Preparation method for large-size ultrathin bismuth selenide nanosheet

A technology of bismuth selenide and nanosheets, which is applied in nanotechnology, nanotechnology, binary selenium/tellurium compounds, etc., can solve the problems of small size, poor uniformity, and large thickness of nanosheets, and achieves good crystallinity and low cost. , the effect of simple process

Inactive Publication Date: 2014-03-19
SOUTHEAST UNIV
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AI Technical Summary

Problems solved by technology

However, the nanosheets prepared by these methods are generally small in size and large in thickness,

Method used

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Examples

Experimental program
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Effect test

preparation example Construction

[0022] A large size ultra-thin Bi 2 Se 3 The preparation method of the nanosheets is prepared by a gas phase transport method, comprising the following steps:

[0023] Step 1. Weigh a certain amount of bismuth powder and selenium powder according to the molar ratio of 2:3, and clean the Si / SiO 2 Substrate, quartz tube, and adhere the substrate to the quartz block with high temperature resistant glue;

[0024] Step 2, put the bismuth powder and selenium powder obtained in step 1 at one end of the quartz tube, and put the Si / SiO obtained in step 1 vertically at the other end 2 Substrate, the quartz tube is evacuated and sealed;

[0025] Step 3, put the quartz tube obtained in step 2 into a high-vacuum tube furnace, heat it at a set temperature for a certain period of time according to a certain heating rate, and then cool it with the furnace;

[0026] Step 4, take out the quartz tube obtained in step 3, and cut it with a diamond cutter to obtain a large-sized ultra-thin Bi t...

Embodiment 1

[0029] Step 1. Weigh 0.2mmol (0.0418g) of bismuth powder and 0.3mmol (0.0237g) of selenium powder. Ultrasonic cleaning of quartz tube, Si / SiO 2 Substrate for 5 minutes, and adhere the substrate to the quartz block with high temperature resistant glue;

[0030] Step 2. Put bismuth powder and selenium powder at one end of the quartz tube, and vertically put Si / SiO at the other end 2 For the substrate, use a molecular pump to evacuate the quartz tube, and immediately seal it with an acetylene flame;

[0031] Step 3. Put the sealed quartz tube into a high-vacuum tube furnace, set the temperature at the raw material end to 700°C, set the temperature at the substrate end to 350°C, heat at a rate of 10-15°C / min, keep it warm for 24 hours, and cool with the furnace;

[0032] Step 4. Take out the fired quartz tube and cut it with a diamond cutter to obtain a large-sized ultra-thin Bi tube. 2 Se 3 Nanosheet Si / SiO 2 substrate.

[0033] The diffraction peak and Bi of the X-ray diff...

Embodiment 2

[0037] The difference between this embodiment and embodiment 1 is that in step 3, the temperature at the raw material end is 600° C., and the temperature at the substrate end is set at 350° C., and the others are the same as in embodiment 1.

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Abstract

The invention discloses a preparation method-vapor phase transmission method for a large-size ultrathin bismuth selenide (Bi2Se3) nanosheet. The preparation process includes the following steps: 1) according to a molar ratio of 2:3, weighing a certain amount of a bismuth powder and a selenium powder, cleaning a Si/SiO2 substrate and a quartz tube, and adhering the substrate on a quartz block with a high temperature resistant glue; 2) putting the raw materials of the bismuth powder and the selenium powder into one end of the quartz tube, vertically putting the other end of the quartz tube into the Si/SiO2 substrate, vacuumizing the quartz tube, and sealing; 3) putting the quartz tube into a high-vacuum tube furnace, according to a certain heating rate, carrying out heat preservation for a certain time at a set temperature, and then cooling along with the furnace; and 4) taking out and cutting apart the quartz tube, and thus obtaining the Si/SiO2 substrate grown with the Bi2Se3 nanosheet. The method adopts the high-purity bismuth powder and the high-purity selenium powder as the raw materials, and synthesis is carried out under the high temperature and high vacuum conditions, and thus the obtained Bi2Se3 nanosheet has good crystallinity and high purity, and has wide application prospects in the fields of optoelectronic devices, thermoelectric condensing units and the like.

Description

technical field [0001] The present invention relates to Bi 2 Se 3 The preparation method is a large-scale ultra-thin bismuth selenide Bi 2 Se 3 Nanosheet preparation method. Background technique [0002] Bi 2 Se 3 It has a bismuthite structure and belongs to the hexagonal crystal system. It is a new type of topological insulator material with surface conduction and internal insulation. It has excellent photoelectric performance, thermoelectric performance and rectification effect, and is widely used in optoelectronic devices and thermoelectric condensation devices. Bi 2 Se 3 It has a layered structure like graphene, and it is composed of structural units called quintuples. Each quintuple structural unit contains 5 atoms and is connected by covalent bonds. The arrangement is as follows: Se-Bi-Se-Bi -Se and quintuple are connected by van der Waals force, so they are easily dissociated along the interlayer to form a sheet structure. Theoretical calculations and experim...

Claims

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Application Information

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IPC IPC(8): C01B19/04B82Y40/00B82Y30/00
Inventor 王增梅李小帅朱鸣芳
Owner SOUTHEAST UNIV
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