The invention discloses a Br / O double-vacancy double-
bismuth-based
crystal form-amorphous junction as well as a synthesis method and application thereof, and belongs to the technical field of catalysts. The synthesis method comprises the following steps: taking
manganese-doped
bismuth oxybromide as a matrix, and forming Mn < 4 + > in a
hydrothermal reaction through
doping of
manganese ions to promote the formation of
bromine vacancies in the
bismuth oxybromide, so as to obtain the
manganese-doped
bismuth oxybromide; amorphous bismuth
tungstate partially covers the surface of a substrate of manganese-doped
bismuth oxybromide in a non-continuous manner, and
oxygen vacancies are formed in the amorphous bismuth
tungstate through
hydrothermal reaction. The special energy band structure of the catalyst can generate photo-induced electrons required for reducing Cr < 6 + > ions, and
bromine vacancies are formed after
manganese doping; the amorphous bismuth
tungstate not only serves as an
electron generation and transfer center, but also forms a
heterojunction through an interface
coupling effect; the optimization promotes the formation of Br / O double vacancies in the
heterojunction, effectively inhibits the recombination of
photon-generated carriers, and finally enables the photoreduction rate of the
system to 100 mg.L <-1 > Cr < 6 + > ions under visible light to reach 8.5 times of that of a manganese-doped
bismuth oxybromide material, thereby realizing the Br / O double-vacancy double-bismuth-based
crystal form-amorphous junction, the synthetic method and the photoreduction effect of high-concentration Cr < 6 + > ions.