Method for preparing bismuth selenide micron-tablet

A technology of micron flakes and bismuth selenide, applied in the direction of binary selenium/telluride compound, metal selenide/telluride, etc.

Inactive Publication Date: 2015-04-22
CHANGCHUN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there is no combination of electrospinning technology and selenization technology to prepare Bi 2 Se 3 Related reports about microsheets

Method used

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  • Method for preparing bismuth selenide micron-tablet
  • Method for preparing bismuth selenide micron-tablet
  • Method for preparing bismuth selenide micron-tablet

Examples

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Embodiment

[0028] Example: 4.9110g Bi (NO 3 ) 3 ·5H 2 O was dissolved in 13.6g DMF, and 2.4g PVP was added after magnetic stirring to dissolve it. After stirring for 12h, a uniformly dispersed spinning solution was obtained; the spinning solution was injected into a 10mL syringe with a 1mL plastic spray gun, and an aluminum wire was inserted. As the anode, use the wire mesh receiving device as the cathode, adjust the angle between the nozzle and the horizontal plane to be 30°, the distance between the nozzle and the wire mesh to be 18cm, the spinning voltage to be 13kV, the ambient temperature to be 20-25°C, and the relative humidity to be 20%-30 %, get PVP / Bi (NO 3 ) 3 composite nanofibers; the PVP / Bi (NO 3 ) 3 The composite nanofibers were placed in a porcelain crucible, placed in a temperature-programmed furnace, heated to 450°C at 1°C / min, held for 3 hours, then cooled to 200°C at a rate of 1°C / min, and then cooled to room temperature naturally with the furnace body , get Bi 2...

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Abstract

The invention relates to a method for preparing a bismuth selenide micron-tablet, and belongs to the technical field of inorganic material preparation. The method comprises the following four steps: (1) preparing a spinning solution; (2) preparing a PVP/Bi(NO3)3 composite nano-fiber; (3) preparing a Bi2O3 nano-fiber, namely heating the PVP/Bi(NO3)3 composite nano-fiber; and (4) preparing a Bi2Se3 micron-tablet, namely selenizing the PVP/Bi(NO3)3 composite nano-fiber with selenium powder. The bismuth selenide micron-tablet has an excellent crystal form, belongs to the cubic system, and has a diameter of 4.46+/-0.16mu m and a thickness of 1.57+/-0.02mu m. The Bi2Se3 micron-tablet can be applied to the fields of thermoelectric materials, three-dimensional topping insulating materials, photo-catalysis and the like. The preparation method is simple and feasible, can be used for massive production, and has a wide application prospect.

Description

technical field [0001] The invention relates to the technical field of inorganic material preparation, in particular to a preparation method of a bismuth selenide microchip. Background technique [0002] Bismuth Selenide 2 Se 3 As a traditional thermoelectric material, it has always been a research hotspot in the field of thermoelectricity due to its excellent thermoelectric properties at room temperature. Research in recent years has shown that Bi 2 Se 3 It is also a new type of three-dimensional topological insulator material, which has the characteristics of surface conduction and internal insulation, which makes it have potential application prospects in the next generation of spin devices, optical devices, photosensitive devices and low-energy electronic devices. Currently, Bi 2 Se 3 There are many preparation methods of micro or nano materials, mainly including solvothermal method, hydrothermal method, low temperature wet chemical method, microwave-assisted wet c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04
CPCC01B19/007C01P2002/20C01P2002/72C01P2002/74C01P2004/03C01P2004/20
Inventor 董相廷苏卉于文生王进贤于辉王婷婷杨铭刘桂霞
Owner CHANGCHUN UNIV OF SCI & TECH
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