterogeneous catalytic advanced oxidation technology developed according to the photocatalytic mechanism is a promising pollution control technology. Photocatalytic oxidation technology can effectively destroy many structurally stable refractory pollutants, and has the advantages of high degradation efficiency and complete pollutant degradation, which has attracted widespread attention. Photocatalytic oxidation technology has achieved good results in the degradation of o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/22C02F1/30B01D53/00C02F101/30
CPCB01D53/007C02F1/30B01J23/002B01J23/22C02F2101/30B01D2257/70B01J2523/00B01J35/39B01J35/59B01J2523/27B01J2523/54B01J2523/55
Inventor 谈国强张昕蕾许驰任慧君夏傲邵丹
Owner SHAANXI UNIV OF SCI & TECH
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