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Use of thermoelectric materials for low temperature thermoelectric purposes

a thermoelectric and thermoelectric technology, applied in the field of thermoelectric materials, can solve the problems of no commercial device based on the nernst effect, no excellent thermoelectric properties of these compounds, and low zt/sub>n/sub>values for commercial applications

Inactive Publication Date: 2010-06-10
AARHUS UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0058]FIG. 18 shows graphs representing the electrical resistivity (ρ) along the c-axis (upper left inset), the Nernst effect (N) with ΔV measured perpendicular to ρ in a 9 T magnetic field and ΔT measured parallel to ρ (upper right inset), the power factor (PFN=N2·ρ−1), assuming that ρ is isotropic (lower left inset), and lattice thermal conductivity (κL) (lower right inset) as a function of temperature (T) for two FeSb2 samples. Inset in upper right panel is N(T)

Problems solved by technology

However, so far none of these compounds have shown excellent thermoelectric properties (Mahan, G. D. in Solid State Physics, Vol. 51, p.
In the literature the Nernst (and Ettingshausen) effect are not explored as thoroughly as the Seebeck (and Peltier effect) and no commercial devices based on the Nernst effect are available.
However, the ZTN values are too low for any commercial applications.
However, until now no efficient thermoelectric materials are known which are suitable for applications at a temperature of 150 K or less.

Method used

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  • Use of thermoelectric materials for low temperature thermoelectric purposes
  • Use of thermoelectric materials for low temperature thermoelectric purposes
  • Use of thermoelectric materials for low temperature thermoelectric purposes

Examples

Experimental program
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example 1-12

Preparation of the Thermoelectric Materials

example 1

Preparation of the Prior Art Composition FeSb2 (in Sb Flux)

[0173]Pure FeSb2 samples are prepared by a flux method. 0.95882 g bulk Fe (Alfa Aesar Puratronic® 99.995% metals basis) and 24.04118 g bulk Sb (Alfa Aesar Puratronic® 99.9999% metals basis) are mixed in an alumina crucible which is sealed inside an evacuated quartz ampoule. The ampoule is isolated with mineral wool and heated fast (over approximately 6 hours) to 1050° C. and left there for 2 hours, followed by cooling to 775° C. over 14 hours and finally cooling to 640° C. over 15 days. The Sb-flux is removed by centrifuging at 690° C. on top of small broken quartz pieces inside an evacuated quartz ampoule. To remove any remaining Sb-flux on the FeSb2 samples they are cleaned in an ultra sonic bath of Aqua Regia for 3-8 minutes. Relatively large single crystals are obtained. The resulting samples can be seen in FIG. 1-3.

example 2

Preparation of the Prior Art Composition FeSb2 (in Bi Flux)

[0174]The samples are prepared by a flux method using a melt with nominal stoichiometry Fe8Sb16.1Bi75.9. 0.61137 g bulk Fe (Alfa Aesar Puratronic® 99.995% metals basis) and 2.68264 g bulk Sb (Alfa Aesar Puratronic® 99.9999% metals basis) and 21.70598 g bulk Bi (Strem chemicals 99.999+% metals basis) are mixed in an alumina crucible which is sealed inside an evacuated quartz ampoule. The ampoule is isolated with mineral wool and heated fast (over approximately 6 hours) to 1050° C. and left there for 2 hours, followed by cooling to 775° C. over 14 hours and finally cooling to 640° C. over 15 days. The flux is removed by centrifuging at 690° C. on top of small broken quartz pieces inside an evacuated quartz ampoule.

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Abstract

The invention relates to the use of a thermoelectric material for thermoelectric purposes at a temperature of 150 K or less, said thermoelectric material is a material corresponding to the stoichiometric formula FeSb2, wherein all or part of the Fe atoms optionally being substituted by one or more elements selected from the group comprising: Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La, Hf, Ta, W, Re, Os, Tr, Pt, Au, Hg, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and a vacancy; and wherein all or part of the Sb atoms optionally being substituted by one or more elements selected from the group comprising: P, As, Bi, S, Se, Te, B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb and a vacancy; with the proviso that neither one of the elements Fe and Sb in the formula FeSb2 is fully substituted with a vacancy, characterised in that said thermoelectric material exhibits a power factor (S2σ) of 25 μW / cmK2 or more at a temperature of 150 K or less. The invention also relates to thermoelectric materials per se falling within the above definition.

Description

FIELD OF THE INVENTION[0001]Moreover, the present invention relates to a thermoelectric material having a stoichiometry corresponding to the stoichiometric formula FeSb2, wherein all or part of the Fe atoms optionally being substituted by one or more elements selected from the group comprising: Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and a vacancy; and wherein all or part of the Sb atoms optionally being substituted by one or more elements selected from the group comprising: P, As, Bi, S, Se, Te, B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb and a vacancy; with the proviso that neither one of the elements Fe and Sb in the formula FeSb2 is fully substituted with a vacancy; characterised in that said thermoelectric material exhibits a power factor (S2σ) of 25 pW / cmK2 or more at a temperature of 150 K or less.[0002]Furthermore the present invention relates to a process...

Claims

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Application Information

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IPC IPC(8): H01L35/20C01B19/00C22C12/00H01L35/34
CPCC22C12/00C30B15/00H01L35/34H01L35/18C30B29/52H10N10/853H10N10/01
Inventor BENTIEN, ANDERSJOHNSEN, SIMONMADSEN, GEORG KENT HELLERUPIVERSEN, BO BRUMMERSTEDTSTEGLICH, FRANK
Owner AARHUS UNIV
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